Mosfet
Abstract: SSF4015
Text: SSF4015 40V P-Channel MOSFET Main Product Characteristics VDSS -40V RDS on 11mΩ (typ.) ID －20A D SSF3612D SSF4015 SSF4035 S TO-252 (D-PAK) Marking and Pin Schematic Diagram Assignment Features and Benefits G Advanced trench MOSFET process technology
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SSF4015
SSF3612D
SSF4035
O-252
Mosfet
SSF4015
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SSF3612
Abstract: No abstract text available
Text: SSF3612 D DESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =11A RDS(ON) < 17mΩ @ VGS=4.5V
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SSF3612
SSF3612
330mm
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Mosfet
Abstract: SSF3612E
Text: SSF3612E 25V N-Channel MOSFET DESCRIPTION The SSF3612E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional
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SSF3612E
SSF3612E
Mosfet
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Mosfet
Abstract: SSFD3006
Text: SSFD3006 30V N-Channel MOSFET Main Product Characteristics VDSS 30V RDS on 3.8mΩ (typ.) ID 90A SSF3612D SSFD3006 TO-252 (D-PAK) Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSFD3006
SSF3612D
O-252
Mosfet
SSFD3006
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Mosfet
Abstract: SSF3612
Text: SSF3612 30V N-Channel MOSFET D DESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID =11.6A
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SSF3612
SSF3612
330mm
Mosfet
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