Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SSM6N24TU Search Results

    SF Impression Pixel

    SSM6N24TU Price and Stock

    Toshiba America Electronic Components SSM6N24TU,LF

    MOSFET 2N-CH 30V 0.5A UF6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSM6N24TU,LF Cut Tape 2,415 1
    • 1 $0.42
    • 10 $0.326
    • 100 $0.1958
    • 1000 $0.12328
    • 10000 $0.12328
    		Buy Now
    SSM6N24TU,LF Digi-Reel 1
    • 1 $0.42
    • 10 $0.326
    • 100 $0.1958
    • 1000 $0.12328
    • 10000 $0.12328
    		Buy Now
    SSM6N24TU,LF Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0979
    		Buy Now
    Mouser Electronics SSM6N24TU,LF 10,455
    • 1 $0.42
    • 10 $0.326
    • 100 $0.182
    • 1000 $0.124
    • 10000 $0.103
    		Buy Now

    Toshiba America Electronic Components SSM6N24TU

    Transistor MOSFET Array Dual N-Channel 30V 0.5A 6-Pin UF - Tape and Reel (Alt: SSM6N24TU,LF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SSM6N24TU Reel 20 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.1295
    		Buy Now

    Toshiba America Electronic Components SSM6N24TU,LF(B

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SSM6N24TU,LF(B 2,327
    • 1 $0.725
    • 10 $0.725
    • 100 $0.725
    • 1000 $0.29
    • 10000 $0.29
    		Buy Now

    SSM6N24TU Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SSM6N24TU Toshiba Dual Silicon N-Channel MOSFET Original PDF
    SSM6N24TU,LF Toshiba America Electronic Components SMALL SIGNAL MOSFET N-CHX2 VDSS3 Original PDF

    SSM6N24TU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SSM6N24TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6N24TU High Speed Switching Applications Unit: mm Low on-resistance: 2.1±0.1 Ron = 145mΩ (max) (@VGS = 4.5 V) 1.7±0.1 Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage


    Original     		PDF SSM6N24TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6N24TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6N24TU High Speed Switching Applications Unit: mm • Low on-resistance: 2.1±0.1 Ron = 145mΩ (max) (@VGS = 4.5 V) 1.7±0.1 Symbol Rating Unit Drain-Source voltage VDS 30


    Original     		PDF SSM6N24TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6N24TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6N24TU High Speed Switching Applications Unit: mm Low on-resistance: 2.1±0.1 Ron = 145mΩ (max) (@VGS = 4.5 V) 1.7±0.1 Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage


    Original     		PDF SSM6N24TU

    SSM6N24TU

    Abstract: No abstract text available
    Text: SSM6N24TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6N24TU High Speed Switching Applications Unit: mm • Low on-resistance: 2.1±0.1 Ron = 145mΩ (max) (@VGS = 4.5 V) 1.7±0.1 Drain-Source voltage Gate-Source voltage DC Drain current


    Original     		PDF SSM6N24TU SSM6N24TU

    SSM6N24TU

    Abstract: No abstract text available
    Text: SSM6N24TU シリコンNチャネルMOS形 U-MOSⅢ 東芝電界効果トランジスタ SSM6N24TU 単位: mm ○ 高速スイッチング 2.1±0.1 • オン抵抗が低い。 1.7±0.1 絶対最大定格 (Ta = 25°C) (Q1,Q2 共通) 目 記 号 定 格 単位


    Original     		PDF SSM6N24TU 645mm2) SSM6N24TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6N24TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6N24TU High Speed Switching Applications Unit: mm Ron = 180m (max) (@VGS = 2.5 V) 2.1±0.1 1.7±0.1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit


    Original     		PDF SSM6N24TU

    SSM6N24TU

    Abstract: No abstract text available
    Text: SSM6N24TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6N24TU High Speed Switching Applications Unit: mm • Low on-resistance: 2.1±0.1 Ron = 145mΩ (max) (@VGS = 4.5 V) 1.7±0.1 Symbol Rating Unit Drain-Source voltage VDS 30


    Original     		PDF SSM6N24TU SSM6N24TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6N24TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6N24TU Switching Applications Small package • Low on resistance: 2.0±0.1 (2in1) 1.7±0.1 Ron = 145mΩ (max) (@VGS = 4.5 V) Symbol Rating Unit Drain-Source voltage VDS 30


    Original     		PDF SSM6N24TU

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    8aa1

    Abstract: esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168
    Text: 小型面実装MOS FET S-MOSシリーズ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAA1 12341D3AG BDJ0099A 8aa1 esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		PDF BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF

    tpc8118 equivalent replacement

    Abstract: SSM3J307T Zener diode smd 071 A01
    Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082A tpc8118 equivalent replacement SSM3J307T Zener diode smd 071 A01

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    TPCA8077

    Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
    Text: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082C BCJ0082B TPCA8077 TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A