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    SPRAGUE TRANSISTORS Search Results

    SPRAGUE TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SPRAGUE TRANSISTORS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/ 1 : SPRAGUE/SEMICOND 8514019 SPRAGUE! GROUP T3 D • SEMICONDS / ICS ÖS13Ö50 0003550 =5 T^âl^O 93D 0 3 5 5 8 P BIPOLAR TRANSISTOR CHIPS NPN Transistors T H ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type DC Current Gain


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE, T3 D • ÖS13flSG 0Q03Sbö 1 SEMICONDS / ICS 93D 03568.]/ r W ^ BIPOLAR TRANSISTOR CHIPS NPN Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO THBC107 THBC107A THBC107B THBC108 THBC108A


    OCR Scan     		S13flSG 0Q03Sbà THBC107 THBC107A THBC107B THBC108 THBC108A THBC108B THBC108C THBC109 PDF

    TMPFBF244C

    Abstract: tmpfj308 NJ32 TMPF5951 TMPF5952 TMPF5953 TMPF6451 TMPF6452 TMPF6453 TMPF6454
    Text: SPRAGUE/SEÎ1IC0ND 8514019 SPRAGUE. GROUP T3 D • SEMICONDS/ ICS 0513050 93D QD03bll 03611 =1 ■ $ SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH V(BR]GSS Limits Igss Device Type Min. (V)


    OCR Scan     		0D03hll TMPF5951 TMPF5952 TMPF5953 TMPFBF244C tmpfj308 NJ32 TMPF6451 TMPF6452 TMPF6453 TMPF6454 PDF

    2N5219

    Abstract: 2N5136
    Text: SPRAGUE/SEMICOND GROUP 8514019 13 SPRAGUE. » • 0513050 GGQ3SÖÖ 7 ■ SEM ICONDS / IC S 93D 03588 3> PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘T P ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type TP5131 TP5132


    OCR Scan     		1flS13fiSQ O-226AA/STYLE 2N5219 2N5136 PDF

    thc2510

    Abstract: No abstract text available
    Text: I SPRAGUE/SEMICOND 8514019 SPRAGUE. GROUP =13 D • SEMICONDS/ ICS ÖS1BÖSG 93D 000355=1 03559 BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C 500 10 750 10 360 0.01 225 2.0 225 2.0 5.0 5.0 5.0 4.5 4.5


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    2N5485

    Abstract: TP5668 NJ132 NJ16 TP4858A TP4859 TP4859A TP4860 TP4860A TP4861
    Text: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE, T3 D • 0513350 00Q3b01 SE MI C ON DS /ICS 93D 03601 h M J> 7 ^ ^ -Z .S PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits Igss Min. (V) IG


    OCR Scan     		DD03b01 TP4858A NJ132 TP4859 TP4859A O-226AA/STYLES 2N5485 TP5668 NJ132 NJ16 TP4860 TP4860A TP4861 PDF

    2K25

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND 8514019 GROUP SPRAGUE/ □3 ñ513ñSQ D OGQHStb 03E SEM ICONOS/ICS 2 04566 D 0.0090SQ. 0.0090 0.0260 FB 0.076" x 0.076" POWER TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = + 25°C 16 lc Max. Iebo Ic e s V BR CES V(BR)CEO Min. Min. @ VCB (V)


    OCR Scan     		0090SQ. THYE01 THYE02 THYF01 THYF02 THYG01 THYG02 THYH01 THYH02 THFA01 2K25 PDF

    sprague MPSA05

    Abstract: No abstract text available
    Text: SPRAGUE/SEfllCOND 13 GROUP 8 51 40 19 SPRAGUE. D • flS13flS0 ODOBSTl SEMICONDS/ I C S 7 93D 0 3 5 9 1 ■ ' D PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO V _ 60 60


    OCR Scan     		flS13flS0 MPS3721 MPS3826 MPS3827 MPS5127 MPS5131 MPS5132 MPS5133 O-226AA/STYLE sprague MPSA05 PDF

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: ULN2083 array MC1310P sfc*2741 TBA221 741TC uln2046a All in one TRANSISTOR REPLACEMENT GUIDE SFC2741 MC1305P
    Text: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.


    OCR Scan     		ULS-2045H ULN-2046A ULN-2047A ULN-2054A ULN-2081A ULN2289A SFC2741C SFC2741 ULN2151D ULN2151M TRANSISTOR REPLACEMENT GUIDE ULN2083 array MC1310P sfc*2741 TBA221 741TC uln2046a All in one TRANSISTOR REPLACEMENT GUIDE MC1305P PDF

    NJ99

    Abstract: NJ132 NJ16 TMPF4858A TMPF4859 TMPF4859A TMPF4860A TMPF4861 TMPF4861A TMPF4867
    Text: ^3 SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE. D 13 A 5 Q Q 003 b i o T " | i • flS SEMICONDS / ICS 93D 03610 3> 7 ^-Z.f-Z.S SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh V(BR]GSS Min. (V) TMPF4858A


    OCR Scan     		Q003bio TMPF4858A NJ132 TMPF4859 TMPF4859A NJ99 NJ132 NJ16 TMPF4860A TMPF4861 TMPF4861A TMPF4867 PDF

    TMPF3820

    Abstract: TMPF5116 PJ99 TMPFJ271 TMPF5020 TMPF2608 TMPF2609 TMPF3329 TMPF3330 TMPF3331
    Text: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE. ^3 D • flS13flS0 0003^12 0 S E M IC ON D S/ ICS 93D 03612 SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C Vgs oh V(BR)GSS Device Type Min. ftlG (V) (l*A) TMPF2608


    OCR Scan     		AS13A5D TMPF2608 TMPF2609 TMPF3329 TMPF3820 TMPF5116 PJ99 TMPFJ271 TMPF5020 TMPF3330 TMPF3331 PDF

    motorola transistor 7439

    Abstract: 741TC TRANSISTOR REPLACEMENT GUIDE sprague transistors MC1304 SN75474 ULN2151D MC1310P 3067 dual transistor motorola transistor array 14 pin dip
    Text: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.


    OCR Scan     		ULS-2045H ULN-2046A ULN-2047A ULN-2054A ULN-2081A MC1439G MC1439P1 MC1741CG MC1741CP1 MC3003 motorola transistor 7439 741TC TRANSISTOR REPLACEMENT GUIDE sprague transistors MC1304 SN75474 ULN2151D MC1310P 3067 dual transistor motorola transistor array 14 pin dip PDF

    ULN2046A

    Abstract: uln npn array 5 pin transistor 3 amp NPN Two monolithic transistors differential pair transistor 14pin npn transistor ULN-2082A ULN2083A Differential Amplifiers NPN Monolithic Transistor Pair
    Text: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.


    OCR Scan     		ULS-2045H ULN-2046A ULN-2047A ULN-2054A ULN-2081A ULN-2046A) 16-lead ULN2046A uln npn array 5 pin transistor 3 amp NPN Two monolithic transistors differential pair transistor 14pin npn transistor ULN-2082A ULN2083A Differential Amplifiers NPN Monolithic Transistor Pair PDF

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND CROUP 85 14 0 1 9 SPRAGUE, T3 D • S E M I C O N D S / ICS ÔS1 3 flS0 0 0 0 3 5 7 2 3 93D 03572 _ BIPOLAR TRANSISTOR CHIPS PNP Transistors T H ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C


    OCR Scan     		THC4037 THC4058 THC4059 THC4060 THC4061 THC4062 THC4121 THC4122 THC4125 THC4126 PDF

    T3D+53

    Abstract: t3d 05 T3D 53
    Text: SPRAGUE/SEMICOND GR OU P T3 85 14 01 9 SPRAGUE. D • 0513050 OGGBSTfl T ■ S E M I C O N D S / ICS D 93D 03598 PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain IcBO Device Type


    OCR Scan     		PSD51 PSD54 PSH81 PSL51 O-226AA/STYLE T3D+53 t3d 05 T3D 53 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SENICOND 8514019 SPRAGUE. GROUP D • 0513050 S E M IC ON DS /ICS G QD 3 b G 4 1 93D 03604 J> - 7 ^ 2 .7 - z . s " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C Vgs oH VjBfljGSS I Device Type


    OCR Scan     		TP3994 TP4381 TP5018 TP5019 TP5020 TP5021 TP5033 TP5114 TP5115 TP5116 PDF

    TRANSISTOR 1003

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND 8514 01 9 SPRAGUE, GR OU P ^3 D • flSlBSSD G0G35t>7 T ■ S E M I C O N D S / ICS 93D 03567 BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘IMPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type MPSA43C MPSD01C MPSD02C MPSD03C


    OCR Scan     		G0G35t MPSA43C MPSD01C MPSD02C MPSD03C MPSD04C MPSD05C MPSD06C MPSL01C MPSU45C TRANSISTOR 1003 PDF

    WR504

    Abstract: UGN5276K an 5276 Sprague Electric Capacitor
    Text: i . . SPRAGUE/SEMICOND GROUP 14E D • ÔS13ÔS0 OOOMÔST b ■ T - 6 S ‘-t?s- COMPLEMENTARY OUTPUT POWER HALL LATCHES Sprague Type UGN5275K, UGN5276K and UGN5277K latching Hall effect sensors are bipolar integrated circuits designed for electronic


    OCR Scan     		UGN5275K, UGN5276K UGN5277K WR504 an 5276 Sprague Electric Capacitor PDF

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND GROUP T3 D • ÖS13ÖSO 0Ü03SÔS ! 8 5 1 4 0 1 9 SPRAGUE. SEM ICONDS/ IC S 1 ■ 93D 0 35 85 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO


    OCR Scan     		1flS13fiSQ O-226AA/STYLE PDF

    2N3416 Sprague

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND ! 8514019 GROUP SPRAGUE! T3 D • 0 5 1 3 0 5 0 00Q35fifci 3 ■ SE M IC O N D S / IC S 93D 03586 Ï PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain


    OCR Scan     		00Q35fifci 40ISSIPATION 1flS13fiSQ O-226AA/STYLE 2N3416 Sprague PDF

    BCW71 AG

    Abstract: No abstract text available
    Text: SPRAGUE/SEfllCOND GR OU P 8514019 SPRAGUE. TB flS13ñSQ G003L.05 B D SE M IC O N D S/ IC S 93D 0 3 6 0 51>" SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELEC TR IC AL CHARACTERISTICS at Tfl = 25°C IcBO BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW65A


    OCR Scan     		flS13 G003L BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW65A BCW71 AG PDF

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/S EM IC ON D GROUP 851 4019 SPRAGUE, ^ D • S E M I C O N D S / ICS 93D 03616J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Monolithic Dual Devices ELECTRICAL CHARACTERISTICS at TA = 25°C loss V gS[oH) Igss V BHJGSS Device Type 2N3954


    OCR Scan     		03616J) 2N3954 2N3955 2N3956 2N3957 2N5045 2N5046 2N5047 2N5196 2N5197 PDF

    mpsa18

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND GROUP T3 85 14 0 19 SPRAGUE. D • ÔS13ÛS0 OGOBSTH S E M I C O N D S / ICS 1 ■ 93 D 0 3 5 9 2 X> PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain ^CBO Device


    OCR Scan     		MPSA12 MPSA13 MPSA14 MPSA18 MPSA20 MPSA25 MPSA26 MPSA27 MPSA28 MPSA29 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND 8514019 GROUP SPRAGUE. =13 D • Ô5 1 3 Ô S 0 D 0 0 3 5 Ö7 SEM ICO N D S/IC S 93D 5 ■ 03587 P . T " " PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain


    OCR Scan     		2N3904 2N3974 2N3976 TP4013 TP4014 2N4123 2N4124 2N4140 2N4141 2N4286 PDF