Mosfet
Abstract: SSF2816EB
Text: SSF2816EB 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V
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SSF2816EB
SSF2816EB
Mosfet
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Untitled
Abstract: No abstract text available
Text: SSF2816EB DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V
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GDSSF2816EB
SSF2816EB
SSF2816EB
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Mosfet
Abstract: SSF2816EBK
Text: SSF2816EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V
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Original
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PDF
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SSF2816EBK
SSF2816EBK
Mosfet
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Untitled
Abstract: No abstract text available
Text: SSF2816EBK DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V
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Original
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PDF
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GDSSF2816EBK
SSF2816EBK
SSF2816E
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