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    Toshiba America Electronic Components SSM6K06FU(TE85L,F)

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    Quest Components SSM6K06FU(TE85L,F) 9,335
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    • 10000 $0.3285
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    SSM6K06FU Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSM6K06FU Toshiba Metal oxide N-channel FET, Enhancement Type with diode Original PDF
    SSM6K06FU Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    SSM6K06FU Toshiba Scan PDF

    SSM6K06FU Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SSM6K06FU

    Abstract: No abstract text available
    Text: SSM6K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K06FU High Speed Switching Applications Unit: mm • Small package · Low on resistance : Ron = 160 mΩ max @VGS = 4 V : Ron = 210 mΩ max (@VGS = 2.5 V) · Low gate threshold voltage


    Original     		SSM6K06FU SSM6K06FU PDF

    SSM6K06FU

    Abstract: No abstract text available
    Text: SSM6K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K06FU High Speed Switching Applications Unit: mm • Small package • Low ON- resistance: RDS ON = 160 mΩ max (@VGS = 4 V) : RDS(ON) = 210 mΩ max (@VGS = 2.5 V) • Low gate threshold voltage


    Original     		SSM6K06FU SSM6K06FU PDF

    SSM6K06FU

    Abstract: No abstract text available
    Text: SSM6K06FU 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM6K06FU ○ 高速スイッチング 単位: mm • 小型パッケージで高密度実装に適しています。 • オン抵抗が低い。 : RDS ON = 160 mΩ max (@VGS = 4 V)


    Original     		SSM6K06FU SSM6K06FU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K06FU High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 160 mΩ max @VGS = 4 V : Ron = 210 mΩ max (@VGS = 2.5 V) • Low gate threshold voltage


    Original     		SSM6K06FU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K06FU High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 160 mΩ max @VGS = 4 V : Ron = 210 mΩ max (@VGS = 2.5 V) • Low gate threshold voltage


    Original     		SSM6K06FU PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    SSM3K7002

    Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
    Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,


    Original     		3402C-0209 SSM3K7002 ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 PDF

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028 PDF

    8aa1

    Abstract: esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168
    Text: 小型面実装MOS FET S-MOSシリーズ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		050106DAA1 12341D3AG BDJ0099A 8aa1 esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF

    tpc8118 equivalent replacement

    Abstract: SSM3J307T Zener diode smd 071 A01
    Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		BCE0082A tpc8118 equivalent replacement SSM3J307T Zener diode smd 071 A01 PDF

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3 PDF

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 PDF

    TLP251-2

    Abstract: IGBT 5kV TG2209 TLP151 IGBT 1500V 5A GT15Q101 GT15Q301 TC74VCX US20 1200V-IGBT
    Text: 東芝半導体情報誌アイ 1999 8月号 発行/（株）東芝 セミコンダクター社 電子デバイス営業事業部 営業企画部 TEL. 03-3457-3453 FAX. 03-5444-9431 r eye 1999年8月 ducto n 号 o ic Vo m l.8 Se 6 vol.86 CONTENTS 今月の新製品情報


    Original     		125Mbps 1200VIGBT 163mm 203mm TC74VHC TC74VHCT TC74LCX TC74VCX 125Mbs TLP251-2 IGBT 5kV TG2209 TLP151 IGBT 1500V 5A GT15Q101 GT15Q301 TC74VCX US20 1200V-IGBT PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SSM6K06FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE S S M 6 K 6 F U HIGH SPEED SWITCHING APPLICATIONS • • • Small Package Low on Resistance : Ron = 160 m il Max. @V(JS = 4 V : Ron = 210 m il Max. (@VGS = 2-5 V) Low Gate Threshold Voltage


    OCR Scan     		SSM6K06FU PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SSM6K06FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6K06FU HIGH SPEED SWITCHING APPLICATIONS • Sm all Package • Low on Resistance : Ron = 160 m il Max. @VQg = 4 V : Ron = 210 m i) Max. (@VGS = 2-5 V) • Low Gate Threshold Voltage


    OCR Scan     		SSM6K06FU PDF

    SSM6K06FU

    Abstract: No abstract text available
    Text: TO SH IBA SSM6K06FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6K06FU HIGH SPEED SWITCHING APPLICATIONS U n it in mm 2.1 i 0.1 • Sm all Package • Low on Resistance : Ron = 160 m il M ax. @ V Q g = 4 V : Ron = 210 m i) M ax. (@ V G S = 2-5 V)


    OCR Scan     		SSM6K06FU SSM6K06FU PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE SSM6K06FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE S S M 6 K 6 F U HIGH SPEED SWITCHING APPLICATIONS • • • Unit in mm Small Package Low on Resistance : Ron = 160 m il Max. @VQg = 4 V : Ron = 210 m i) Max. (@VGS = 2-5 V)


    OCR Scan     		SSM6K06FU PDF