1305A
Abstract: SS05015M
Text: SS05015M Ordering number : ENN8066 SS05015M Schottky Barrier Diode 15V, 500mA Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.3A, VF max=0.4V) (IF=0.5A, VF max=0.45V).
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SS05015M
ENN8066
500mA
1305A
SS05015M
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77191
Abstract: SS05015SH
Text: SS05015SH 注文コード No. N 7 7 1 9 A 三洋半導体データシート 半導体ニューズ No.N7719 とさしかえてください。 SS05015SH ショットキバリアダイオード 15V, 0.5A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。
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SS05015SH
N7719
100mA,
900mm2
62797GI
TB-00001125
IT07927
IT08178
IT06807
77191
SS05015SH
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PDF
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SS05015SH
Abstract: marking SA
Text: SS05015SH Ordering number : ENN7719 SS05015SH Schottky Barrier Diode 15V, 0.5A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.3A, VF max=0.4V) (IF=0.5A, VF max=0.45V).
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SS05015SH
ENN7719
SS05015SH
marking SA
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SS05015SH
Abstract: No abstract text available
Text: SS05015SH SPICE PARAMETER Schottky Barrier DIODE model : DIODE Parameter IS BV RS VJ FC EG KF Temp = Date : Value 4.3u 15 262m 113m 500m 690m Unit A V ohm V eV default Parameter N IBV CJO M TT XTI AF Value 1 24u 78p 350m 2 1 27 deg 2008/1/31 *Information herein is for example only ;
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SS05015SH
SS05015SH
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SS05015M
Abstract: 21505SB IT00636
Text: SS05015M 注文コード No. N 8 0 6 6 三洋半導体データシート N SS05015M ショットキバリアダイオード 15V, 500mA 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。
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SS05015M
500mA
100mA,
600mm2
62797GI
TA-101008
21505SB
BX-0698
IT07926
SS05015M
21505SB
IT00636
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SCH1417
Abstract: SCH2817 SS05015SH TB-00001069
Text: SCH2817 Ordering number : ENN8155 SCH2817 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1417 and a Schottky Barrier Diode (SS05015SH)
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SCH2817
ENN8155
SCH1417)
SS05015SH)
SCH1417
SCH2817
SS05015SH
TB-00001069
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MCH3447
Abstract: MCH5824 marking xa
Text: MCH5824 Ordering number : ENN8201 MCH5824 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET MCH3447 and a schottky barrier diode (SS05015)
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MCH5824
ENN8201
MCH3447)
SS05015)
MCH3447
MCH5824
marking xa
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PDF
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SCH2816
Abstract: SCH1416
Text: SCH2816 Ordering number : ENN8080 SCH2816 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET SCH1416 and a Schottky barrier diode (SS05015)
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SCH2816
ENN8080
SCH1416)
SS05015)
SCH2816
SCH1416
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SCH1412
Abstract: SCH2812 SS05015SH
Text: SCH2812 Ordering number : ENN8105 SCH2812 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET SCH1412 and a Schottky barrier diode (SS05015SH)
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SCH2812
ENN8105
SCH1412)
SS05015SH)
SCH1412
SCH2812
SS05015SH
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SS05015SH
Abstract: No abstract text available
Text: SS05015SH Ordering number : ENN7719A SS05015SH Schottky Barrier Diode 15V, 0.5A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.3A, VF max=0.4V) (IF=0.5A, VF max=0.45V).
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SS05015SH
ENN7719A
SS05015SH
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MCH3447
Abstract: MCH5824 IT09125
Text: 注文コード No. N 8 2 0 1 MCH5824 MCH5824 MOSFET : N チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・N チャネル MOS 形電界効果トランジスタ MCH3447 とショットキバリアダイオード(SS05015)を 1 パッケージに
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MCH5824
MCH3447)
SS05015)
900mm2
21805PE
TB-00001213
IT06804
IT06805
MCH3447
MCH5824
IT09125
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MCH3456
Abstract: MCH5826 SS05015SH
Text: MCH5826 Ordering number : ENN8163 MCH5826 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a N-Channel Silicon MOSFET MCH3456 and a Schottky Barrier Diode (SS05015SH)
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MCH5826
ENN8163
MCH3456)
SS05015SH)
MCH3456
MCH5826
SS05015SH
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SCH2807
Abstract: MARKING QG
Text: SCH2807 Ordering number : ENN8215 SCH2807 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET SCH1407 and a schottky barrier diode (SS05015)
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SCH2807
ENN8215
SCH1407)
SS05015)
SCH2807
MARKING QG
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on line ups circuit diagrams
Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm
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EP51E
CPH6605
MCH6613
ECH8609
CPH3424
CPH3427
K3614
FW343
FW356
FW360
on line ups circuit diagrams
2SK3850
242M
SSFP package
K3492
3ln03
MCH3435
CPH5612
three phase on line ups circuit diagrams
TN6R04
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SBE001
Abstract: SB20015M SS2003M SS3003CH ec2d02b SB007-W03C SB10015M SBS004M ss200 SS10015M
Text: Schottky Barrier Diodes Shortform Table Surfacemount Type Package Series CONTENTS •Packages ■Quick selection guide ■Recommendation circuit diagram ■Lineup according to packages ・ECSP1006-2 ・ECSP1008-2 ・ECSP1608-4 ・SSFP ・SCH6 ・SMCP ・MCP
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ECSP1006-2
ECSP1008-2
ECSP1608-4
SB30W03T
SB40W03T
SB10W05T
SB25W05T
SBE001
SB20015M
SS2003M
SS3003CH
ec2d02b
SB007-W03C
SB10015M
SBS004M
ss200
SS10015M
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2sc6096
Abstract: 2SC5707 2SA2044 ECB23 2sa2039 2sc5707 replacement 30C01M SCH2102 2sa2169 2SB1396S
Text: Low-Saturation Voltage Transistors Shortform Table Surfacemount Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ■ Packages Quiｃｋ selection guide Road Map Application Example Lineup according to packages
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ECSP1208-4-F
12A01M
15C01M
12A01C
15C01C
12A02CH
15C02CH
30A02CH
30C02CH
2sc6096
2SC5707
2SA2044
ECB23
2sa2039
2sc5707 replacement
30C01M
SCH2102
2sa2169
2SB1396S
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2SC3953-SPICE
Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
Text: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f
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12A02CH-SPICE
12A02CH
12A02CH
2SB1205
2SB1205
2SC3953-SPICE
2sa1538 spice
2sc3953 spice
2SC5610
MJE-360
2SC4548
2sk4096
2SB631K
2SC5706 equivalent
2SC2911-SPICE
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SCH2816
Abstract: SCH1416 ns 4249
Text: SCH2816 注文コード No. N 8 0 8 0 MOSFET : N チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード SCH2816 汎用スイッチングデバイス 特長 ・N チャネル MOS 形電界効果トランジスタ（SCH1416）
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SCH2816
SCH1416
SS05015
900mm2
TA-4249
IT06804
IT06805
IT06806
SCH2816
SCH1416
ns 4249
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TT2140
Abstract: transistor TT2140 TT2190 transistor horizontal TT2190 TT2170 TT2190 DATASHEET tt2140 equivalent tt2170 equivalent 2sd2689 inverter transistor TT2140
Text: Ordering number: EP106A Discrete Devices for Video Equipment '04-08 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage
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EP106A
O-220FI5H
TT2140
transistor TT2140
TT2190
transistor horizontal TT2190
TT2170
TT2190 DATASHEET
tt2140 equivalent
tt2170 equivalent
2sd2689
inverter transistor TT2140
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SCH1412
Abstract: SCH2812 SS05015SH
Text: SCH2812 注文コード No. N 8 1 0 5 三洋半導体データシート N SCH2812 MOSFET : N チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・N チャネル MOS 形電界効果トランジスタ（SCH1412）
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SCH2812
SCH1412
SS05015SH
900mm2
N3004PE
TB-00000512
IT06804
IT06805
SCH1412
SCH2812
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