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    SRAM 68100 Search Results

    SRAM 68100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy
    29705APCB Rochester Electronics LLC 29705A - SRAM Visit Rochester Electronics LLC Buy
    27S03ALM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy

    SRAM 68100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    Untitled

    Abstract: No abstract text available
    Text: KM681000BLI/BLI-L CMOS SRAM 128Kx8 Bit Industrial Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range : -40 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power D issipation Standby (CMOS) : 550^W (Max.)L-Ver.


    OCR Scan     		PDF KM681000BLI/BLI-L 128Kx8 385mW KM681000BLGI/BLGI-L 32pin 525mil) 681000BLTI/BLTI-L 0820F) KM681000BLRI/BLRI-L

    Untitled

    Abstract: No abstract text available
    Text: KM681000BLE / BLE-L CMOS SRAM 128Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CM O S): 550nW(Max.)L-Ver.


    OCR Scan     		PDF KM681000BLE 128Kx8 550nW 275pW 385mW KM681000BLGE/BLGE-L 32-pin 525mil) KM681000BLTE/BLTE-L

    A13CH

    Abstract: km6810008 A12CZ KM681000BLI km6810008l
    Text: CMOS SRAM KM681000BLI / BLI-L 128Kx8 Bit Industrial Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • Industrial Tem perature R ange : -40 to 8 5°C • Fast Access Tim e : 7 0 ,1 0 0 ns M ax. • Low Pow er Dissipation Standby (C M O S ) : 5 5 0 pW (M ax.)L -V er.


    OCR Scan     		PDF KM681000BLI 128Kx8 550pW 385mW KM681000BLGI/BLG 32pin 525mil) KM681000BLTI/BLTI-L 0820F) A13CH km6810008 A12CZ km6810008l

    68 1103

    Abstract: KM681000BL A14F
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced


    OCR Scan     		PDF KM681000BL 128Kx8 385mW KM681OOOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681OOOBLT/BLT-L 0820F) KM681000BLR/BLR-L: 68 1103 A14F

    Untitled

    Abstract: No abstract text available
    Text: KM681001 CMOS SRAM 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CM O S) : 2mA (max.) Operating KM681001P/J-20: 170m A (max.) K M 681001P/J-25: 150mA (max.)


    OCR Scan     		PDF KM681001 KM681001P/J-20: 681001P/J-25: 150mA KM681001P/J-35: 681001P: 32-pin 681001J:

    Untitled

    Abstract: No abstract text available
    Text: KM681002 CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM The KM681002 is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by 8 bits. The KM 681002 uses eight com m on input and output lines and has an output enable pin w hich operates


    OCR Scan     		PDF KM681002 KM681002-17 KM681002-20 681002J: 32-SQJ-400 KM681002 576-bit

    Untitled

    Abstract: No abstract text available
    Text: KM681002B, KM681002BI CMOS SRAM Document Title 128Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Remark Rev No. History Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM681002B, KM681002BI 128Kx8 32-SOJ-300 8/10/12ns 160/150/140mA 160/155/150mA

    681000CLP

    Abstract: P55n 681000C 2U27 0-00C M681000CL
    Text: Advance Information KM681000C Family CMOS SRAM 128Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS • Organization : 128Kx8 • Power Supply Voltage : Single 5V +/-10% The KM681000C family is fabricated


    OCR Scan     		PDF KM681000C 128Kx8 128Kx8 32-DIP, 32-SOP, 32-TSOP KM681000CL 681000CLP P55n 681000C 2U27 0-00C M681000CL

    Untitled

    Abstract: No abstract text available
    Text: KM681002C/CL, KM681002CI CLI PRELIMINARY CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998


    OCR Scan     		PDF KM681002C/CL, KM681002CI 128Kx8 32-SOJ-400 32-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: KM681002A, KM681002AI CMOS SRAM Document T itle 128Kx8 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    OCR Scan     		PDF KM681002A, KM681002AI 128Kx8 12/15/17/20ns 200/190/180/170mA 170/165/165/160mA 32-Pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM681002C/CL, KM681002CI/CLI CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998


    OCR Scan     		PDF KM681002C/CL, KM681002CI/CLI 128Kx8 32-SOJ-400 32-TSOP2-400F I0-050I

    cs1g

    Abstract: No abstract text available
    Text: KM681000ALI/ALI-L CM O S SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 85°C The KM 681000ALI/ALI-L is a 1,048,576-bit high-speed S ta tic R and o m A c c e s s M em ory o rganized as 131,072


    OCR Scan     		PDF KM681000ALI/ALI-L 100ns 110mW KM681000ALPI/ALPI-L: 32-pin 600mil) KM681000ALGI/ALGI-L: 525mil) 681000ALI/ALI-L cs1g

    Untitled

    Abstract: No abstract text available
    Text: KM681001 CMOS SRAM 128Kx 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. The KM681001 Is a 1,048,576-bit • Low Power Dissipation Random Access Memory organized as 131,072 words Standby (TTL) : 40 mA(Max.)


    OCR Scan     		PDF KM681001 128Kx KM681001 576-bit

    cm 324

    Abstract: KM681002A KM681002A-12 KM681002A-15 KM681002A-20 74114
    Text: PRELIMINARY CMOS SRAM KM681002A 128K x 8 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.)


    OCR Scan     		PDF KM681002A KM681002A-12 KM681002A-15 KM681002A-17 KM681002A-20 KM681002AJ 32-SOJ-400 KM681002AT 32-TSOP2-400F KM681002A cm 324 KM681002A-12 KM681002A-15 KM681002A-20 74114

    KM681001ASJ

    Abstract: No abstract text available
    Text: KM681001A CMOS SRAM Document Title 128Kx8 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. H is to ry Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0


    OCR Scan     		PDF KM681001A 128Kx8 15/17/20ns 190/180/170mA 12/12/13ns 8/9/10ns June-1997 KM681001ASJ

    KM681002A

    Abstract: KM681002A-12 KM681002A-15 KM681002A-20
    Text: ADVANCED INFORMATION CM O S SRAM KM681002A 131,072 WORDx8 Bit High-Speed CMOS Static RAM FEATURES • Fast Access Time : 1 2 ,1 5 ,1 7 ,20ns max. • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 3mA (max.) Operating : KM681002A-12 : 185mA (max.)


    OCR Scan     		PDF KM681002A KM681002A-12 185mA KM681002A-15 165mA KM681002A-17 145mA KM681002A-20 125mA KM681002AJ KM681002A KM681002A-12 KM681002A-15

    Untitled

    Abstract: No abstract text available
    Text: KM681002B, KM681002BI CMOS SRAM Document Title 128Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History R ev. 0.0 Initial re le a s e w ith D esign T a rge t.


    OCR Scan     		PDF KM681002B, KM681002BI 128Kx8 32-SOJ-400 32-TSOP2-400F

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft for com m ercial product - Com mercial Product only O ctober 28th, 1992 Prelim inary 0.1 - Initial draft for Extended/Industrial Product


    OCR Scan     		PDF KM681000B 0820F) 0820R)

    KM681001P

    Abstract: cs-113-1 KM681001-35 KM681001-25
    Text: KM681001 CMOS SRAM 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.) Operating KM681001P/J-20: 170mA (max.) KM681001P/J-25: 150mA (max.)


    OCR Scan     		PDF KM681001 KM681001P/J-20: 170mA KM681001P/J-25: 150mA KM681001P/J-35: 130mA KM681001P: 32-pin 400mil) KM681001P cs-113-1 KM681001-35 KM681001-25

    Untitled

    Abstract: No abstract text available
    Text: KM681002A, KM681002AI CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15, 20ns Max. • Low Power Dissipation Standby (TO .) : 25mA(Max.) (CMOS) : 8mA(Max.) Operating KM681002A -1 2 : 170mA(Max.) KM681002A -1 5 : 165mA(Max.)


    OCR Scan     		PDF KM681002A, KM681002AI KM681002A 170mA 165mA 160mA KM681002AJ: 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: KM681001 CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) The KM681001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words


    OCR Scan     		PDF KM681001 KM681001 576-bit 170mA KM681001-25

    KM681001J

    Abstract: KM681001-35 KM681001
    Text: KM681001 CMOS SRAM 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2mA (max.) Operating KM681001 -20 : 1 70mA(max.) KM681001 - 2 5 : 150mA(max.)


    OCR Scan     		PDF KM681001 128KX8 KM681001 170mA 150mA KM681001-35 130mA KM681001P 32-DIP-400 KM681001J

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM681001 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CM OS): 2mA (max.) Operating KM6S1001P/J-20:170mA (max.) KM081001P/J-25:150mA (max.)


    OCR Scan     		PDF KM681001 KM6S1001P/J-20 170mA KM081001P/J-25 150mA KM681001P/J-35 130mA KM681001P: 32-pln 400mil)