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    Untitled

    Abstract: No abstract text available
    Text: DUAL N-CHANNEL POWER MOSFETS SSD2013 FEATURES • • • • • • • 8SOIC Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF SSD2013 Cto150â

    SSD2104

    Abstract: SSD2108 SSD2101 SSD2013 SSD2003 6250
    Text: FUNCTION GUIDE MOSFETs 8 SOIC SINGLE FET N/P-CHANNEL Part Number B V d s s (V) lo(on)(A) Ftos(on)(a) FWja(K/W) PD(Watt) Page SSD2101|N-CH) 30 7.00 0.030 62.50 2 917 N EW SSD2102(P-CH) -20 -5.30 0.060 62.50 2 922 NEW Package Remark SSD2104{P-CH| -30 -4.60


    OCR Scan     		PDF SSD2101 SSD2102 SSD2104 SSD2106 SSD2108 SSD2002 SSD2003 SSD2004 SS02005 SS02007 SSD2013 SSD2003 6250