HA1120
Abstract: 1n9448 1NS471A diodo 216 diodo 2B 1n6449a IN5144 G702A S01718 DIODO 10 W
Text: D & IS D elect HERM ETICALLY S EA LED G L A S S P A C K A G E D TU N IN G D IO D ES A B R U PT - H Y PER A B R U P T Ul E L E C T R IC A L CH A RACTERISTICS <Ta = 25» C unless otherwise noted 6ENERAL APPLICATIONS Otode Cap. CT)* ÌT1ON04V/1 MHz TYPE Pf
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OCR Scan
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C2/C20
C2/C10
C2/C30
50MHi
SQ1213A
G702A
SQ1214A
sai21
C20/pf
HA1120
1n9448
1NS471A
diodo 216
diodo 2B
1n6449a
IN5144
S01718
DIODO 10 W
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1NS14
Abstract: 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A
Text: m s ü H ERMETICALLY S E A L E D elect: ABRUPT - HYPERABRUPT Uf G L A S S P A C K A G ED TUNING D IO D ES ELE C T R IC A L CHARACTERISTICS T a = 25° C unle« otherwise noted Diode Cap (CT)* •M0% M V /1 MH/ G EN ER AL LO W IN D U C T A N C E M IN IA T U R E G L A S S
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OCR Scan
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SQ1213A
MV83Z
MV833
MVB34
MV835
MVS36
MV837
MV838
MVB40
1NS14
1N487A
G610A
1N473A
1MH12
PEC 736
amk 30-2
HA1I34A
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IN5448A
Abstract: 23128 1N54G 24128 S0MC 1N514C ha1822 ha11l1 MVI652 MV1620
Text: D & IS D HERM ETICALLY S E A L E D elect: A B R U P T - H Y P E R A B R U P T U» G L A S S P A C K A G ED TUNING D IO D ES E L E C T R IC A L C H A R A C T E R IS T IC S <Ta = 25» C unless otherwise noted LOW INDUCTANCE FOR USE TO 2 .5 GHz GENERAL APPLICATIONS
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OCR Scan
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PDF
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C2/C20
MV1620
VI824
MVI124
MV1I32
MV1I34
VI136
MV1842
MV1I58
C3/C28
IN5448A
23128
1N54G
24128
S0MC
1N514C
ha1822
ha11l1
MVI652
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HA1930A
Abstract: 1m9141 1NS471A 1M914
Text: CHIP DIODES UHF I VHF TUNING DIODES HIGH 0 FOR MANY UHF -VH F USES LOWEST LEAKAGE HIGH 0 TYPE NO RATIO Û4 0 C2/CM 50 M H; min/mi* C2/CJ0 min/m»* HYPERABRUPT HIGH Q ABRUPT GOOD Q4 50 mm RATIO TYPf NO R ATIO C2/C30 mm/m»* 1YPE #0 P A S S IV A T E D A F T E R TYPE
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OCR Scan
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C4/C60
C2/C30
-----HA1915A
HA1916A
HA1917A
A191IA
HA1919A
1000C
C3/C28
HA1930A
1m9141
1NS471A
1M914
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