54-PIN
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4416016 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT Description The µPD4416016 is a high speed, low power, 16,777,216 bits 1,048,576 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416016 is packaged in a 54-pin plastic TSOP (II).
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PD4416016
16M-BIT
16-BIT
PD4416016
54-pin
I/O16)
PD4416016G5-A15-9JF
PD4416016G5-A17-9JF
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M1407
Abstract: 54-PIN
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4416004 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT Description The µPD4416004 is a high speed, low power, 16,777,216 bits 4,194,304 words by 4 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416004 is packaged in a 54-PIN PLASTIC TSOP (II).
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PD4416004
16M-BIT
PD4416004
54-PIN
PD4416004G5-A15-9JF
PD4416004G5-A17-9JF
M1407
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54-PIN
Abstract: uPD4416016G5-A15-9JF-A
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4416016 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT Description The μPD4416016 is a high speed, low power, 16,777,216 bits 1,048,576 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The μPD4416016 is packaged in a 54-pin plastic TSOP (II).
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PD4416016
16M-BIT
16-BIT
PD4416016
54-pin
I/O16)
PD4416016G5-A15-9JF-A
PD4416016G5-A15-9JF
uPD4416016G5-A15-9JF-A
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M1407
Abstract: 54-PIN
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The µPD4416001 is a high speed, low power, 16,777,216 bits 16,777,216 words by 1 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416001 is packaged in a 54-PIN PLASTIC TSOP (II).
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PD4416001
16M-BIT
16M-WORD
PD4416001
54-PIN
PD4416001G5-A15-9JF
PD4416001G5-A17-9JF
M1407
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4416016 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT Description The μPD4416016 is a high speed, low power, 16,777,216 bits 1,048,576 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The μPD4416016 is packaged in a 54-pin plastic TSOP (II).
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PD4416016
16M-BIT
16-BIT
PD4416016
54-pin
I/O16)
PD4416016G5-A15-9JF
PD4416016G5-A17-9JF
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54-PIN
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4416008 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT Description The µPD4416008 is a high speed, low power, 16,777,216 bits 2,097,152 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416008 is packaged in a 54-PIN PLASTIC TSOP (II) (10.16 mm (400)
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PD4416008
16M-BIT
PD4416008
54-PIN
PD4416008G5-A15-9JF
PD4416008G5-A17-9JF
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54-PIN
Abstract: uPD4416008G5-A15-9JF-A M1408
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4416008 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT Description The μPD4416008 is a high speed, low power, 16,777,216 bits 2,097,152 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The μPD4416008 is packaged in a 54-PIN PLASTIC TSOP (II) (10.16 mm (400)
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PD4416008
16M-BIT
PD4416008
54-PIN
PD4416008G5-A15-9JF-A
PD4416008G5-A15-9JF
uPD4416008G5-A15-9JF-A
M1408
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4416008 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT Description The μPD4416008 is a high speed, low power, 16,777,216 bits 2,097,152 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The μPD4416008 is packaged in a 54-PIN PLASTIC TSOP (II) (10.16 mm (400)
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PD4416008
16M-BIT
PD4416008
54-PIN
PD4416008G5-A15-9JF
PD4416008G5-A17-9JF
PD4416008G5-A15-9JFntrol
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Untitled
Abstract: No abstract text available
Text: SRAM PRELIMINARY AS5LC2M8 2M x 8 HIGH-SPEED CMOS STATIC RAM PIN CONFIGURATIONS 44-pin TSOPII DGC & DGCR FEATURES • High-speed access time: 10, 15 & 20ns • Available in Mil-Temp, Enhanced & Industrial Ranges • High-performance, low-power CMOS process
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44-pin
-40oC
105oC
-55oC
125oC
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block diagram of 8 bit array multiplier
Abstract: No abstract text available
Text: CY14B101KA/CY14B101MA 1-Mbit 128K x 8/64K × 16 nvSRAM with Real Time Clock Features • Industry standard configurations ❐ Single 3 V +20%, –10% operation ❐ Industrial temperature ■ Packages ❐ 44-/54-pin thin small outline package (TSOP II) ❐ 48-Pin shrink small-outline package (SSOP)
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CY14B101KA/CY14B101MA
8/64K
44-/54-pin
48-Pin
CY14B101KA)
CY14B101MA)
block diagram of 8 bit array multiplier
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27934
Abstract: No abstract text available
Text: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)
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CY14B101LA
CY14B101NA
CY14B101LA)
CY14B101NA)
32-pin
44-/54-pin
48-pin
27934
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BAP 16 voltage regulator
Abstract: BAP 52
Text: CY14B104LA, CY14B104NA 4-Mbit 512 K x 8/256 K × 16 nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP II) ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS) compliant ■ 20 ns, 25 ns, and 45 ns access times
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CY14B104LA,
CY14B104NA
44-/54-pin
48-ball
CY14B104LA)
CY14B104NA)
BAP 16 voltage regulator
BAP 52
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CY14B101LA-SZ45XI
Abstract: CY14B101LA-SZ25XI
Text: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)
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CY14B101LA
CY14B101NA
CY14B101LA)
CY14B101NA)
32-pin
44-/54-pin
48-pin
CY14B101LA-SZ45XI
CY14B101LA-SZ25XI
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CY14B101LA-SZ45XI
Abstract: CY14B101LA-SZ25XI
Text: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K x 16 nvSRAM 1-Mbit (128 K x 8/64 K x 16) nvSRAM Features • Packages ❐ 32-Pin small-outline integrated circuit (SOIC) ❐ 44-/54-Pin thin small outline package (TSOP-II) ❐ 48-Pin shrink small-outline package (SSOP)
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CY14B101LA
CY14B101NA
CY14B101LA)
CY14B101NA)
32-Pin
44-/54-Pin
48-Pin
CY14B101LA-SZ45XI
CY14B101LA-SZ25XI
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AN4359
Abstract: No abstract text available
Text: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)
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CY14B101LA
CY14B101NA
32-pin
44-/54-pin
48-pin
48-ball
CY14B101LA)
CY14B101NA)
AN4359
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Untitled
Abstract: No abstract text available
Text: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)
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CY14B101LA
CY14B101NA
CY14B101LA)
CY14B101NA)
32-pin
44-/54-pin
48-pin
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Untitled
Abstract: No abstract text available
Text: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)
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CY14B101LA
CY14B101NA
32-pin
44-/54-pin
48-pin
48-ball
CY14B101LA)
CY14B101NA)
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CY14B101LA-SZ25XI
Abstract: CY14B101LA-SZ45XI CY14B101LA-SP25XIT
Text: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K × 16 nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features • Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP)
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CY14B101LA
CY14B101NA
CY14B101LA)
CY14B101NA)
32-pin
44-/54-pin
48-pin
CY14B101LA-SZ25XI
CY14B101LA-SZ45XI
CY14B101LA-SP25XIT
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6116 RAM
Abstract: 7217 up down counter ram 6116 256KB static RAM PY 88 74FST3390 7M1002 c 3198 c 3198 transistor dual-port RAM
Text: Integrated Device Technology, Inc. As of 10/10/95 Page 1 Alpha-Numeric List of Products Doc ID Product Product Description Speeds Pkgs Temp Volt Avail 2760 10474 1KX4 CORNER POWER Bi SRAM, ECL-10K I/O 4ns C 5V Now 2759 10480 16KX1 Bi SRAM, ECL-10K I/O 4ns
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ECL-10K
16KX1
64KX1
16KX4
64KX4
6116 RAM
7217 up down counter
ram 6116
256KB static RAM
PY 88
74FST3390
7M1002
c 3198
c 3198 transistor
dual-port RAM
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Untitled
Abstract: No abstract text available
Text: EDI9F37512C 512Kx37 SRAM Module 512Kx37 Static RAM CMOS, High Speed Module Features The EDI9F37512C is a high speed 20 megabit Static RAM module organized as 512K words x 37 bits. This module is constructed from five 512Kx8 Static RAMs in TSOP packages on an epoxy laminate FR4 board.
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EDI9F37512C
512Kx37
EDI9F37512C
512Kx8
EDI9F37512C45MMC
EDI9F37512C55MMC
01581USA
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Sw 2604
Abstract: 16kx8 static ram ttl 79r4600 4Kx8 Dual-Port Static RAM 4Kx4 SRAM 49c402 4kx8 sram SW 2603 sem 3040 ram 6116
Text: As of 10/10/95 Page 1 Product Selector Guide RISC Microprocessors and Embedded Control Products Product Product Description 32-bit RISC CPUs Speeds Pkgs Temp Volt Cache Other Data Doc ID Avail Speeds Pkgs Temp Volt Cache Other Data Doc ID Avail Support Chips for 32-bit CPUs
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32-bit
79R3715
R30xx
33MHz
160PQFP
R3041
R3081
R3052E
Sw 2604
16kx8 static ram ttl
79r4600
4Kx8 Dual-Port Static RAM
4Kx4 SRAM
49c402
4kx8 sram
SW 2603
sem 3040
ram 6116
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Untitled
Abstract: No abstract text available
Text: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8 Mbit (1024K x 8/512K x 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP-II) ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)
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CY14B108L
CY14B108N
1024K
8/512K
44-/54-pin
48-ball
CY14B108L)
CY14B108N)
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IS43LR32640
Abstract: is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168
Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive, (ii) communications, (iii) digital consumer, and (iv) industrial/medical/military. These key markets all require high quality and reliability, extended temperature ranges, and long-term support. Our primary products are high speed and
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i1-44-42218428
IS43LR32640
is61wv5128
Product Selector Guide
is42s86400
IS46R16160B
IS25LD010
IS25LD025
IS25LQ
IS62WV5128DALL
BGA 168
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Untitled
Abstract: No abstract text available
Text: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)
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CY14B108L
CY14B108N
44-/54-pin
48-ball
CY14B108L)
CY14B108N)
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