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    Toshiba America Electronic Components SSM6P47NU,LF

    MOSFET 2P-CH 20V 4A 6DFN
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    DigiKey SSM6P47NU,LF Cut Tape 2,546 1
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    SSM6P47NU,LF Digi-Reel 2,546 1
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    Toshiba America Electronic Components SSM6P47NU

    MOSFET, UDFN6 - Tape and Reel (Alt: SSM6P47NU,LF)
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    Avnet Americas SSM6P47NU Reel 16 Weeks 3,000
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    Toshiba America Electronic Components SSM6P47NU,LF(T

    (Alt: SSM6P47NU,LF(T)
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    EBV Elektronik SSM6P47NU,LF(T 15 Weeks 3,000
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    SSM6P47NU Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSM6P47NU Toshiba Japanese - Transistors - Mosfets Original PDF
    SSM6P47NU Toshiba Transistors - Mosfets Original PDF
    SSM6P47NU,LF(T Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 20V 4A 2-2Y1A Original PDF
    SSM6P47NU,LF Toshiba SSM6P47NU - MOSFET, UDFN6 Original PDF

    SSM6P47NU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS VI SSM6P47NU Power Management Switch Applications 1.5V drive Low ON-resistance: RDS(on) = 242 mΩ (max) (@VGS = -1.5 V) RDS(on) = 170 mΩ (max) (@VGS = -1.8 V) RDS(on) = 125 mΩ (max) (@VGS = -2.5 V)


    Original     		PDF SSM6P47NU

    SSM6P47NU

    Abstract: No abstract text available
    Text: SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS VI SSM6P47NU High-Speed Switching Applications Power Management Switch Applications Unit: mm 2.0±0.1 B A 2.0±0.1 1.5V drive Low ON-resistance:Ron = 242 mΩ (max) (@VGS = -1.5 V)


    Original     		PDF SSM6P47NU SSM6P47NU

    BFR42

    Abstract: SSM6P47NU
    Text: SSM6P47NU 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅥ SSM6P47NU 高速スイッチング用 パワーマネージメントスイッチ 単位: mm 2.0±0.1 B A 2.0±0.1 1.5 V 駆動です オン抵抗が低い: Ron = 242 mΩ (max) (@VGS = -1.5 V)


    Original     		PDF SSM6P47NU BFR42 SSM6P47NU

    Untitled

    Abstract: No abstract text available
    Text: SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS VI SSM6P47NU Power Management Switch Applications 1.5V drive Low ON-resistance:RDS(on) = 242 m (max) (@VGS = -1.5 V) RDS(on) = 170 m (max) (@VGS = -1.8 V) RDS(on) = 125 m (max) (@VGS = -2.5 V)


    Original     		PDF SSM6P47NU

    Untitled

    Abstract: No abstract text available
    Text: SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS VI SSM6P47NU Power Management Switch Applications 1.5V drive Low ON-resistance:RDS(on) = 242 mΩ (max) (@VGS = -1.5 V) RDS(on) = 170 mΩ (max) (@VGS = -1.8 V) RDS(on) = 125 mΩ (max) (@VGS = -2.5 V)


    Original     		PDF SSM6P47NU

    Untitled

    Abstract: No abstract text available
    Text: SSM6P47NU 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅥ SSM6P47NU 高速スイッチング用 パワーマネージメントスイッチ 単位: mm 2.0±0.1 B A 2.0±0.1 1.5 V 駆動です オン抵抗が低い: Ron = 242 mΩ (max) (@VGS = -1.5 V)


    Original     		PDF SSM6P47NU

    Untitled

    Abstract: No abstract text available
    Text: SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS VI SSM6P47NU Power Management Switch Applications 1.5V drive Low ON-resistance:RDS(on) = 242 mΩ (max) (@VGS = -1.5 V) RDS(on) = 170 mΩ (max) (@VGS = -1.8 V) RDS(on) = 125 mΩ (max) (@VGS = -2.5 V)


    Original     		PDF SSM6P47NU

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original     		PDF AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		PDF BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3

    TPCA8077

    Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
    Text: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082C BCJ0082B TPCA8077 TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A