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    Text: SSM2308GEN N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate drive D Lower on-resistance 2000V ESD capability BV DSS 20V R DS ON 600mΩ 1.2A ID S SOT-23 G Description Power MOSFETs from Silicon Standard use advanced processing techniques to achieve the lowest possible on-resistance, resulting in an extremely efficient and


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    PDF SSM2308GEN OT-23 SSM2308GEN