SSG4890N
Abstract: MosFET
Text: SSG4890N 1.4 A, 150 V, RDS ON 700 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to
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SSG4890N
24-Aug-2012
SSG4890N
MosFET
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SSG4835P
Abstract: No abstract text available
Text: SSG4835P -9.5 A, -30 V, RDS ON 19 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on)
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SSG4835P
31-Dec-2010
SSG4835P
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SSG4841P
Abstract: MosFET
Text: SSG4841P -9.0 A, -40 V, RDS ON 35 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to
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SSG4841P
31-Dec-2010
SSG4841P
MosFET
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Untitled
Abstract: No abstract text available
Text: SSG4835P P-Ch Enhancement Mode Power MOSFET -9.5 A, -30 V, RDS ON 19 m Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on)
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SSG4835P
09-Aug-2010
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ssg4874n
Abstract: MosFET
Text: SSG4874N 16.8 A, 30 V, RDS ON 9 m N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to
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SSG4874N
31-Dec-2010
ssg4874n
MosFET
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Untitled
Abstract: No abstract text available
Text: SSG4890N 1.9 A, 150 V, RDS ON 700 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to
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SSG4890N
10-Jan-2011
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Untitled
Abstract: No abstract text available
Text: SSG4800 N-ch Enhancement Mode Power MOSFET 9.4 A, 30 V, RDS ON 17 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS & FEATURES z z z z z The SSG4800 provides the designer with the best combination of fast switching, ruggedized
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SSG4800
SSG4800
07936g
01-April-2009
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SSG4825PE
Abstract: MosFET
Text: SSG4825PE -11.5 A, 30 V, RDS ON 13 m P-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to
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SSG4825PE
31-Dec-2010
SSG4825PE
MosFET
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ssg4825p
Abstract: MosFET J 115 mosfet
Text: SSG4825P -11.5 A, 30 V, RDS ON 13 m P-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to
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SSG4825P
31-Dec-2010
ssg4825p
MosFET
J 115 mosfet
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SSG4801
Abstract: MosFET 4801ss
Text: SSG4801 -5 A, -30 V, RDS ON 50 m Dual-P Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and
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SSG4801
SSG4801
4801SS
10sec.
19-Jan-2011
MosFET
4801ss
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Untitled
Abstract: No abstract text available
Text: SSG4841P P-Ch Enhancement Mode Power MOSFET -9.0 A, -40 V, RDS ON 35 m Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to
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SSG4841P
06-May-2010
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SSG4842N
Abstract: MosFET
Text: SSG4842N 23A , 40V , RDS ON 9 mΩ Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide
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SSG4842N
13-Dec-2011
SSG4842N
MosFET
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4841p
Abstract: td 4841p SSG48
Text: SSG4841P P-Ch Enhancement Mode Power MOSFET -9.0 A, -40 V, RDS ON 35 m Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical
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SSG4841P
06-May-2010
4841p
td 4841p
SSG48
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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