MAX1627
Abstract: 040TM R040 TRANSISTOR CUT 3332 593D686X0020E2W MAX1626 MBRS340T3 NSQ03A03 TPSE227M010R0100 TPSE686M020R0150
Text: MAX1626 Evaluation Kit _Component List DESIGNATION QTY DESCRIPTION C1, C2 2 68µF, 20V tantalum capacitors AVX TPSE686M020R0150 or Sprague 593D686X0020E2W C3 1 220µF, 10V tantalum capacitor AVX TPSE227M010R0100 or Sprague 593D227X0010E2W
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MAX1626
TPSE686M020R0150
593D686X0020E2W
TPSE227M010R0100
593D227X0010E2W
NSQ03A03
MBRS340T3
CDRH125-220
DO3316P-223
IRF7416,
MAX1627
040TM
R040
TRANSISTOR CUT 3332
593D686X0020E2W
MBRS340T3
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/ 1 : SPRAGUE/SEMICOND 8514019 SPRAGUE! GROUP T3 D • SEMICONDS / ICS ÖS13Ö50 0003550 =5 T^âl^O 93D 0 3 5 5 8 P BIPOLAR TRANSISTOR CHIPS NPN Transistors T H ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type DC Current Gain
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TRANSISTOR REPLACEMENT GUIDE
Abstract: ULN2083 array MC1310P sfc*2741 TBA221 741TC uln2046a All in one TRANSISTOR REPLACEMENT GUIDE SFC2741 MC1305P
Text: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.
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ULS-2045H
ULN-2046A
ULN-2047A
ULN-2054A
ULN-2081A
ULN2289A
SFC2741C
SFC2741
ULN2151D
ULN2151M
TRANSISTOR REPLACEMENT GUIDE
ULN2083 array
MC1310P
sfc*2741
TBA221
741TC
uln2046a
All in one TRANSISTOR REPLACEMENT GUIDE
MC1305P
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motorola transistor 7439
Abstract: 741TC TRANSISTOR REPLACEMENT GUIDE sprague transistors MC1304 SN75474 ULN2151D MC1310P 3067 dual transistor motorola transistor array 14 pin dip
Text: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.
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ULS-2045H
ULN-2046A
ULN-2047A
ULN-2054A
ULN-2081A
MC1439G
MC1439P1
MC1741CG
MC1741CP1
MC3003
motorola transistor 7439
741TC
TRANSISTOR REPLACEMENT GUIDE
sprague transistors
MC1304
SN75474
ULN2151D
MC1310P
3067 dual transistor
motorola transistor array 14 pin dip
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ULN2046A
Abstract: uln npn array 5 pin transistor 3 amp NPN Two monolithic transistors differential pair transistor 14pin npn transistor ULN-2082A ULN2083A Differential Amplifiers NPN Monolithic Transistor Pair
Text: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.
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ULS-2045H
ULN-2046A
ULN-2047A
ULN-2054A
ULN-2081A
ULN-2046A)
16-lead
ULN2046A
uln npn array
5 pin transistor 3 amp
NPN Two monolithic transistors
differential pair transistor
14pin npn transistor
ULN-2082A
ULN2083A
Differential Amplifiers
NPN Monolithic Transistor Pair
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE, T3 D • ÖS13flSG 0Q03Sbö 1 SEMICONDS / ICS 93D 03568.]/ r W ^ BIPOLAR TRANSISTOR CHIPS NPN Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO THBC107 THBC107A THBC107B THBC108 THBC108A
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S13flSG
0Q03SbÃ
THBC107
THBC107A
THBC107B
THBC108
THBC108A
THBC108B
THBC108C
THBC109
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TMPFBF244C
Abstract: tmpfj308 NJ32 TMPF5951 TMPF5952 TMPF5953 TMPF6451 TMPF6452 TMPF6453 TMPF6454
Text: SPRAGUE/SEÎ1IC0ND 8514019 SPRAGUE. GROUP T3 D • SEMICONDS/ ICS 0513050 93D QD03bll 03611 =1 ■ $ SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH V(BR]GSS Limits Igss Device Type Min. (V)
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0D03hll
TMPF5951
TMPF5952
TMPF5953
TMPFBF244C
tmpfj308
NJ32
TMPF6451
TMPF6452
TMPF6453
TMPF6454
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2N5219
Abstract: 2N5136
Text: SPRAGUE/SEMICOND GROUP 8514019 13 SPRAGUE. » • 0513050 GGQ3SÖÖ 7 ■ SEM ICONDS / IC S 93D 03588 3> PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘T P ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type TP5131 TP5132
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1flS13fiSQ
O-226AA/STYLE
2N5219
2N5136
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NPN Transistor BC548B
Abstract: transistor bc238b TP2369A t092 transistor pro-electron BCS48
Text: SPRAGUE/SEMICOND GROUP 14E D • T -U 'O I ÖS13ÖS0 □ □□ 47ei4 4 ■ SPRAGUE PROELECTRON T092 TRANSISTOR TYPES» PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA
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BC167A
BC167B
BC168A
BC168B
BC168C
BC169B
BC169C
BC182LA
BC182LB
BC212LA
NPN Transistor BC548B
transistor bc238b
TP2369A
t092 transistor
pro-electron
BCS48
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thc2510
Abstract: No abstract text available
Text: I SPRAGUE/SEMICOND 8514019 SPRAGUE. GROUP =13 D • SEMICONDS/ ICS ÖS1BÖSG 93D 000355=1 03559 BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C 500 10 750 10 360 0.01 225 2.0 225 2.0 5.0 5.0 5.0 4.5 4.5
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2N5485
Abstract: TP5668 NJ132 NJ16 TP4858A TP4859 TP4859A TP4860 TP4860A TP4861
Text: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE, T3 D • 0513350 00Q3b01 SE MI C ON DS /ICS 93D 03601 h M J> 7 ^ ^ -Z .S PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits Igss Min. (V) IG
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DD03b01
TP4858A
NJ132
TP4859
TP4859A
O-226AA/STYLES
2N5485
TP5668
NJ132
NJ16
TP4860
TP4860A
TP4861
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2K25
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND 8514019 GROUP SPRAGUE/ □3 ñ513ñSQ D OGQHStb 03E SEM ICONOS/ICS 2 04566 D 0.0090SQ. 0.0090 0.0260 FB 0.076" x 0.076" POWER TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = + 25°C 16 lc Max. Iebo Ic e s V BR CES V(BR)CEO Min. Min. @ VCB (V)
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0090SQ.
THYE01
THYE02
THYF01
THYF02
THYG01
THYG02
THYH01
THYH02
THFA01
2K25
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sprague MPSA05
Abstract: No abstract text available
Text: SPRAGUE/SEfllCOND 13 GROUP 8 51 40 19 SPRAGUE. D • flS13flS0 ODOBSTl SEMICONDS/ I C S 7 93D 0 3 5 9 1 ■ ' D PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO V _ 60 60
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flS13flS0
MPS3721
MPS3826
MPS3827
MPS5127
MPS5131
MPS5132
MPS5133
O-226AA/STYLE
sprague MPSA05
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NJ99
Abstract: NJ132 NJ16 TMPF4858A TMPF4859 TMPF4859A TMPF4860A TMPF4861 TMPF4861A TMPF4867
Text: ^3 SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE. D 13 A 5 Q Q 003 b i o T " | i • flS SEMICONDS / ICS 93D 03610 3> 7 ^-Z.f-Z.S SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh V(BR]GSS Min. (V) TMPF4858A
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Q003bio
TMPF4858A
NJ132
TMPF4859
TMPF4859A
NJ99
NJ132
NJ16
TMPF4860A
TMPF4861
TMPF4861A
TMPF4867
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND CROUP 85 14 0 1 9 SPRAGUE, T3 D • S E M I C O N D S / ICS ÔS1 3 flS0 0 0 0 3 5 7 2 3 93D 03572 _ BIPOLAR TRANSISTOR CHIPS PNP Transistors T H ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C
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THC4037
THC4058
THC4059
THC4060
THC4061
THC4062
THC4121
THC4122
THC4125
THC4126
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/SEtllCOND 8514019 SPRAGUE, G R OU P 13 T> • SEMICONDS/ IC S Ö513ÖSD GGGaSbT 93D 0 3 5 6 9 2>^ r - â 3 - i ■ - BIPOLAR TRANSISTOR CHIPS NPN Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TÄ = 25°C DC Current Gain Ic ß O
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THBC317B
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T3D+53
Abstract: t3d 05 T3D 53
Text: SPRAGUE/SEMICOND GR OU P T3 85 14 01 9 SPRAGUE. D • 0513050 OGGBSTfl T ■ S E M I C O N D S / ICS D 93D 03598 PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain IcBO Device Type
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PSD51
PSD54
PSH81
PSL51
O-226AA/STYLE
T3D+53
t3d 05
T3D 53
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/SENICOND 8514019 SPRAGUE. GROUP D • 0513050 S E M IC ON DS /ICS G QD 3 b G 4 1 93D 03604 J> - 7 ^ 2 .7 - z . s " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C Vgs oH VjBfljGSS I Device Type
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TP3994
TP4381
TP5018
TP5019
TP5020
TP5021
TP5033
TP5114
TP5115
TP5116
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TRANSISTOR 1003
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND 8514 01 9 SPRAGUE, GR OU P ^3 D • flSlBSSD G0G35t>7 T ■ S E M I C O N D S / ICS 93D 03567 BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘IMPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type MPSA43C MPSD01C MPSD02C MPSD03C
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G0G35t
MPSA43C
MPSD01C
MPSD02C
MPSD03C
MPSD04C
MPSD05C
MPSD06C
MPSL01C
MPSU45C
TRANSISTOR 1003
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WR504
Abstract: UGN5276K an 5276 Sprague Electric Capacitor
Text: i . . SPRAGUE/SEMICOND GROUP 14E D • ÔS13ÔS0 OOOMÔST b ■ T - 6 S ‘-t?s- COMPLEMENTARY OUTPUT POWER HALL LATCHES Sprague Type UGN5275K, UGN5276K and UGN5277K latching Hall effect sensors are bipolar integrated circuits designed for electronic
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UGN5275K,
UGN5276K
UGN5277K
WR504
an 5276
Sprague Electric Capacitor
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND GROUP T3 D • ÖS13ÖSO 0Ü03SÔS ! 8 5 1 4 0 1 9 SPRAGUE. SEM ICONDS/ IC S 1 ■ 93D 0 35 85 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO
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1flS13fiSQ
O-226AA/STYLE
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2N3416 Sprague
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND ! 8514019 GROUP SPRAGUE! T3 D • 0 5 1 3 0 5 0 00Q35fifci 3 ■ SE M IC O N D S / IC S 93D 03586 Ï PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain
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00Q35fifci
40ISSIPATION
1flS13fiSQ
O-226AA/STYLE
2N3416 Sprague
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BCW71 AG
Abstract: No abstract text available
Text: SPRAGUE/SEfllCOND GR OU P 8514019 SPRAGUE. TB flS13ñSQ G003L.05 B D SE M IC O N D S/ IC S 93D 0 3 6 0 51>" SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELEC TR IC AL CHARACTERISTICS at Tfl = 25°C IcBO BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW65A
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flS13
G003L
BCW31
BCW32
BCW33
BCW60A
BCW60B
BCW60C
BCW60D
BCW65A
BCW71 AG
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/S EM IC ON D GROUP 851 4019 SPRAGUE, ^ D • S E M I C O N D S / ICS 93D 03616J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Monolithic Dual Devices ELECTRICAL CHARACTERISTICS at TA = 25°C loss V gS[oH) Igss V BHJGSS Device Type 2N3954
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03616J)
2N3954
2N3955
2N3956
2N3957
2N5045
2N5046
2N5047
2N5196
2N5197
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