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    SSM3K03 Search Results

    SSM3K03 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SSM3K03FE Toshiba Metal oxide N-channel FET, Enhancement Type with diode Original PDF
    SSM3K03FE Toshiba N-Channel MOSFET Original PDF
    SSM3K03FE Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    SSM3K03FE Toshiba Scan PDF
    SSM3K03FV Toshiba Silicon N-Channel MOSFET Original PDF
    SSM3K03TE Toshiba Small-signal MOS FET Original PDF

    SSM3K03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSM3K03TE

    Abstract: No abstract text available
    Text: SSM3K03TE 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K03TE ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm 1.2±0.05 : Vth = 0.7~1.3 V スイッチング速度が速い。 • 小型パッケージで高密度実装に最適。


    Original     		PDF SSM3K03TE 0022g SSM3K03TE

    SSM3K03FE

    Abstract: No abstract text available
    Text: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Unit: mm


    Original     		PDF SSM3K03FE 2003-03-27transportation SSM3K03FE

    2SA1955

    Abstract: HN7G01FE SSM3K03FE
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FE 2SA1955 SSM3K03FE HN7G01FE

    Untitled

    Abstract: No abstract text available
    Text: SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog Switch Applications • Low gate threshold voltage: Vth = 0.7~1.3 V • Optimum for high-density mounting in small packages Unit Drain-source voltage


    Original     		PDF SSM3K03FV

    Untitled

    Abstract: No abstract text available
    Text: SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Characteristics １ ２ ３ 0.59±0.05


    Original     		PDF SSM3K03TE 0022g

    Untitled

    Abstract: No abstract text available
    Text: SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog Switch Applications • Low gate threshold voltage: Vth = 0.7 to 1.3 V • Optimum for high-density mounting in small packages Unit Drain-source voltage


    Original     		PDF SSM3K03FV

    HN7G02FE

    Abstract: RN2110 SSM3K03FE
    Text: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent


    Original     		PDF HN7G02FE RN2110 SSM3K03FE HN7G02FE

    2SA1955

    Abstract: HN7G01FE SSM3K03FE
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FE 2SA1955 SSM3K03FE HN7G01FE

    SSM3K03FV

    Abstract: VESM
    Text: SSM3K03FV 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K03FV ○ 高速スイッチング用 ○ アナログスイッチ用 : Vth = 0.7~1.3 V • スイッチング速度が速い。 • 小型パッケージで高密度実装に最適。


    Original     		PDF SSM3K03FV 0015g SSM3K03FV VESM

    SSM3K03TE

    Abstract: No abstract text available
    Text: SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Characteristics Symbol Rating Unit


    Original     		PDF SSM3K03TE SSM3K03TE

    SSM3K03FE

    Abstract: No abstract text available
    Text: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive · High input impedance · Low gate threshold voltage: Vth = 0.7~1.3 V · Small package Unit: mm


    Original     		PDF SSM3K03FE 2003-03-27transportation SSM3K03FE

    Untitled

    Abstract: No abstract text available
    Text: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Unit: mm


    Original     		PDF SSM3K03FE

    Untitled

    Abstract: No abstract text available
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE

    2SC5376F

    Abstract: HN7G10FE SSM3K03FE 2sC537
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE HN7G10FE 2sC537

    Untitled

    Abstract: No abstract text available
    Text: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent


    Original     		PDF HN7G02FE RN2110 SSM3K03FE

    Untitled

    Abstract: No abstract text available
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE

    SSM3K03TE

    Abstract: No abstract text available
    Text: SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Analog Switch Applications Unit: mm 1.2±0.05 Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Characteristics Symbol Rating Unit


    Original     		PDF SSM3K03TE SSM3K03TE

    SSM3K03FE

    Abstract: No abstract text available
    Text: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Unit: mm


    Original     		PDF SSM3K03FE SSM3K03FE

    Untitled

    Abstract: No abstract text available
    Text: SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog Switch Applications Low gate threshold voltage: Vth = 0.7~1.3 V • Optimum for high-density mounting in small packages 3 Unit Drain-source voltage


    Original     		PDF SSM3K03FV

    Untitled

    Abstract: No abstract text available
    Text: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Unit: mm


    Original     		PDF SSM3K03FE

    SSM3K03FV

    Abstract: No abstract text available
    Text: SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog Switch Applications • Low gate threshold voltage: Vth = 0.7 to 1.3 V • Optimum for high-density mounting in small packages Unit Drain-source voltage


    Original     		PDF SSM3K03FV SSM3K03FV

    Untitled

    Abstract: No abstract text available
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FE 2SA1955 SSM3K03FE

    fet to92

    Abstract: Pch MOS FET SSM3J13T SSM3J16FU ssm3k14t transistor ESM 2SK1830 2SK2035 2SK2825 SSM3J15TE
    Text: Part Number SSM3K03TE SSM3K16TE SSM3K15TE SSM3J16TE SSM3J15TE SSM3K03FE SSM3K04FE 2SK1830 Nch 2SK2825 Nch 2SK2035 Nch SSM3K04FS SSM3K16FS SSM3K15FS 2SJ347 Pch SSM3J16FS SSM3J15FS 2SK1829 Nch 2SK2824 Nch 2SK2034 Nch 2SK2037 Nch SSM3K04FU SSM3K16FU SSM3K05FU


    Original     		PDF SSM3K03TE SSM3K16TE SSM3K15TE SSM3J16TE SSM3J15TE SSM3K03FE SSM3K04FE 2SK1830 2SK2825 2SK2035 fet to92 Pch MOS FET SSM3J13T SSM3J16FU ssm3k14t transistor ESM SSM3J15TE

    SSM3K03FE

    Abstract: No abstract text available
    Text: TOSHIBA SSM3K03FE TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE SSM3K03FE Unit in mm HIGH SPEED SWITCH APPLICATIONS AN ALO G SWITCH APPLICATIONS • • • • 1.6 ± 0.1 2.5 V Gate Drive High Input Impedance Low Gate Threshold Voltage Small Package


    OCR Scan     		PDF SSM3K03FE SSM3K03FE