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    SS 7941 Search Results

    SS 7941 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    68779-414HLF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Vertical Header, Through Hole, Double Row, 14 Positions, 2.54 mm (0.100in)Pitch. Visit Amphenol Communications Solutions
    10078794-101LF Amphenol Communications Solutions Metral® HDXS IO Connector, Backplane Connectors, Cable Connector , 24 pair Visit Amphenol Communications Solutions
    68779-410HLF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Vertical Header, Through Hole, Double Row, 10 Positions, 2.54 mm (0.100in)Pitch. Visit Amphenol Communications Solutions
    68794-118LF Amphenol Communications Solutions Quickie® IDC Cable-to-Board Connector System, Shrouded Slim Line Header, Vertical, Through Hole, Double Row, 10 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    68779-416HLF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Vertical Header, Through Hole, Double Row, 16 Positions, 2.54 mm (0.100in)Pitch. Visit Amphenol Communications Solutions
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    SS 7941 Price and Stock

    RAF Electronic Hardware M0794-10-ss

    Standoffs & Spacers 16mm Rd X 25mm X 10.5mm ID
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics M0794-10-ss
    • 1 $8.21
    • 10 $7.78
    • 100 $7.13
    • 1000 $6.05
    • 10000 $6.05
    		Get Quote

    RAF Electronic Hardware M0794-12-ss

    Standoffs & Spacers 16mm Rd X 25mm X 13mm ID
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics M0794-12-ss
    • 1 $8.21
    • 10 $7.78
    • 100 $7.13
    • 1000 $6.05
    • 10000 $6.05
    		Get Quote

    SS 7941 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IR V 2238

    Abstract: 100-DOT BUL 128 A 7941a lc7941 LC7940A LC7941A LC7942A dot lcd W 9719 to-3
    Text: J I SA W O LC7940A, 7941A N 0.2238A CM OS LSI Dot M atrix LCD Drivers M - J l O v e r v ie w The LC7940A, 7941A are large-scale dot m atrix LCD segm ent d r iv ^ B S I s .^ l^ ^ L C ^ 4 0 A ,.^ 4 l A latch display data of 30 bits tran sferred serial or 4-bit parallel from 4 ,/ o n tr o I ^ ^ J f e ^ r ie r ja i p ! LCD drive


    OCR Scan     		PDF LC7940A, LC7941A C7940A C7941A LC7942A IR V 2238 100-DOT BUL 128 A 7941a lc7941 LC7940A LC7942A dot lcd W 9719 to-3

    R6095

    Abstract: No abstract text available
    Text: Back to FETs il\M E S ^ NFD410 M W^NEW ENGLAND SEMICONDUCTOR ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage Vos Gate-Source Voltage


    OCR Scan     		PDF NFD410 R6095

    6-pin LCC

    Abstract: No abstract text available
    Text: Back to FETs POWER MOSFET - N CHANNEL SURFACE MOUNT • • • • Switching Power Supplies Repetitive Avalanche Rating Ceramic Leedless Chip Carrier High Reliability ABSOLUTE M AXIM UM RATINGS Tc = 25°C unless otherwise noted Drain-Source Voltage Gate-Source Voltage


    OCR Scan     		PDF NESL024 00A/iaS, 00A/nS, 6-pin LCC

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs 0 /V E F ^ IP NES250/61 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS


    OCR Scan     		PDF NES250/61

    Untitled

    Abstract: No abstract text available
    Text: 0/V E F ^ IP Back to FETs NES230/5 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS


    OCR Scan     		PDF NES230/5

    NESY140

    Abstract: NESYM140 L038
    Text: NESY140 NESYM140 POWER MOSFET - N CHANNEL • • • • T0257AA PACKAGE Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package High Reliability ABSOLUTE M AXIM UM RA TING S Tc = 25°C unless otherwise noted PA R A M ETER S/TEST CO NDITIO NS


    OCR Scan     		PDF NESY140 NESYM140 NESYM140 T0257AA L038

    NESL024

    Abstract: No abstract text available
    Text: POWER MOSFET - N CHANNEL SURFACE MOUNT • • • • Sw itching P ow er Supplies R epetitive A valanche R ating C eram ic L eedless C hip C arrier High R eliability ABSOLUTE M AXIM UM RATINGS Tc = 25°C unless otherwise noted PA R A M E T E R S/T E ST C O N D IT IO N S


    OCR Scan     		PDF NESL024 NESL024 100/VyS, B0M46 794-i666

    XM46-1158

    Abstract: 0-40Q
    Text: 0 /V EF ^ IP NES230/5 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) VALUE 200 ±20 5.5


    OCR Scan     		PDF NES230/5 00A/nS, XM46-1158 0-40Q

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs NESY140 NESYM140 POWER MOSFET - N CHANNEL • • • • T0257AA PACKAGE Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package High Reliability ABSOLUTE MAXIMUM RATINGS T c = 25°C unless otherwise noted PARAM ETERS/TEST CONDITIONS


    OCR Scan     		PDF NESY140 NESYM140 T0257AA NESYM140

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs 0 /V E F ^ IP NESY034 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) SYMBOL


    OCR Scan     		PDF NESY034

    NESM140

    Abstract: NESM140Z
    Text: 0 /V E F ^ IP NESM140 NESM140Z NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS 0 n • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING T O -254 / 28 A M PE R E 100 V O L T S 0 .0 7 7 Q T O -254Z A BSO LU T E M A X IM U M R A T IN G S (T c = 25°C unless otherw ise noted)


    OCR Scan     		PDF NESM140 NESM140Z XM46-1158 NESM140Z

    65RD

    Abstract: R180100
    Text: 0 /V E F ^ IP Back to FETs NES250/61 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • R E P E T IT IV E A V A L A N C H E R A T IN G S • L O W R DS 0 n • L O W D R IV E R E Q U IR E M E N T • D Y N A M IC d v / d t R A T IN G A BSO LU T E M A X IM U M R A T IN G S (Tc = 25°C unless otherw ise noted)


    OCR Scan     		PDF NES250/61 65RD R180100

    New England Semiconductor

    Abstract: No abstract text available
    Text: 0 /V EF ^ IP NES250/61 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • R E P E T IT IV E A V A L A N C H E R A T IN G S • L O W R DS 0 n • L O W D R IV E R E Q U IR E M E N T • D Y N A M IC d v / d t R A T IN G A BSO LU T E M A X IM U M R A T IN G S (Tc = 25°C unless otherw ise noted)


    OCR Scan     		PDF NES250/61 New England Semiconductor

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs POWER MOSFET N CHANNEL ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (1) Power Dissipation | T A = 25°C


    OCR Scan     		PDF

    h12H

    Abstract: h-12-H NESM10N60
    Text: NESM10N60 POWER MOSFET - N CHANNEL • • • • SWITCHING POWER SUPPLIES REPETITIVE AVALANCHE RATING ISOLATED HERMETIC PACKAGE HIGH RELIABILITY ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted PARAM ETERS/TEST CONDITIONS SYMBOL LIM ITS 600 Drain-Source Voltage


    OCR Scan     		PDF NESM10N60 h12H h-12-H NESM10N60

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs 0 /V E F ^ IP NSG2608 NEW ENGLAND SEMICONDUCTOR • • • • POW ER M OSFET 800 VO LTS r D S o n 2 .4 Q UNTNEL POWER MOSFET - N Switching Power Supplies Repetitive Avalanche Rating Isolated Herm etic Package High Reliability ABSOLUTE M AXIMUM RATINGS (Tc = 25°C unless otherwise noted)


    OCR Scan     		PDF NSG2608 NSG2608

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs 0 /V E F ^ IP NES 130/59 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS 0 n • LOW DRIVE REQUIREM ENT • DYNAM IC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS


    OCR Scan     		PDF NES130/59

    NES150

    Abstract: XM46-1158
    Text: 0 /V E F ^ I P NES150 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS 0N • LOW DRIVE REQUIREM ENT • DYNAM IC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS


    OCR Scan     		PDF NES150 XM46-1158

    NES 0213

    Abstract: N-318
    Text: 0 /V E F ^ IP NES 130/59 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS 0 n • LOW DRIVE REQUIREM ENT • DYNAM IC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS


    OCR Scan     		PDF NES130/59 XM46-1158 NES 0213 N-318

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs NSG 2554 POWER MOSFET • • • • • Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package Ceramic Eyelets High Reliability . , . . . . . . . . . n . _ _ N CHANNEL POWER MOSFET -S y * ^ i Il l 1 • TO-254Z ABSOLUTE MAXIMUM RATINGS Tc = 25UC unless otherwise noted


    OCR Scan     		PDF O-254Z

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs NESY9140 NESYM9140 POWER MOSFET - P CHANNEL T0257AA PACKAGE • • • • Switching Power Supplies Repetitive Avalanche Rating Isolated Hermetic Package High Reliability O ABSOLUTE MAXIMUM RATINGS TL = 25°C unless otherwise noted 1 PARAMETERS/TEST CONDITIONS


    OCR Scan     		PDF NESY9140 NESYM9140 T0257AA NESYM9I40 NESYM9140 00A/nS,

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs 0 /V E F ^ IP NEW ENGLAND SEMICONDUCTOR POWER MOSFET N-CHANNEL • REPETITIVE AVALANCHE RATINGS • L O W R D S O N • LOW DRIVE REQUIREMENT • DYNAMIC dv/dt RATING ABSOLUTE M AXIM U M R A TING S (Tc = 25°C unless otherwise noted) SYM BOL


    OCR Scan     		PDF NESM054

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs 0 /V E F ^ IP NES150/61 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING A B SO L U T E M A X IM U M R A T IN G S (Tc = 25°C unless otherw ise noted)


    OCR Scan     		PDF NES150/61

    lt 860

    Abstract: NESY240 Ot38
    Text: NESY240 POWER MOSFET N CHANNEL REPETITIVE AVALANCHE RATINGS • LOW R,D S O N • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) PA R A M E T E R S / T E ST C O N D IT IO N S


    OCR Scan     		PDF NESY240 O-257AA 794-i666 lt 860 NESY240 Ot38