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    SQD35 Price and Stock

    TT electronics / BI Technologies P170S-QD35BR2K

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    DigiKey P170S-QD35BR2K Tray 5,040
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    Sager P170S-QD35BR2K 630
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    TT electronics / BI Technologies P170S-QD35AR5K

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    DigiKey P170S-QD35AR5K Tray 5,040
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    Sager P170S-QD35AR5K 630
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    TT electronics / BI Technologies P170S-QD35BR20K

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    DigiKey P170S-QD35BR20K Tray 5,040
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    Sager P170S-QD35BR20K 630
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    TT electronics / BI Technologies P170S-QD35AR20K

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    DigiKey P170S-QD35AR20K Tray 5,040
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    Sager P170S-QD35AR20K 630
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    TT electronics / BI Technologies P170S-QD35BR10K

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    DigiKey P170S-QD35BR10K Tray 5,040
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    Sager P170S-QD35BR10K 630
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    SQD35 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SQD35 SanRex Mosfets / Transistors / Fast Recovery Diodes Scan PDF
    SQD35JA140 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    SQD35JA160 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    SQD35N05-26L-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 30A TO252 Original PDF

    SQD35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SQD35N05-26L Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SQD35N05-26L AEC-Q101 2002/95/EC O-252 O-252 SQD35N05-26L-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQD35N05-26L www.vishay.com Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 55 RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.026 ID (A)


    Original     		PDF SQD35N05-26L AEC-Q101 2002/95/EC O-252 SQD35N05-26L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQD35N05-26L www.vishay.com Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 55 RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.026 ID (A)


    Original     		PDF SQD35N05-26L AEC-Q101 2002/95/EC O-252 O-252 SQD35N05-26L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQD35N05-26L Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SQD35N05-26L AEC-Q101 2002/95/EC O-252 O-252 SQD35N05-26L-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SQD35N05-26L Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SQD35N05-26L AEC-Q101 2002/95/EC O-252 O-252 SQD35N05-26L-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQD35N05-26L www.vishay.com Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 55 RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.026 ID (A)


    Original     		PDF SQD35N05-26L AEC-Q101 2002/95/EC O-252 O-252 SQD35N05-26L-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQD35N05-26L Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 55 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.020 ID (A) Configuration RoHS • Package with Low Thermal Resistance


    Original     		PDF SQD35N05-26L AEC-Q101 O-252 O-252 SQD35N05-26L-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SQD35N05-26L www.vishay.com Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 55 RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.026 ID (A)


    Original     		PDF SQD35N05-26L AEC-Q101 2002/95/EC O-252 O-252 SQD35N05-26L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    V3-525

    Abstract: SQD35N05-26L
    Text: SQD35N05-26L Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 55 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.020 ID (A) Configuration RoHS • Package with Low Thermal Resistance


    Original     		PDF SQD35N05-26L AEC-Q101 O-252 SQD35N05-26L-GE3 18-Jul-08 V3-525 SQD35N05-26L

    Untitled

    Abstract: No abstract text available
    Text: SQD35N05-26L Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd


    Original     		PDF SQD35N05-26L AEC-Q101 2002/95/EC O-252 SQD35N05-26L-GE3 18-Jul-08

    SQ2315ES

    Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets Automotive A pplic ations m o sf e t s w w w. v i s h a y. c o m Selector Guide Powe r MOSFETs for Automotive A pplic ations POWER MOSFETs Vishay Siliconix Dedicated Automotive Process Flow Reduces Defects


    Original     		PDF AEC-Q101 O-262, O-263) VMN-SG2151-1009 SQ2315ES SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10

    sqd35J

    Abstract: No abstract text available
    Text: TRANSISTOR M O D U LE < non -IS O L A T E D TYPE SQD35JA140/160 S Q D 3 5 J A is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • Vcbo= 1600V MAX, lc = 35A For AC200V Line)


    OCR Scan     		PDF SQD35JA140/160 AC200V SQD35JA140 SQD35JA160 SQD35JA sqd35J

    Untitled

    Abstract: No abstract text available
    Text: SANSHA ELECTRIC flFfi CO QOQQOQS T • SCMJ 37E P [idSFiTS/TRANSSSTORS/FRO POW ER M OSFET M O DULE Switching Time ns A Voss V FBA50BA50 50 500 60 60 FCA50BC50 50 500 60 60 TYPE Id : td (O N ) tr V OS(O N) V gss Vtso V V V ( rm s ) R th jc t/W - ’? ’•


    OCR Scan     		PDF FBA50BA50 FCA50BC50 FBA75BA50 FCA75BC50 FRG25AA FRS200BA FRD100AA

    SQD35JA160

    Abstract: SQD300BA60 SQD50AB100 sqd65bb75 SQD200A40 SQD200A60 SQD35JA140 CD 300-16 IO 34 SQD300AA100 TA8250
    Text: - 1 9 6 t-y y -s X ? • N P N . lfiftii • ira m ° 7 ° «* u —rh-r /u- • ? - < * - k w ° 1 0 OJÌLh (S B W S lc r) » l iL S S & g : E T 6 I 0 2 (M) a i. H m % VcBO V ebo fé c VCEX # (V ) CV) fe CP B ( T , =25*0) If (I bis) (V ) (A) CA) CA)


    OCR Scan     		PDF 5OAB10 H-101 SQD35JA160 SQD300BA60 SQD50AB100 sqd65bb75 SQD200A40 SQD200A60 SQD35JA140 CD 300-16 IO 34 SQD300AA100 TA8250

    mosfet ir 840

    Abstract: sf200aa20 FCA75BC50 sqd65bb75 FBA75BA50 SF150AA50 FCA50BC50 SF150AA20 250A darlington transistor FBA50BA50
    Text: POW ER M OSFET MODULE Switching Time ns R d s (o n ) V d s (o n ) TYPE mO FBA50BA50 FCA50BC50 FBA50BA FBA75BA50 FCA75BC50 SF100AA50 SF150AA50 SF100AA20 SF150AA20 SF200AA20 SF200AA10 SF200AA10 ☆ New DARLINGTON TRANSISTOR le A VcBO V SQD50 35 50 SQD65 65


    OCR Scan     		PDF FBA50BA50 FCA50BC50 FBA75BA50 FCA75BC50 SF100AA50 SF150AA50 SF100AA20 SF150AA20 SF200AA20 FRS200AA mosfet ir 840 sqd65bb75 250A darlington transistor