tsha5503
Abstract: TSHA5502 diode SR 09 TSHA 5502 TSHA5203 TSHA550 TSHA5500 TSHA5501
Text: TSHA5500, TSHA5501, TSHA5502, TSHA5503 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: λp = 875 nm
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TSHA5500,
TSHA5501,
TSHA5502,
TSHA5503
2002/95/EC
2002/96/EC
TSHA550.
18-Jul-08
tsha5503
TSHA5502
diode SR 09
TSHA 5502
TSHA5203
TSHA550
TSHA5500
TSHA5501
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TSHA6503
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502
Text: TSHA6500, TSHA6501, TSHA6502, TSHA6503 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 875 nm High reliability
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TSHA6500,
TSHA6501,
TSHA6502,
TSHA6503
2002/95/EC
2002/96/EC
TSHA650.
18-Jul-08
TSHA6503
TSHA650
TSHA6500
TSHA6501
TSHA6502
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FF100R12MT4
Abstract: No abstract text available
Text: Technische Information / technical information FF100R12MT4 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EconoDUAL™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF100R12MT4
FF100R12MT4
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TSHA5500
Abstract: No abstract text available
Text: TSHA5500, TSHA5501, TSHA5502, TSHA5503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm
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TSHA5500,
TSHA5501,
TSHA5502,
TSHA5503
2002/95/EC
2002/96/EC
TSHA550.
18-Jul-08
TSHA5500
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GMO06983
Abstract: Q62702-P5053 marking code diode 04 to-18
Text: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) SFH 4860 Chip position 1 0.9 .1 (2.7) 4.05 3.45 Flat glass cap ø2.54 5.5 5.2 fmo06983 Cathode 1.1 .9 ø4.8 ø4.6 2.54 mm spacing ø0.45 14.5 12.5 GMO06983 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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fmo06983
GMO06983
OHR01872
OHR00391
OHR00389
GMO06983
Q62702-P5053
marking code diode 04 to-18
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GMO06983
Abstract: Q62702-P5053
Text: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) SFH 4860 Wesentliche Merkmale • Hergestellt im Schmezepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an
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OHR00389
GMO06983
GMO06983
Q62702-P5053
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Untitled
Abstract: No abstract text available
Text: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) SFH 4860 Wesentliche Merkmale • Hergestellt im Schmezepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an
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OHR00389
GMOY6983
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Untitled
Abstract: No abstract text available
Text: 2014-01-16 GaAlAs Light Emitting Diode 660 nm GaAlAs-Lumineszensdiode (660 nm) Version 1.1 SFH 4860 Features: Besondere Merkmale: • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case • High reliability • Matches all Si-Photodetectors
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D-93055
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TSUS5400
Abstract: TSUS5402 TSUS5401 TSUS-5402
Text: TSUS5400, TSUS5401, TSUS5402 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: λp = 950 nm
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TSUS5400,
TSUS5401,
TSUS5402
2002/95/EC
2002/96/EC
TSUS5400
18-Jul-08
TSUS5402
TSUS5401
TSUS-5402
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TSUS5400
Abstract: TSUS5401 TSUS TSUS5402 TSUS-5402
Text: TSUS5400, TSUS5401, TSUS5402 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • • • • • • • • • • • 94 8390 DESCRIPTION TSUS5400 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package.
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TSUS5400,
TSUS5401,
TSUS5402
TSUS5400
2002/95/EC
2002/96/EC
18-Jul-08
TSUS5401
TSUS
TSUS5402
TSUS-5402
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Untitled
Abstract: No abstract text available
Text: VSLB3940 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 940 nm • High speed • High radiant power • High radiant intensity
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VSLB3940
2002/95/EC
2002/96/EC
VSLB3940
18-Jul-08
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VSLB3940
Abstract: VISHAY VSLB3940 DATASHEET
Text: VSLB3940 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 940 nm • High speed • High radiant power • High radiant intensity
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VSLB3940
2002/95/EC
2002/96/EC
VSLB3940
18-Jul-08
VISHAY VSLB3940 DATASHEET
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LED905_35_22
Abstract: No abstract text available
Text: High Speed Infrared Emitting Diode, 905 nm, GaAlAs Double Hetero Features • High modulation bandwidth 10 MHz • • • • • • • • • • Extra high radiant power and radiant intensity Low forward voltage Suitable for high pulse current operation
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2002/95/EC
2002/96/EC
led905
LED905_35_22
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GMO06983
Abstract: OHLY0598
Text: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4860 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit
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Untitled
Abstract: No abstract text available
Text: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4860 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit
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Q62702P5053
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GMO06983
Abstract: OHLY0598
Text: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4860 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit
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GMOY6983
Abstract: Q62702-P5053
Text: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) SFH 4860 Wesentliche Merkmale Features • Hergestellt im Schmezepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an
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LNC703PS
Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
Text: Light Emitting Diodes • Red Light Emitting Diodes for Control Appli cation Package Type No. No. 5 LN124W For control If Side view LNA4402F max (V) 40 1 2.6 680 30 PSF02-1 40 2.5 2.2 700 80 02-1 40 1.8 2.2 700 30 5 $ Plastic P5F02-1 LN145W Ap e typ typ
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LN124W
P5F02-1
PSF02-1
LN155
LN184
LN189L
PR002-1
PR002-2
LNC703PS
LN9P01S
P50024
LNA4401
PR0022
LN68
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Untitled
Abstract: No abstract text available
Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Po V F AL e tr.tf Appli Type No. Pac kage If min. max. typ. typ. typ. cation No. (mA) (mW) (V ) (nm) (deg.) (ns) For control For plastic fiber LN143 T0-18 (Small) MR02-1 40 4.5 2.2
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LN143
LN122WS
LN122WF
LN124W
LN145W
T0-18
MR02-1
MF02-1
P5F02-2
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LT3SA
Abstract: LN9705S LN143 LN7301F P700 LN122WF LN122WS LN124W LN145W P3002.2
Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1 40
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LN143
LN122WS
MR02-1
LN122WF
MF02-1
LN124W
LN145W
P5F02-2
PSF02-1
LT3SA
LN9705S
LN7301F
P700
P3002.2
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LN9705
Abstract: LN143 LN122WF LN122WS LN124W LN145W C3021 MR02-1 mr02 LN9705S
Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Pac kage Appli cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1
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LN143
LN122WS
MR02-1
LN122WF
MF02-1
LN124W
LN145W
P5F02-2
PSF02-1
LN9705
C3021
mr02
LN9705S
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B029A
Abstract: UN039
Text: Light Emittihg Diodes • Laser Modules ■ infrared Light Emitting Diodes incl. visible (for Fiber, Control) Applica tions Package If Type No. Vf max. AL typ. •L a s e r Module for Optical Communication Q tr.tl typ (ns) Type No. Package No. LN7301M005
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LN7301M005
122WS
LN122WF
LN184
LN189L
LN9860/P/PR
LN189M
LN189S
LN671
LN51L
B029A
UN039
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAIAs-Lumineszenzdiode 660 nm GaAIAs Light Emitting Diode (660 nm) SFH 4860 Chip position 14.5 12.5 LO o ö (2 .7 ) E 0)1 CO LO cp Q _- c \i w J Cathode 4.05 3.45 Flat glass cap 02.54 GM006983 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GM006983
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PR002-2
Abstract: mru2 PR0022
Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli Type No. cation Po Ap Vf min. max. typ. (mA) (mW) t, ,tf typ. typ. (nm ) (deg.) (ns) If No. T O -18 (Sm all) LN143 For control LN122WS (V ) 40 MRÜ2-1 T O -18 (Sm all)
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Plastic50
P5002-1
P5002-Ì
P5002-1N
P5002-2
P3002-1
P3002-2
P5002-4
PR002-2
mru2
PR0022
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