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    NESM10N60 Search Results

    NESM10N60 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NESM10N60 New England Semiconductor TRANS MOSFET N-CH 600V 10A 3TO-254 Scan PDF
    NESM10N60 New England Semiconductor POWER MOSFET - N CHANNEL Scan PDF

    NESM10N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CP666

    Abstract: CP640 TO-213AA CP664
    Text: FETS Page 1 of 7 Next Home Package Device Type BVDSS Volts RDS on @ 0.5 ID Ohms ID Continuous Amps IDM Pulse Drain Current Amps TO-5 NES130/5 100 0.18 8 32 25 TO-5 NES230/5 200 0.40 5.5 22 25 TO-213AA/66 NSFJ1000 1000 4.2 3.0 10 70 TO-213AA/66 NSFJ120 100


    Original     		PDF O-213AA/66 CP666 CP640 TO-213AA CP664

    h12H

    Abstract: h-12-H NESM10N60
    Text: NESM10N60 POWER MOSFET - N CHANNEL • • • • SWITCHING POWER SUPPLIES REPETITIVE AVALANCHE RATING ISOLATED HERMETIC PACKAGE HIGH RELIABILITY ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted PARAM ETERS/TEST CONDITIONS SYMBOL LIM ITS 600 Drain-Source Voltage


    OCR Scan     		PDF NESM10N60 h12H h-12-H NESM10N60

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs NESM10N60 POWER MOSFET - N CHANNEL • • • • SW ITCHING POW ER SUPPLIES REPETITIVE AVALANCHE RATING ISOLATED HERM ETIC PACKAGE HIGH RELIABILITY ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted PARAMETERS/TEST CONDITIONS SYMBOL


    OCR Scan     		PDF NESM10N60