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    SQ4840EY Price and Stock

    Vishay Siliconix SQ4840EY-T1_GE3

    MOSFET N-CH 40V 20.7A 8SO
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    DigiKey SQ4840EY-T1_GE3 Digi-Reel 1
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    SQ4840EY-T1_GE3 Cut Tape
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    Vishay Siliconix SQ4840EY-T1_BE3

    MOSFET N-CH 40V 20.7A 8SOIC
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    DigiKey SQ4840EY-T1_BE3 Reel 2,500
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    SQ4840EY-T1_BE3 Cut Tape 1
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    SQ4840EY-T1_BE3 Digi-Reel 1
    • 1 $3.58
    • 10 $2.475
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    Vishay Intertechnologies SQ4840EY-T1_GE3

    Trans MOSFET N-CH 40V 20.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SQ4840EY-T1-GE3)
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    Avnet Americas SQ4840EY-T1_GE3 Reel 2,500
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    Mouser Electronics SQ4840EY-T1_GE3
    • 1 $3.17
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    • 100 $2.15
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    Newark SQ4840EY-T1_GE3 Reel 2,500
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    Bristol Electronics SQ4840EY-T1_GE3 2,500
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    Vishay Intertechnologies SQ4840EY-T1_BE3

    MOSFETs N-CHANNEL 40V
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    Mouser Electronics SQ4840EY-T1_BE3
    • 1 $3.17
    • 10 $2.66
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    Newark SQ4840EY-T1_BE3 Cut Tape 2,500
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    SQ4840EY-T1_BE3 Reel 2,500
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    Vishay Huntington SQ4840EY-T1_GE3

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    NexGen Digital SQ4840EY-T1_GE3 15,000
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    SQ4840EY Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SQ4840EY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 20.7A 8SOIC Original PDF
    SQ4840EY-T1_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 20.7A Original PDF

    SQ4840EY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SQ4840EY Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 40 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.009 ID (A) Configuration RoHS • Package with Low Thermal Resistance 10


    Original     		PDF SQ4840EY AEC-Q101 SQ4840EY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SQ4840EY Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.009 • TrenchFET Power MOSFET RDS(on) (Ω) at VGS = 4.5 V 0.012


    Original     		PDF SQ4840EY 2002/95/EC AEC-Q101 SQ4840EY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQ4840EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SQ4840EY AN609, 1742m 5128m 1136m 5628m 0894m 6457m 04-Apr-11

    SQ4840EY-T1-GE3

    Abstract: 68669
    Text: SQ4840EY Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.009 • TrenchFET Power MOSFET RDS(on) (Ω) at VGS = 4.5 V 0.012


    Original     		PDF SQ4840EY 2002/95/EC AEC-Q101 SQ4840EY-T1-GE3 18-Jul-08 SQ4840EY-T1-GE3 68669

    Untitled

    Abstract: No abstract text available
    Text: SQ4840EY www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A)


    Original     		PDF SQ4840EY AEC-Q101 2002/95/EC SQ4840EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQ4840EY www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A)


    Original     		PDF SQ4840EY AEC-Q101 2002/95/EC SQ4840EY-T1-GE3 11-Mar-11

    SQ4840EY

    Abstract: No abstract text available
    Text: SPICE Device Model SQ4840EY Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SQ4840EY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQ4840EY

    AN609

    Abstract: No abstract text available
    Text: SQ4840EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SQ4840EY AN609, 05-Mar-10 AN609

    8 pins 4 mosfet

    Abstract: No abstract text available
    Text: SQ4840EY www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A)


    Original     		PDF SQ4840EY AEC-Q101 2002/95/EC SQ4840EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 8 pins 4 mosfet

    Untitled

    Abstract: No abstract text available
    Text: SQ4840EY www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V 0.012 ID (A)


    Original     		PDF SQ4840EY AEC-Q101 2002/95/EC SQ4840EY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SQ4840EY-T1-GE3

    Abstract: No abstract text available
    Text: SQ4840EY Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 40 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.009 ID (A) Configuration RoHS • Package with Low Thermal Resistance 10


    Original     		PDF SQ4840EY AEC-Q101 SQ4840EY-T1-GE3 18-Jul-08 SQ4840EY-T1-GE3

    S10-1596-Rev

    Abstract: No abstract text available
    Text: SPICE Device Model SQ4840EY Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SQ4840EY 18-Jul-08 S10-1596-Rev

    SQ4840EY-T1-GE3

    Abstract: No abstract text available
    Text: SQ4840EY Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.009 • TrenchFET Power MOSFET RDS(on) (Ω) at VGS = 4.5 V 0.012


    Original     		PDF SQ4840EY 2002/95/EC AEC-Q101 SQ4840EY-T1-GE3 18-Jul-08 SQ4840EY-T1-GE3

    DPAK/TO-252

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the


    Original     		PDF Ups-2726 VMN-PL0469-1311 DPAK/TO-252

    SQ2315ES

    Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets Automotive A pplic ations m o sf e t s w w w. v i s h a y. c o m Selector Guide Powe r MOSFETs for Automotive A pplic ations POWER MOSFETs Vishay Siliconix Dedicated Automotive Process Flow Reduces Defects


    Original     		PDF AEC-Q101 O-262, O-263) VMN-SG2151-1009 SQ2315ES SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10

    VMN-SG2151-1406

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param


    Original     		PDF AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/


    Original     		PDF AEC-Q101 VMN-SG2151-1212

    SQ3427

    Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
    Text: V i s h ay I n terte c h n olo g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ • Application notes: http://www.vishay.com/mosfets/automotive-mosfets/


    Original     		PDF AEC-Q101 VMN-SG2151-1209 docu33-4-9337-2727 SQ3427 sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309