MX 0541
Abstract: phone 14 pin vga camera pinout mx 0541 b nintendo nintendo ds 5 pin vga camera pinout suyin SAMSUNG NAND FLASH TRANSLATION LAYER FTL SAMSUNG NAND FLASH TRANSLATION LAYER Sram PANASONIC Memory card 32kbyte SAMSUNG NAND FTL
Text: SmartMediaTM Application Memory Product & Technology Division 2000.3.15 Product Planning & Application Engineering The Leader in Memory Technology ELECTRONICS TM-SSFDC SmartMedia SmartMediaTM -SSFDC Pin Pin Configuration Configuration Consistent Pin-out for all densities : 2MB ~ 128MB
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128MB
16MB-3
17Pin
SMA01U
HPC-SV03
SMA02U
SMA03U
CBS51U
MX 0541
phone 14 pin vga camera pinout
mx 0541 b
nintendo
nintendo ds
5 pin vga camera pinout suyin
SAMSUNG NAND FLASH TRANSLATION LAYER FTL
SAMSUNG NAND FLASH TRANSLATION LAYER
Sram PANASONIC Memory card 32kbyte
SAMSUNG NAND FTL
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TA 8825 AN toshiba
Abstract: AG05 SMD smd H04 4b LCD hc 1613 W01 fet smd code W06 D2716 csc 8816 matching accelerator toshiba
Text: TENTATIVE TC6358TB TOSHIBA COMPANION CHIP FOR TX3922 TC6358TB PLUM2 USER’S MANUAL Rev. 4.2 Sep. 4, 2000 TC6358TB Sep. 4, 2000 The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our
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TC6358TB
TX3922
TC6358TB
TBGA552-3131-1
TA 8825 AN toshiba
AG05 SMD
smd H04 4b
LCD hc 1613
W01 fet
smd code W06
D2716
csc 8816
matching accelerator toshiba
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SSFDC
Abstract: SMFV016A
Text: Advanced Information SmartMediaTM SMFV016A Document Title 16M x 8 Bit SmartMediaTM Card Revision History Revision No 0.0 History Draft Date Remark Initial issue. April 10th 1999 Advanced Information The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
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SMFV016A
SSFDC
SMFV016A
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Transcend
Abstract: Transcend diagram TS128MVSSFDC digital VOICE RECORDER SmartMedia ssfdc
Text: TS128MVSSFDC 128M SmartMedia Features Single 2.7V~3.6V supply Organization Memory Cell Array : 128M + 4096K bitx8bit Data Register : (512 + 16)bit x8bit Automatic Program and Erase Page Program : (512 + 16)Byte Block Erase : (16K + 512)Byte 528-Byte Page Read Operation
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TS128MVSSFDC
4096K
528-Byte
200us
TS128MVSSFDC
TS128MVSSFDC-Block
Transcend
Transcend diagram
digital VOICE RECORDER
SmartMedia
ssfdc
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TC58NS128ADC
Abstract: SmartMediaTM Physical Format Specifications SmartMedia Logical Format ID maker code
Text: TC58NS128ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 128-MBIT 16M ´ 8 BITS CMOS NAND E PROM (16M BYTE SmartMedia ) DESCRIPTION The TC58NS128A is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable
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TC58NS128ADC
128-MBIT
TC58NS128A
528-byte
528-byte
TC58NS128ADC
SmartMediaTM Physical Format Specifications
SmartMedia Logical Format ID maker code
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TC58NS256ADC
Abstract: No abstract text available
Text: TC58NS256ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 256-MBIT 32M ´ 8 BITS CMOS NAND E PROM (32M BYTE SmartMedia ) DESCRIPTION The TC58NS256A is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable
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TC58NS256ADC
256-MBIT
TC58NS256A
528-byte
528-byte
TC58NS256ADC
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TC58NS128ADC
Abstract: No abstract text available
Text: TC58NS128ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 128-MBIT 16M x 8 BITS CMOS NAND E PROM (16M BYTE SmartMedia ) DESCRIPTION The TC58NS128A is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable
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TC58NS128ADC
128-MBIT
TC58NS128A
528-byte
528-byte
TC58NS128ADC
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69-206
Abstract: TC58V64ADC
Text: TC58V64ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 64-MBIT 8M x 8 BITS CMOS NAND E PROM (8M BYTE SmartMedia TM ) DESCRIPTION The TC58V64A is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable
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TC58V64ADC
64-MBIT
TC58V64A
528-byte
528-byte
FDC-22A
69-206
TC58V64ADC
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ssfdc
Abstract: 64MB 3.3V SmartMedia card TS64MVSSFDC 64mb nand flash
Text: TS64MVSSFDC 64MB SmartMediaCard Features Description !" Single 2.7V~3.6V supply !" Organization Memory Cell Array : 64M + 2048K bitx8bit Data Register : (512 + 16)bit x8bit !" Automatic Program and Erase Page Program : (512 + 16)Byte Block Erase : (16K + 512)Byte
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TS64MVSSFDC
2048K
528-Byte
200us
ssfdc
64MB 3.3V SmartMedia card
TS64MVSSFDC
64mb nand flash
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Untitled
Abstract: No abstract text available
Text: TC58V64BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 64-MBIT 8M x 8 BITS CMOS NAND E PROM (8M BYTE SmartMedia ) DESCRIPTION The TC58V64B is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable
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TC58V64BDC
64-MBIT
TC58V64B
528-byte
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Untitled
Abstract: No abstract text available
Text: TC58NS256BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 256-MBIT 32M x 8 BITS CMOS NAND E PROM (32M BYTE SmartMedia ) DESCRIPTION The TC58NS256B is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable
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TC58NS256BDC
256-MBIT
TC58NS256B
528-byte
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TC58NS256BDC
Abstract: ssfdc
Text: TC58NS256BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 256-MBIT 32M u 8 BITS CMOS NAND E PROM (32M BYTE SmartMedia ) DESCRIPTION The TC58NS256B is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable
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TC58NS256BDC
256-MBIT
TC58NS256B
528-byte
528-byte
TC58NS256BDC
ssfdc
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SmartMediaTM Physical Format Specifications
Abstract: ssfdc ETC 527 TC58NS128BDC TC58NS256BDC
Text: TC58NS128BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 128-MBIT 16M u 8 BITS CMOS NAND E PROM (16M BYTE SmartMedia ) DESCRIPTION The TC58NS128B is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable
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TC58NS128BDC
128-MBIT
TC58NS128B
528-byte
528-byte
SmartMediaTM Physical Format Specifications
ssfdc
ETC 527
TC58NS128BDC
TC58NS256BDC
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TH58NS512DC
Abstract: No abstract text available
Text: TH58NS512DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64M x 8 BITS CMOS NAND E PROM (64M BYTE SmartMedia TM ) DESCRIPTION The TH58NS512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable
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TH58NS512DC
512-MBIT
TH58NS512
528-byte
528-byte
FDC-22C
TH58NS512DC
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SmartMedia Logical Format
Abstract: TH58V128DC
Text: TOSHIBA TENTATIVE TH58V128DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 Mbit 16 M x 8 bit CMOS NAND E2PROM (16M BYTE Sm artM edia ) DESCRIPTION The TH58V128DC device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and
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TH58V128DC
TH58V128DC
32MByte
FDC-22C
SmartMedia Logical Format
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SmartMedia Logical Format
Abstract: TC58V64DC
Text: TOSHIBA TC58V64DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 Mbit 8 M x 8 bit CMOS NAND E2PROM (8M BYTE Sm artM edia ) DESCRIPTION The TC58V64DC device is a single 3.3 volt 64 M (69,206,016) bit NAND Electrically Erasable and
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TC58V64DC
TC58V64DC
32MByte
FDC-22A
SmartMedia Logical Format
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58V32ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 Mbit 4 M x 8 bit CMOS NAND E2PROM (4M BYTE Sm artM edia ) DESCRIPTION The TC58V32ADC device is a single 3.3 volt 32 M (34,603,008) bit NAND Electrically Erasable and
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TC58V32ADC
TC58V32ADC
32MByte
FDC-22A
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ssfdc
Abstract: TC58512DC
Text: TOSHIBA TENTATIVE TH58512DC TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE CM O S 5 1 2-MBIT 32M X 8 BITS CMOS NAND E2PROM (32M BYTE S m artM ed ia ) DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and
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TH58512DC
TH58512
512-Mbit
528-byte
32MByte
FDC-22C
ssfdc
TC58512DC
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JL-03
Abstract: ssfdc tc toshiba nand flash 1996 TC58V64ADC ssfdc LVD SCHEMATIC DIAGRAM
Text: TOSHIBA TC58V64ADC TO SH IB A M O S DIG ITAL INTEGRATED CIRCUIT TENTATIVE 6 4 - MB IT 8 M X SILICON GATE CM O S 8 BITS CMOS N A N D E2PROM (8 M BYTE S m a rtM e d ia ) DESCRIPTION The TC58V64A is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and
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TC58V64ADC
64-MB
TC58V64A
64-Mbit
528-byte
32MByte
FDC-22A
JL-03
ssfdc tc
toshiba nand flash 1996
TC58V64ADC
ssfdc
LVD SCHEMATIC DIAGRAM
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TC58V64DC
Abstract: SmartMedia Logical Format SmartMedia Logical Format ID maker code
Text: TOSHIBA TC58V64DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 Mbit 8 M x 8 bit CMOS NAND E2PROM (8M BYTE Sm artM edia ) DESCRIPTION The TC58V64DC device is a single 3.3 volt 64 M (69,206,016) bit NAND Electrically Erasable and
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TC58V64DC
32MByte
FDC-22A
SmartMedia Logical Format
SmartMedia Logical Format ID maker code
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ssfdc tc
Abstract: TC58V32ADC fDC22A a7611
Text: T O S H IB A TC58V32ADC TENTATIVE 3 2 M b it TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 4 M X 8 b it SILICON GATE CMOS C M O S N A N D E2 P R O M (4 M BYTE S m a r t M e d ia ) DESCRIPTION The TC58V32ADC device is a single 3.3 volt 32 M (34,603,008) bit NAND Electrically Erasable and
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TC58V32ADC
TC58V32ADC
32MByte
FDC-22A
ssfdc tc
fDC22A
a7611
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC5816BDC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 Mbit 2 M x 8 bit CMOS NAND E2PROM (2M BYTE Sm artM edia ) DESCRIPTION The TC5816BDC device is a single 5.0 volt 16 M (17,301,504) bit NAND Electrically Erasable and
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TC5816BDC
TC5816BDC
32MByte
FDC-22
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TC58V16BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 16 M b it 2 M SILICON GATE CMOS x 8 b it CMOS N A N D E2PROM (2M BYTE S m a rtM e d ia ) DESCRIPTION The TC58V16BDC device is a single 3.3 volt 16 M (17,301,504) bit NAND Electrically Erasable and
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TC58V16BDC
TC58V16BDC
32MByte
FDC-22A
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TH58V128DC
Abstract: FDC-22C
Text: TO SH IBA TH58V128DC TENTATIVE TOSHIBA M OS DIGITAL INTEGRATED CIRCUIT 128 M b it 16 M x SILICON GATE CM OS 8 bit C M O S N A N D E2P R O M (1 6 M BYTE S m a r t M e d ia ) DESCRIPTION The TH58V128DC device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and
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TH58V128DC
32MByte
FDC-22C
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