SSG9435P
Abstract: No abstract text available
Text: SSG9435P -6.5 A, -30 V, RDS ON 49 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to
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SSG9435P
14-Jan-2011
SSG9435P
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9435sc
Abstract: SSG9435
Text: SSG9435 -5.3A, -30V,RDS ON 50mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 The SSG9435 provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.
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SSG9435
SSG9435
27Typ.
01-Jun-2002
9435sc
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SSG9435BDY
Abstract: MosFET 9435BDYSC
Text: SSG9435BDY -5.3 A, -30 V, RDS ON 36 mΩ Ω P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SOP-8 The SSG9435BDY provide the designer with the best combination of fast switching, ruggedized device design,
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SSG9435BDY
SSG9435BDY
9435BDYSC
16-Jun-2011
MosFET
9435BDYSC
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9435P
Abstract: SSG9435P
Text: SSG9435P P-Ch Enhancement Mode Power MOSFET -5.7 A, -30 V, RDS ON 49 m Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to
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SSG9435P
07-Jul-2010
9435P
SSG9435P
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9435sc
Abstract: SSG9435 53a3
Text: SSG9435 P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS ON 55 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG9435 provide the designer with the best combination of fast switching, ruggedized device design, low
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SSG9435
SSG9435
9435SC
width300us,
01-June-2004
9435sc
53a3
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9435a
Abstract: SSG9435A SSG9435
Text: SSG9435A P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS ON 42 m Elektronische Bauelemente DESCRIPTION The SSG9435A uses high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. The SOP-8 package is universally preferred for all commercial-industrial surface mount
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SSG9435A
SSG9435A
9435ASC
22-Oct-2009
9435a
SSG9435
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9435sc
Abstract: SSG9435 10-Aug2010 9435 53a3
Text: SSG9435 P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS ON 55 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG9435 provide the designer with the best combination of fast switching, ruggedized device design, low
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SSG9435
SSG9435
9435SC
width300us,
10-Aug-2010
9435sc
10-Aug2010
9435
53a3
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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secos gmbh
Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3
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SC-59
SGSR809-A
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
SMBJ11CA
SM4005A
SMBJ130CA
SMBJ14CA
SMBJ16CA
SMBJ160CA
BZV55C6V2
BZV55C12
SMBJ13CA
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