SSF3402
Abstract: "battery protection" 3402 transistor
Text: SSF3402 D DESCRIPTION The SSF3402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ VGS=4.5V
|
Original
|
PDF
|
SSF3402
SSF3402
OT-23
OT-23
180mm
25unless
"battery protection"
3402 transistor
|
Mosfet
Abstract: SSF3420 MARKING TR SOT23-6 P MOSFET
Text: SSF3420 30V N-Channel MOSFET D DESCRIPTION The SSF3420 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID =6.3A
|
Original
|
PDF
|
SSF3420
SSF3420
OT23-6
OT23-6
180mm
Mosfet
MARKING TR SOT23-6 P MOSFET
|
TSOP-6
Abstract: SSF3428 DIODE 30V TSOP DIODE 30V TSOP-6
Text: SSF3428 DESCRIPTION The SSF3428 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =6A RDS(ON) < 51mΩ @ VGS=4.5V
|
Original
|
PDF
|
SSF3428
SSF3428
25unless
TSOP-6
DIODE 30V TSOP
DIODE 30V TSOP-6
|
SOT23-6
Abstract: SSF3420 marking QG SOT23-6 55A SOT23-6
Text: SSF3420 D DESCRIPTION The SSF3420 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =6.3A RDS(ON) < 33mΩ @ VGS=4.5V
|
Original
|
PDF
|
SSF3420
SSF3420
OT23-6
OT23-6
180mm
SOT23-6
marking QG SOT23-6
55A SOT23-6
|
Mosfet
Abstract: SSF3428 DIODE 30V TSOP-6
Text: SSF3428 30V N-Channel MOSFET DESCRIPTION The SSF3428 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID =6A
|
Original
|
PDF
|
SSF3428
SSF3428
Mosfet
DIODE 30V TSOP-6
|
SOT23-6
Abstract: SSF3416 9A SOT23
Text: SSF3416 D DESCRIPTION The SSF3416 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =9A RDS(ON) < 30mΩ @ VGS=4.5V
|
Original
|
PDF
|
SSF3416
SSF3416
OT23-6
OT23-6
180mm
SOT23-6
9A SOT23
|
Mosfet
Abstract: SSF3402
Text: SSF3402 30V N-Channel MOSFET D DESCRIPTION The SSF3402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON) < 30mΩ @ VGS=10V
|
Original
|
PDF
|
SSF3402
SSF3402
OT-23
OT-23
180mm
950TYP
550REF
Mosfet
|
BY228 equivalent
Abstract: BYD14G RU20A cross reference
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
|
Original
|
PDF
|
vSE-db0112-1009
BY228 equivalent
BYD14G
RU20A cross reference
|
bvy27-200
Abstract: BY228 equivalent ERD29-08 ERC06-15s ERC05-10b BYD14J RGP15J equivalent BYD14G ERD28-06S BVY28-200
Text: VISHAY Vishay Semiconductors Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Semiconductors devices and those of other manufacturers. Code Definitions 1 = equivalent 2 = minor electrical difference
|
Original
|
PDF
|
1N5190GP
BYW76
BYT51D
1N5212
UTR2320
BYW32
UTR2340
BYW34
UTR3305
BYW72
bvy27-200
BY228 equivalent
ERD29-08
ERC06-15s
ERC05-10b
BYD14J
RGP15J equivalent
BYD14G
ERD28-06S
BVY28-200
|
BTA136
Abstract: ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207
Text: Cross Reference Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any
|
Original
|
PDF
|
05NH45
05NH46
05NU41
05NU42
0R8GU41
5KA10
5KA10A
5KA11
5KA11A
5KA12
BTA136
ft0818mw
SM4007 Panjit
BY288
FT2516NH
FS0802NH
FT0817MH
ft1208MW
ft0618mh
equivalent components of diode her207
|
IC 7805
Abstract: 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912
Text: I WAY-TECH 33E D E N T E R P R I S E CO 'T'-dB»-’h Tb31flHE O O O O O O l *\ —nfemmm sBM&m > SILICON REGULAR RECTIFIERS FAST RECOVERY RECTIFIERS 1N4001 - 1N4007 1A, 50V-1000V 1N5391 - 1N5399 (1.5A, 50V-1000V) 1N5400 - 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V)
|
OCR Scan
|
PDF
|
1N4001
1N4007
0V-1000V)
1N5391
1N5399
1N5400
1N5408
S6A05
IC 7805
7812 voltage regulator 5A
REGULATOR IC 7805
REGULATOR IC 7824
1n1001
6a smd transistor
REGULATOR IC 7905
7824 5A
REGULATOR IC 7812
7812 7912
|
varistor 102 mb
Abstract: varistor 472 ns b SSF31 SSF32 SSF33 SSF34 SSF51 SSF52 SSF53 SSF54
Text: SINO-ANERICAN SILICON 24E £> • flafll?4b □□□□□51 ? ■ T 03-1S S U P E R F A S T R E C T IF IE R S OPERATING AND STORAGE TEMPERATURE -6 5 °C tO +175°C TYPE Maximum Peak Reverse Voltage Maximum Forward Maximum Reverse . Maximum Forward . ,
|
OCR Scan
|
PDF
|
T03-1S
FAST/DO-201
SSF31
SSF32
SSF33
SSF34
DO-41
350x350x345
DO-15
varistor 102 mb
varistor 472 ns b
SSF51
SSF52
SSF53
SSF54
|
SSF33
Abstract: SSF34 SSF31 SSF32 SSF51 SSF52 SSF53 SSF54 VR-60 T03-1S
Text: SINO-ANERICAN SILICON 24E £> • flafll?4b □□□□□51 ? ■ S U P E R F A S T R E C T IF IE R S T03-1S OPERATING AND STORAGE TEMPERATURE -65°CtO +175°C TYPE Maximum Peak Reverse Voltage Maximum Forward Maximum Reverse . Maximum Forward ., Maximum Average
|
OCR Scan
|
PDF
|
T03-1S
FAST/DO-201
SSF31
SSF32
SSF33
SSF34
AMPERES-SU35
SSF51
SSF52
SSF53
SSF54
VR-60
T03-1S
|
