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    Mean Well SPU03L-05

    DC DC CONVERTER 5V 3W
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    Mean Well SPU03L-12

    DC DC CONVERTER 12V 3W
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    Mean Well SPU03N-12

    DC DC CONVERTER 12V 3W
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    Mean Well SPU03L-15

    DC DC CONVERTER 15V 3W
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    Mean Well SPU03N-05

    DC DC CONVERTER 5V 3W
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    DigiKey SPU03N-05 Bulk 80 1
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    SPU03 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SPU03L-05 MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 5V 3W Original PDF
    SPU03L-12 MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 12V 3W Original PDF
    SPU03L-15 MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 15V 3W Original PDF
    SPU03M-05 MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 5V 3W Original PDF
    SPU03M-12 MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 12V 3W Original PDF
    SPU03M-15 MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 15V 3W Original PDF
    SPU03N-05 MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 5V 3W Original PDF
    SPU03N-12 MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 12V 3W Original PDF
    SPU03N-15 MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 15V 3W Original PDF
    SPU03N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPU03N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, I-PAK, RDSon=1.40Ohm, 3.2A Original PDF
    SPU03N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPU03N60C3BKMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 3.2A TO-251 Original PDF
    SPU03N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPU03N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, I-PAK, RDSon=1.40Ohm, 3.2A Original PDF
    SPU03N60S5 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO251-3; VDS (max): 600.0 V; Package: IPAK (TO-251); RDS(ON) @ TJ=25°C VGS=10: 1,400.0 mOhm; ID(max) @ TC=25°C: 3.2 A; IDpuls (max): 5.7 A; Original PDF
    SPU03N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPU03N60S5BKMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 3.2A TO-251 Original PDF
    SPU03N60S5IN Infineon Technologies N-CHANNEL POWER MOSFET Original PDF

    SPU03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    03N60C3

    Abstract: SPD03N60C3
    Text: SPD03N60C3 SPU03N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω • Extreme dv/dt rated ID 3.2


    Original     		PDF SPD03N60C3 SPU03N60C3 P-TO251 P-TO252 Q67040-S4421 03N60C3 03N60C3 SPD03N60C3

    03n60s5

    Abstract: 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5
    Text: SPU03N60S5 SPD03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 Q67040-S4227 03N60S5 03n60s5 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5

    03n60s5

    Abstract: No abstract text available
    Text: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 PG-TO252. PG-TO251. SPD03N60S5 Q67040-S4227 Q67040-S4187 03n60s5

    03n60

    Abstract: 03n60c3
    Text: SPD03N60C3 SPU03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω


    Original     		PDF SPD03N60C3 SPU03N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4421 03N60C3 03n60

    Untitled

    Abstract: No abstract text available
    Text: SPU03 3W DC-DC Unregulated Single Output Converter E¡ ¡½ ¡E ¡E ¡E ¡E ¡E ¡E ¡E ¡E E¡ series Features : 3000VDC I/O isolation Internal SMD technology Built-in EMI filter Protection: Short circuit Cooling by free air convection Non-conductive plastic case


    Original     		PDF SPU03 3000VDC SPU03L-05 SPU03M-05 SPU03N-05 SPU03L-12 600mA 250mA SPU03L-15 SPU03M-15

    03n60s5

    Abstract: transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 2A TO252-3-11 PG-TO252-3-11 SPD03N60S5 SPU03N60S5
    Text: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 PG-TO252 PG-TO251 Q67040-S4227 03N60S5 03n60s5 transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 2A TO252-3-11 PG-TO252-3-11 SPD03N60S5 SPU03N60S5

    03n60s5

    Abstract: No abstract text available
    Text: SPU03N60S5 SPD03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4227 Q67040-S4187 03n60s5

    Untitled

    Abstract: No abstract text available
    Text: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 PG-TO252 PG-TO251 Q67040-S4227 03N60S5

    03N60C3

    Abstract: IT 239 P-TO252 SDP06S60 SPD03N60C3 SPU03N60C3
    Text: SPD03N60C3 SPU03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		PDF SPD03N60C3 SPU03N60C3 P-TO251 P-TO252 Q67040-S4421 03N60C3 03N60C3 IT 239 P-TO252 SDP06S60 SPD03N60C3 SPU03N60C3

    03n60s5

    Abstract: No abstract text available
    Text: SPU03N60S5 SPD03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4227 Q67040-S4187 03n60s5

    smd diode UJ 64 A

    Abstract: No abstract text available
    Text: SPD03N60C3 SPU03N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 1.4 Ω • Extreme dv/dt rated ID 3.2 A • High peak current capability


    Original     		PDF SPD03N60C3 SPU03N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4421 03N60C3 smd diode UJ 64 A

    03N60S5

    Abstract: SPD03N60S5 P-TO251-3-1 P-TO252 SPU03N60S5
    Text: SPU03N60S5 SPD03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPU03N60S5 SPD03N60S5 SPUx4N60S5/SPDx4N60S5 SPU03N60S5 P-TO251-3-1 P-TO252 03N60S5 Q67040-S4227 03N60S5 SPD03N60S5 P-TO251-3-1 P-TO252

    SPD03N60C3

    Abstract: 03N60C3 P-TO252 SDP06S60 SPU03N60C3
    Text: SPD03N60C3 SPU03N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPD03N60C3 SPU03N60C3 P-TO251 P-TO252 Q67040-S4421 03N60C3 SPD03N60C3 03N60C3 P-TO252 SDP06S60 SPU03N60C3

    03n60s5

    Abstract: Q67040-S4227 TRANSISTOR SMD MARKING CODE 2A TO252 rthjc SPD03N60S5 SPU03N60S5 03n60 Q67040-S4187 SPU03N
    Text: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 PG-TO252 PG-TO251 Q67040-S4227 03N60S5 03n60s5 Q67040-S4227 TRANSISTOR SMD MARKING CODE 2A TO252 rthjc SPD03N60S5 SPU03N60S5 03n60 Q67040-S4187 SPU03N

    03n60s5

    Abstract: No abstract text available
    Text: SPU03N60S5 SPD03N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 1.4 Ω • Optimized capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4227 Q67040-S4187 03n60s5

    03n60s5

    Abstract: SPU03N60S5 P-TO251-3-1 P-TO252 SPD03N60S5
    Text: SPU03N60S5 SPD03N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 Q67040-S4227 03N60S5 03n60s5 SPU03N60S5 P-TO251-3-1 P-TO252 SPD03N60S5

    03n60s5

    Abstract: MSL3 for infineon
    Text: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 PG-TO252. PG-TO251. SPD03N60S5 Q67040-S4227 Q67040-S4187 03n60s5 MSL3 for infineon

    03N60C3

    Abstract: No abstract text available
    Text: SPD03N60C3 SPU03N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 1.4 Ω • Extreme dv/dt rated ID 3.2


    Original     		PDF SPD03N60C3 SPU03N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4421 03N60C3

    03N60C3

    Abstract: No abstract text available
    Text: SPD03N60C3 SPU03N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPD03N60C3 SPU03N60C3 P-TO251 P-TO252 SPD03N60C3 Q67040-S4421 03N60C3 03N60C3

    03n60s5

    Abstract: d marking code dpak transistor P-TO252 SPD03N60S5 SPU03N60S5
    Text: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252. P-TO251. Q67040-S4227 03N60S5 03n60s5 d marking code dpak transistor P-TO252 SPD03N60S5 SPU03N60S5

    03N60C3

    Abstract: DT SMD 03n60 P-TO252 SDP06S60 SPD03N60C3 SPU03N60C3 diode 420v smd diode sm 3c
    Text: SPD03N60C3 SPU03N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A • New revolutionary high voltage technology • Ultra low gate charge P-TO251 • Periodic avalanche rated P-TO252 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPD03N60C3 SPU03N60C3 P-TO251 P-TO252 Q67040-S4421 03N60C3 03N60C3 DT SMD 03n60 P-TO252 SDP06S60 SPD03N60C3 SPU03N60C3 diode 420v smd diode sm 3c

    ZVT full bridge

    Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5
    Text: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.


    Original     		PDF

    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


    Original     		PDF AN-CoolMOS-07 Room14J1 Room1101 AN-CoolMOS-01 AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5

    03N60S5

    Abstract: No abstract text available
    Text: SIEMENS SPU03N60S5 SPD03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPU03N60S5 SPD03N60S5 SPUx4N60S5/SPDx4N60S5 P-T0251 03N60S5 Q67040-S4227 P-T0252 03N60S5