SS16 DIODE
Abstract: 403D SS16
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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r14525
SS16/D
SS16 DIODE
403D
SS16
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"Power Diode"
Abstract: marking code ss16 SS16 DIODE schottky 403D SS16 SS16T3 SS16T3G
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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SS16/D
"Power Diode"
marking code ss16
SS16 DIODE schottky
403D
SS16
SS16T3
SS16T3G
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403D
Abstract: SS16 SS16T3
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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SS16/D
403D
SS16
SS16T3
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SS16 DIODE schottky
Abstract: SS16 Diode 1ss16 SMA CASE 403D-02 403D SS16 diode MARKING CODE SS16
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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r14525
SS16/D
SS16 DIODE schottky
SS16 Diode
1ss16
SMA CASE 403D-02
403D
SS16
diode MARKING CODE SS16
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Untitled
Abstract: No abstract text available
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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SS16/D
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diode MARKING CODE SS16
Abstract: 403D SS16 Diode SS16T3
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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SS16 Diode
Abstract: SS16 DIODE schottky marking code ss16 SS16 MARKING
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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1E-02
1E-03
1E-04
1E-05
1E-06
SS16 Diode
SS16 DIODE schottky
marking code ss16
SS16 MARKING
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SS14 DIODE
Abstract: SS14
Text: SS12, SS13, SS14, SS15, SS16 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency
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J-STD-020,
AEC-Q101
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SS14 DIODE
SS14
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SS14
Abstract: No abstract text available
Text: SS12-M3, SS13-M3, SS14-M3, SS15-M3, SS16-M3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency
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SS12-M3,
SS13-M3,
SS14-M3,
SS15-M3,
SS16-M3
J-STD-020,
DO-214AC
50electronic
2002/95/EC.
2002/95/EC
SS14
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SS14 DIODE schottky G
Abstract: DIODE marking code SS14 SS16 DIODE schottky diode marking ss14 diode ss15 SS14 DIODE SS14 DIODE schottky SS13 SS14 SS15
Text: CYStech Electronics Corp. Spec. No. : C338AS Issued Date : 2004.03.10 Revised Date : Page No. : 1/1 1.0Amp. Surface Mount Schottky Barrier Diodes CSMASS1XAS Series Features • Low forward voltage drop • High current capability • High reliability • High surge current capability
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C338AS
MIL-STD-202
UL94V-0
UL94V-0
SS14 DIODE schottky G
DIODE marking code SS14
SS16 DIODE schottky
diode marking ss14
diode ss15
SS14 DIODE
SS14 DIODE schottky
SS13
SS14
SS15
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ss12
Abstract: No abstract text available
Text: SS12 – S100 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 30A Peak
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SMA/DO-214AC,
MIL-STD-750,
ss12
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SS16T3G
Abstract: SBRA8160
Text: SS16T3G, SBRA8160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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SS16T3G,
SBRA8160T3G
SS16/D
SS16T3G
SBRA8160
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Untitled
Abstract: No abstract text available
Text: SS16T3G, SBRA8160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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SS16T3G,
SBRA8160T3G
SS16/D
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Untitled
Abstract: No abstract text available
Text: SS12 – S100 WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Ideally Suited for Automatic Assembly B Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak For Use in Low Voltage Application
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SMA/DO-214AC
SMA/DO-214AC,
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lm358 li ion charger circuit
Abstract: RMS TO DC converter using LM358 lm358 sum Lithium Ion Cells 12V DC DC 3A charger 1N5819 MIC4574 MIC4575 MIC4576 UPL1V470MEH ME 9435 motorola
Text: Application Note 15 Micrel Application Note 15 Practical Switching Regulator Circuits by Brian Huffman Overview A golden power supply that will satisfy every design requirement does not exist. Size, cost, and efficiency are the driving factors for selecting a design, causing each design to be
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Untitled
Abstract: No abstract text available
Text: Formosa MS Chip Schottky Barrier Diodes FM120 THRU FM1100 Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.189 4.8 0.165(4.2) 0.012(0.3) Typ.
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FM120
FM1100
MIL-S-19500
DO-214AC
MIL-STD-750,
300us
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Untitled
Abstract: No abstract text available
Text: Formosa MS Chip Schottky Barrier Diodes FM120 THRU FM1100 Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.185 4.8 0.173(4.4) 0.012(0.3) Typ.
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FM120
FM1100
MIL-S-19500
DO-214AC
MIL-STD-750,
osit18
300us
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diode marking ss14
Abstract: SS14 DIODE FM1100-S FM120-S SS13 SS14 SS15 SS16 SS16 DIODE schottky
Text: Formosa MS Chip Schottky Barrier Diodes FM120-S THRU FM1100-S Silicon epitaxial planer type Features SMA-S Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.205 5.2 0.189(4.8)
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FM120-S
FM1100-S
MIL-S-19500
DO-214AC
MIL-STD-750,
300us
diode marking ss14
SS14 DIODE
FM1100-S
SS13
SS14
SS15
SS16
SS16 DIODE schottky
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SS14 DIODE
Abstract: FM1100-L FM120-L SS13 SS14 SS15 SS16
Text: Formosa MS Chip Schottky Barrier Diodes FM120-L THRU FM1100-L Silicon epitaxial planer type Features SMA-L Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.205 5.2 0.189(4.8)
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FM120-L
FM1100-L
MIL-S-19500
DO-214AC
MIL-STD-750,
300us
SS14 DIODE
FM1100-L
SS13
SS14
SS15
SS16
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FM120 marking
Abstract: SS14 DIODE schottky FM1100 FM120 SS13 SS14 SS15 SS16 ss14 diode f.m 120 01
Text: Formosa MS Chip Schottky Barrier Diodes FM120 THRU FM1100 Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.185 4.8 0.177(4.4) 0.012(0.3) Typ.
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FM120
FM1100
MIL-S-19500
DO-214AC
MIL-STD-750,
300us
FM120 marking
SS14 DIODE schottky
FM1100
SS13
SS14
SS15
SS16
ss14 diode
f.m 120 01
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SS14 DIODE schottky
Abstract: MBRA1100T3 S110 SS14 DIODE MBRA120T3 SS13 SS14 SS15 SS16 diode marking ss14
Text: Formosa MS MBRA120T3 thru MBRA1100T3 Chip Schottky Barrier Diodes Silicon epitaxial planer type Features SMA-L Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.205 5.2 0.189(4.8)
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MBRA120T3
MBRA1100T3
MIL-S-19500
DO-214AC
MIL-STD-750,
Moun80
300us
SS14 DIODE schottky
MBRA1100T3
S110
SS14 DIODE
SS13
SS14
SS15
SS16
diode marking ss14
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SS12-S110
Abstract: SS14 DIODE SS13 SS14 SS15 SS16 SS18
Text: SS12-S110 Chip Schottky Barrier Diodes Features SMA-L Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.205 5.2 0.189(4.8) 0.012(0.3) Typ. For surface mounted applications. 0.110(2.8)
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SS12-S110
MIL-S-19500
DO-214AC
MIL-STD-750,
SS12-S110
SS14 DIODE
SS13
SS14
SS15
SS16
SS18
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FM150L
Abstract: FM160L SS15 SS16 DIODE marking code SS15
Text: Formosa MS Chip Schottky Barrier Diodes FM150L THRU FM160L Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.185 4.8 0.173(4.4) 0.012(0.3) Typ.
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FM150L
FM160L
MIL-S-19500
DO-214AC
MIL-STD-750,
300us
FM160L
SS15
SS16
DIODE marking code SS15
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LL5817
Abstract: smd ss12 DIODE SS34 LL5818 LL5819 SS13 SS14 SS15 SS16 SS19
Text: SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers SUPER FAST RECOVERY DIODE Part CrossMax.Average Peak Peak Fwd Surge Max Forward Max. Reverse Max Reverse Package Number Reference Rect. Current Inverse Current @ 8.3ms Voltage @ Ta 25 C Current @ 25 C Recovery Time
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C3B03
LL5817
smd ss12
DIODE SS34
LL5818
LL5819
SS13
SS14
SS15
SS16
SS19
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