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    ST 54003 Search Results

    ST 54003 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    67954-003LF Amphenol Communications Solutions PV® Wire-to-Board Connector System, Wire to Board, 2.54mm (0.1inch) Centerline Crimp-to-Wire PV Receptacle Housing, Single Row, Polarized. Visit Amphenol Communications Solutions
    10106265-4003A01LF Amphenol Communications Solutions PwrBlade+®,Power Connectors, Right Angle, Receptacle, 2ACP 12S 2ACP Visit Amphenol Communications Solutions
    69254-003LF Amphenol Communications Solutions Modular Jack, Input Output Connectors, Cat 3, Vertical, Through Mount, Unshielded Diamond Peg, 6 Positions, 1 Port Visit Amphenol Communications Solutions

    ST 54003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DB-54003L-470

    Abstract: JESD97 PD54003L-E PD54003L
    Text: DB-54003L-470 RF POWER amplifier using 1 x PD54003L-E N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.5V ■ Output power: 5W ■ Efficiency: 57% - 61% ■ Load mismatch: 20:1


    Original     		PDF DB-54003L-470 PD54003L-E 470MHz DB-54003L-470 JESD97 PD54003L-E PD54003L

    PD54003L

    Abstract: PD5400
    Text: DB-54003L-930 RF POWER amplifier using 1 x PD54003L N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 860 - 930 MHz ■ Supply voltage: 5V ■ Output power: 1.5W ■ Efficiency: 51% - 55% ■ Load mismatch: 20:1


    Original     		PDF DB-54003L-930 PD54003L DB-54003L-930 PD5400

    PD54003L

    Abstract: No abstract text available
    Text: DB-54003L-512 RF POWER amplifier using 1 x PD54003L N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5V ■ Output power: 5W ■ Efficiency: 54% - 63% ■ Load mismatch: 20:1


    Original     		PDF DB-54003L-512 PD54003L DB-54003L-512

    PD54003L

    Abstract: No abstract text available
    Text: DB-54003L-175A RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 155 - 175MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 65% - 69%


    Original     		PDF DB-54003L-175A PD54003L 175MHz DB-54003L-175A DB-54003-470 PD54003

    DB-54003L-930

    Abstract: JESD97 PD54003L
    Text: DB-54003L-930 RF POWER amplifier using 1 x PD54003L N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 860 - 930 MHz ■ Supply voltage: 5V ■ Output power: 1.5W ■ Efficiency: 51% - 55% ■ Load mismatch: 20:1


    Original     		PDF DB-54003L-930 PD54003L DB-54003L-930 JESD97 PD54003L

    PD5400

    Abstract: No abstract text available
    Text: DB-54003L-175A RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 155 - 175MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 67% - 75%


    Original     		PDF DB-54003L-175A PD54003L 175MHz DB-54003L-175A PD5400

    DB-54003L-512

    Abstract: JESD97 PD54003L
    Text: DB-54003L-512 RF POWER amplifier using 1 x PD54003L N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5V ■ Output power: 5W ■ Efficiency: 54% - 63% ■ Load mismatch: 20:1


    Original     		PDF DB-54003L-512 PD54003L DB-54003L-512 JESD97 PD54003L

    EEVHB1V100P

    Abstract: BZX284C5V1 DB-54003L-175A EXCELDRC35C GRM42-6C0G102J50 PD54003L
    Text: DB-54003L-175A RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 155 - 175MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 65% - 69%


    Original     		PDF DB-54003L-175A PD54003L 175MHz DB-54003L-175A EEVHB1V100P BZX284C5V1 EXCELDRC35C GRM42-6C0G102J50 PD54003L

    Untitled

    Abstract: No abstract text available
    Text: DB-54003-470 RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.5V ■ Output power: 3W ■ Efficiency: 50% - 53% ■ Load mismatch: 20:1


    Original     		PDF DB-54003-470 PD54003 470MHz DB-54003-470

    BZX284C5V1

    Abstract: DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L
    Text: DB-54003L-175A RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 155 - 175 MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 65% - 69%


    Original     		PDF DB-54003L-175A PD54003L DB-54003L-175A BZX284C5V1 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L

    smd c8f

    Abstract: GRM1885C1H3R9CZ01 PD54003L murata REEL label RF amplifer smd c2f AB-54003L-512 GRM1885C1H2R2CZ01 GRM1885C1H3R3CZ01 PD54003L-E
    Text: AB-54003L-512 2 stages RF power amp: PD84001 + PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.2V ■ Output power: 4W ■ Current < 1.6A ■ Input power < 10dBm


    Original     		PDF AB-54003L-512 PD84001 PD54003L-E 10dBm -70dBc AB-54003L-512 STEVAL-TDR001V1 AB-54003L-51and smd c8f GRM1885C1H3R9CZ01 PD54003L murata REEL label RF amplifer smd c2f GRM1885C1H2R2CZ01 GRM1885C1H3R3CZ01 PD54003L-E

    diode 1-35 j2

    Abstract: DB-54003L-175 DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L
    Text: DB-54003L-175 RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.5V ■ Output power: > 5W ■ Efficiency: 64% - 73% ■ Load mismatch: 20:1


    Original     		PDF DB-54003L-175 PD54003L DB-54003L-175 diode 1-35 j2 DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L

    capacitor 330pF ATC

    Abstract: rf power amplifier circuit by 400-470mhz 3214W-1-103E A03TJ B09TJ BZX284C5V1 DB-54003-470 EXCELDRC35C PD54003 355nH
    Text: DB-54003-470 RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.5V ■ Output power: 3W ■ Efficiency: 50% - 53% ■ Load mismatch: 20:1


    Original     		PDF DB-54003-470 PD54003 470MHz DB-54003-470 capacitor 330pF ATC rf power amplifier circuit by 400-470mhz 3214W-1-103E A03TJ B09TJ BZX284C5V1 EXCELDRC35C PD54003 355nH

    j655

    Abstract: 151j CAPACITOR grm42-6 cog 101 DB-54003L-235 EEVHB1V100P EXCELDRC35C GRM42-6 PD54003L 102J 100B390JW
    Text: DB-54003L-235 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 215 - 235MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Power gain: 13 ± 0.5dB ■


    Original     		PDF DB-54003L-235 PD54003L 235MHz DB-54003L-235 j655 151j CAPACITOR grm42-6 cog 101 EEVHB1V100P EXCELDRC35C GRM42-6 PD54003L 102J 100B390JW

    PD54003L

    Abstract: DB-54003L-175 DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 resistor 1K 5w GRM42-6C0G121J50 diode smd 1-35 j2
    Text: DB-54003L-175 RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs General feature • Excellent Thermal Stability ■ Frequency: 135 - 175 MHz ■ Supply Voltage: 7.5V ■ Output Power: > 5W ■ Efficiency: 64% - 73% ■ Load Mismatch: 20:1


    Original     		PDF DB-54003L-175 PD54003L DB-54003L-175 PD54003L DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 resistor 1K 5w GRM42-6C0G121J50 diode smd 1-35 j2

    Diode W316

    Abstract: 102J DB-54003L-512 EXCELDRC35C GRM42-6 PD54003L TL11 W-309 W309 FR460
    Text: DB-54003L-512 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5 V ■ Output power: 5 W ■ Efficiency: 54 % - 63 % ■ Load mismatch: 20:1


    Original     		PDF DB-54003L-512 PD54003L DB-54003L-512 Diode W316 102J EXCELDRC35C GRM42-6 PD54003L TL11 W-309 W309 FR460

    C2f SOT-89

    Abstract: AB-54003L-512 GRM1885C1H2R2CZ01 GRM1885C1H3R3CZ01 PD54003L PD54003L-E PD84001 EP 603
    Text: AB-54003L-512 2 stages RF power amp: PD84001 + PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.2V ■ Output power: 4W ■ Current < 1.6A ■ Input power < 10dBm


    Original     		PDF AB-54003L-512 PD84001 PD54003L-E 10dBm -70dBc AB-54003L-512 STEVAL-TDR001V1 C2f SOT-89 GRM1885C1H2R2CZ01 GRM1885C1H3R3CZ01 PD54003L PD54003L-E PD84001 EP 603

    PD54003L

    Abstract: DB-54003L-235
    Text: DB-54003L-235 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 215 - 235MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Power gain: 13 ± 0.5dB ■


    Original     		PDF DB-54003L-235 PD54003L 235MHz DB-54003L-235

    W316

    Abstract: Diode W316
    Text: DB-54003L-512 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5 V ■ Output power: 5 W ■ Efficiency: 54 % - 63 % ■ Load mismatch: 20:1


    Original     		PDF DB-54003L-512 PD54003L DB-54003L-512 W316 Diode W316

    100B Zener

    Abstract: No abstract text available
    Text: DB-54003L-880 RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE


    Original     		PDF DB-54003L-880 PD54003L DB-54003L-880 PD54003L 100B Zener

    panasonic inductor date code

    Abstract: PD54003L C17AH DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 panasonic capacitor date codes panasonic inductor date code NH
    Text: DB-54003L-175A RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 155 - 175 MHz SUPPLY VOLTAGE


    Original     		PDF DB-54003L-175A PD54003L DB-54003L-175A panasonic inductor date code PD54003L C17AH EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 panasonic capacitor date codes panasonic inductor date code NH

    3214W-1-103E

    Abstract: DB-54003L-880 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L gP DIODE zener diode 5.1 v panasonic capacitor date codes
    Text: DB-54003L-880 RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE


    Original     		PDF DB-54003L-880 PD54003L DB-54003L-880 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L gP DIODE zener diode 5.1 v panasonic capacitor date codes

    st 54003

    Abstract: TRANSISTOR AO SMD MARKING J-STD-020B PD54003L-E
    Text: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection


    Original     		PDF PD54003L-E 2002/95/EC PD54003L-E st 54003 TRANSISTOR AO SMD MARKING J-STD-020B

    Untitled

    Abstract: No abstract text available
    Text: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection


    Original     		PDF PD54003L-E 2002/95/EC PD54003L-E