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    SQ1214A Search Results

    SQ1214A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SQ1214A MSI Electronics 30V Vrrm, 2.2pF Capacitance Varactor Diode Scan PDF
    SQ1214A Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    SQ1214ACHIP MSI Electronics 30V Vrrm, 2.2pF Capacitance Varactor Diode Scan PDF

    SQ1214A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MSI ELECTRONICS INC 3SE £ E3 5b5bMbb 000036b T E M S I T - 0 7 -/7 - HERMETICALLY SEALED GL AS S PACKAGED TUNING DIODES 08 D S D elect ABRUPT - HYPERABRU PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS


    OCR Scan
    PDF 000036b C2/C20 G702A SQ1214A G603A SQ1714 SQ1715 SQ1216A C20/pf

    VB-39

    Abstract: No abstract text available
    Text: HE RME TI CAL L Y S EA L ED GLASS PACKAGED TU N IN G DIODES ABRUPT and HYPERABRUPT E L E C T R IC A L C H A R A C T E R IS T IC S <Ta = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS Oiodt Cap C T I* î'1 0 % P 4 V / 1 M H/ Dr 04 9 SD M H i R A T IO


    OCR Scan
    PDF C2/C20 2/C30 SQ1213A C2/C30 SQ17JB. C2/C15for VB-39

    HA1120

    Abstract: 1n9448 1NS471A diodo 216 diodo 2B 1n6449a IN5144 G702A S01718 DIODO 10 W
    Text: D & IS D elect HERM ETICALLY S EA LED G L A S S P A C K A G E D TU N IN G D IO D ES A B R U PT - H Y PER A B R U P T Ul E L E C T R IC A L CH A RACTERISTICS <Ta = 25» C unless otherwise noted 6ENERAL APPLICATIONS Otode Cap. CT)* ÌT1ON04V/1 MHz TYPE Pf


    OCR Scan
    PDF C2/C20 C2/C10 C2/C30 50MHi SQ1213A G702A SQ1214A sai21 C20/pf HA1120 1n9448 1NS471A diodo 216 diodo 2B 1n6449a IN5144 S01718 DIODO 10 W

    1NS14

    Abstract: 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A
    Text: m s ü H ERMETICALLY S E A L E D elect: ABRUPT - HYPERABRUPT Uf G L A S S P A C K A G ED TUNING D IO D ES ELE C T R IC A L CHARACTERISTICS T a = 25° C unle« otherwise noted Diode Cap (CT)* •M0% M V /1 MH/ G EN ER AL LO W IN D U C T A N C E M IN IA T U R E G L A S S


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    PDF SQ1213A MV83Z MV833 MVB34 MV835 MVS36 MV837 MV838 MVB40 1NS14 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A

    IN5448A

    Abstract: 23128 1N54G 24128 S0MC 1N514C ha1822 ha11l1 MVI652 MV1620
    Text: D & IS D HERM ETICALLY S E A L E D elect: A B R U P T - H Y P E R A B R U P T U» G L A S S P A C K A G ED TUNING D IO D ES E L E C T R IC A L C H A R A C T E R IS T IC S <Ta = 25» C unless otherwise noted LOW INDUCTANCE FOR USE TO 2 .5 GHz GENERAL APPLICATIONS


    OCR Scan
    PDF C2/C20 MV1620 VI824 MVI124 MV1I32 MV1I34 VI136 MV1842 MV1I58 C3/C28 IN5448A 23128 1N54G 24128 S0MC 1N514C ha1822 ha11l1 MVI652

    diod LT 741

    Abstract: 1217A S0171 S0122 738s MVI40 0068AH
    Text: m s n elect: ABRUPT - HYPERABRUPT Uh HERMETICALLY SEA LED G L A S S P A C K A G E D TUNING DIOD ES ELE C T R IC A L CHARACTERISTICS T a = 25» C unless otherwise noted GENERAL APPLICATIONS TYPE R A T IO C2/C20 NO m m /ty p LOW INDUCTANCE FOR USE TO 2.5 6Hz


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    PDF C2/C30 C2/C20 C4/C25 C2/C15 DO-14 diod LT 741 1217A S0171 S0122 738s MVI40 0068AH

    HA1930

    Abstract: No abstract text available
    Text: O ^ G S D elect; HERMETICALLY SEALED G L A SS PACKAGED TUNING DIODES HYPERABRUPT Wr ABRUPT E L E C T R IC A L CH A R A CTER ISTICS T a = 25° C unless otherwise noted GENERAL APPLICATIONS Oiode Cap. IC T)* pf Q4 $ 50 MHz RATIO C2/C20 min/typ NO LOW INDUCTANCE


    OCR Scan
    PDF C2/C20 C2/C30 C4/C25 SQ1213A SQ1714 SQ1215A G702A C20/pf HA1930

    G603A

    Abstract: S0171 DIODE 1N54 HA1930A 1N547S 10YD 1N5470A G605A GDE 6A SQ1213A
    Text: U S I ELECTRONICS INC 3SE £ E3 SbSbMbb 0 0 0 0 3 6 b T BU SI T -07-/7 - D « a D elect HERM ETICALLY S E A LE D G L A S S P A CK A G ED TUNING D IO D ES A BRU PT - H YPER A B R U PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted


    OCR Scan
    PDF 000036b T-07-19 C2/C20 C2/C30 C4/C25 SQ1213A G702A SQ1214A G603A S0171 DIODE 1N54 HA1930A 1N547S 10YD 1N5470A G605A GDE 6A