P-TO252
Abstract: SPD07N20 SPU07N20 AVALANCHE TRANSISTOR G10FS
Text: SPD07N20 Preliminary data SPU07N20 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS on Package Ordering Code SPD07N20 200 V 7A 0.4 Ω P-TO252 C67078-S.-. - . SPU07N20 200 V 7A 0.4 Ω
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SPD07N20
SPU07N20
P-TO252
C67078-S.
P-TO251
23/Jan/1998
P-TO252
SPD07N20
SPU07N20
AVALANCHE TRANSISTOR
G10FS
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Untitled
Abstract: No abstract text available
Text: SPD07N20 SPU07N20 Preliminary data SIPMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode VDS 200 V R DS on 0.4 Ω 7 A ID • Avalanche rated P-TO251 • dv/dt rated P-TO252 Type Package Ordering Code Packaging SPD07N20 P-TO252
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SPD07N20
SPU07N20
P-TO251
P-TO252
Q67040-S4120-A2
Q67040-S4112-A2
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07N20
Abstract: P-TO252 SPD07N20 SPU07N20
Text: SPD 07N20 Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 200 V • Drain-Source on-state resistance RDS on 0.4 Ω Continuous drain current ID 7 A Enhancement mode • Avalanche rated • dv/dt rated
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07N20
SPD07N20
P-TO252
Q67040-S4120
SPU07N20
P-TO251
Q67040-S4112-A2
07N20
P-TO252
SPD07N20
SPU07N20
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Untitled
Abstract: No abstract text available
Text: SPD 07N20 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 200 V • Drain-Source on-state resistance RDS on 0.4 Ω Continuous drain current ID 7 A Enhancement mode • Avalanche rated • dv/dt rated Pin 1 Type
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07N20
SPD07N20
SPU07N20
PG-TO252
PG-TO251
PG-TO252-3
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07N20
Abstract: No abstract text available
Text: SPD 07N20 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 200 V • Drain-Source on-state resistance RDS on 0.4 Ω Continuous drain current ID 7 A Enhancement mode • Avalanche rated • dv/dt rated Pin 1 Type
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07N20
SPD07N20
SPU07N20
PG-TO252
PG-TO251
07N20
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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Untitled
Abstract: No abstract text available
Text: SPD 07N20 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 200 V • Drain-Source on-state resistance RDS on 0.4 Ω Continuous drain current ID 7 A Enhancement mode • Avalanche rated • dv/dt rated Pin 1 Packaging
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07N20
SPD07N20
SPU07N20
PG-TO252
PG-TO251
Q67040-S4120-A2
Q67040-S4112-A2
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Untitled
Abstract: No abstract text available
Text: SPD 07N20 G SIPMOSÒ Power Transistor Features Product Summary • N channel Drain source voltage DS 200 V · Enhancement mode Drain-Source on-state resistance DS on 0.4 W · Avalanche rated Continuous drain current 7 A D · d /d rated Pin 1 Pin 2 Pin 3 Type
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07N20
SPD07N20
SPU07N20
PG-TO252
PG-TO251
SPD07N20
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07N20
Abstract: SPD07N20 SPU07N20 SPD07N20G
Text: SPD 07N20 G SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 200 V • Drain-Source on-state resistance RDS on 0.4 Ω Continuous drain current ID 7 A Enhancement mode • Avalanche rated • dv/dt rated Pin 1 Type
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07N20
SPD07N20
PG-TO252
SPU07N20
PG-TO251
SPD07N20
PG-TO252-3
SPD07N20G
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07n20
Abstract: P-TO252 SPD07N20 SPU07N20
Text: Preliminary Data SPD 07N20 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 200 V • Drain-Source on-state resistance RDS on 0.4 Ω Continuous drain current ID 7 A Enhancement mode • Avalanche rated • dv/dt rated
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07N20
SPD07N20
P-TO252
Q67040-S4120-A2
SPU07N20
P-TO251
Q67040-S4112-A2
07n20
P-TO252
SPD07N20
SPU07N20
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package
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615NV
OT-223
20iemens
B152-H6493-G5-X-7600
BUZ MOSFET
mosfet BUZ 326
BUP 312
BSS 130
BUP 304
bup 313
615n60
BUZ 840
SGU06N60
BUP 307D
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Untitled
Abstract: No abstract text available
Text: SPD 07N20 G SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 200 V • Drain-Source on-state resistance RDS on 0.4 Ω Continuous drain current ID 7 A Enhancement mode • Avalanche rated • dv/dt rated 2 1 1 2 3
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07N20
SPD07N20
PG-TO252
SPU07N20
PG-TO251
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Untitled
Abstract: No abstract text available
Text: SPD 07N20 G SIPMOSÒ Power Transistor Features Product Summary • N channel Drain source voltage DS 200 V Drain-Source on-state resistance DS on 0.4 W 7 A · Enhancement mode Continuous drain current · Avalanche rated D · d /d rated Pin 1 Pin 2 Pin 3 Type
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07N20
SPD07N20
PG-TO252
SPU07N20
PG-TO251
SPD07N20
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iss-400 diode
Abstract: SPD07N20
Text: SIEMENS SPD07N20 Preliminary data SPU07N20 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type Vds h WDS on Package Ordering Code SPD07N20 200 V 7A 0.4 Q P-T0252 C67078-S.-. -. SPU07N20 200 V 7A
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OCR Scan
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SPD07N20
SPU07N20
P-T0252
P-T0251
C67078-S.
iss-400 diode
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