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    SPP17N80 Price and Stock

    Infineon Technologies AG SPP17N80C3XKSA1

    MOSFET N-CH 800V 17A TO220-3
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    DigiKey SPP17N80C3XKSA1 Tube 2,269 1
    • 1 $5.41
    • 10 $3.612
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    Avnet Americas SPP17N80C3XKSA1 Tube 500 15 Weeks 50
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    SPP17N80C3XKSA1 Tube 4 Weeks 149
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    Mouser Electronics SPP17N80C3XKSA1 1,056
    • 1 $4.63
    • 10 $3.62
    • 100 $2.59
    • 1000 $2.1
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    Verical SPP17N80C3XKSA1 11,548 4
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    SPP17N80C3XKSA1 1,500 500
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    SPP17N80C3XKSA1 155 4
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    Arrow Electronics SPP17N80C3XKSA1 11,549 15 Weeks 1
    • 1 $3.7529
    • 10 $3.1752
    • 100 $2.4342
    • 1000 $1.8492
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    SPP17N80C3XKSA1 155 15 Weeks 1
    • 1 $4.419
    • 10 $3.567
    • 100 $2.574
    • 1000 $1.875
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    Newark SPP17N80C3XKSA1 Bulk 848 1
    • 1 $4.68
    • 10 $3.93
    • 100 $3.17
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    Bristol Electronics SPP17N80C3XKSA1 13
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    Rochester Electronics SPP17N80C3XKSA1 386 1
    • 1 $2.45
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    • 100 $2.31
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    Chip1Stop SPP17N80C3XKSA1 155
    • 1 $4.419
    • 10 $3.567
    • 100 $2.574
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    EBV Elektronik SPP17N80C3XKSA1 4,000 16 Weeks 500
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    New Advantage Corporation SPP17N80C3XKSA1 1,000 1
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    Win Source Electronics SPP17N80C3XKSA1 132,000
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    • 100 $1.573
    • 1000 $1.319
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    Infineon Technologies AG SPP17N80C3

    MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SPP17N80C3 1,365
    • 1 $4.06
    • 10 $3.78
    • 100 $3.45
    • 1000 $2.89
    • 10000 $2.7
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    RS SPP17N80C3 Bulk 7 2 Weeks 1
    • 1 $4.23
    • 10 $3.72
    • 100 $3.17
    • 1000 $3.17
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    Bristol Electronics SPP17N80C3 550
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    SPP17N80C3 8
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    Quest Components SPP17N80C3 440
    • 1 $4.9275
    • 10 $4.9275
    • 100 $3.0386
    • 1000 $2.7101
    • 10000 $2.7101
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    TME SPP17N80C3 9 1
    • 1 $3.12
    • 10 $2.62
    • 100 $2.43
    • 1000 $2.43
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    Rutronik SPP17N80C3 Tube 850 50
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    • 100 $2.39
    • 1000 $1.96
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    Component Electronics, Inc SPP17N80C3 31
    • 1 $5.38
    • 10 $5.38
    • 100 $4.04
    • 1000 $3.5
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    Win Source Electronics SPP17N80C3 132,300
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    • 100 $1.573
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    Infineon Technologies AG SPP17N80C3XKSA1.

    Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:227W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon SPP17N80C3XKSA1.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SPP17N80C3XKSA1. Bulk 500 50
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    • 100 $3.17
    • 1000 $2.65
    • 10000 $2.65
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    Infineon Technologies AG SPP17N80C3XK

    Trans MOSFET N-CH 800V 17A 3-Pin(3+Tab) TO-220AB Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop SPP17N80C3XK 11,549
    • 1 $4.44
    • 10 $3.7
    • 100 $2.24
    • 1000 $1.96
    • 10000 $1.87
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    SPP17N80 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SPP17N80C2 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP17N80C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 800.0 V; Package: TO-220; RDS(ON) @ TJ=25°C VGS=10: 290.0 mOhm; ID(max) @ TC=25°C: 17.0 A; IDpuls (max): 51.0 A; Original PDF
    SPP17N80C3 Infineon Technologies CoolMOS Power MOSFET, 800V, RDSon=0.29 ?, 17.0A Original PDF
    SPP17N80C3 Infineon Technologies Cool MOS Power Amp., 800V 17A 208W, MOS-FET N-Channel enhanced Original PDF
    SPP17N80C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 17A TO-220AB Original PDF

    SPP17N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    17N80C3

    Abstract: 17n80c 17n80 SPP17N80C3 SPB17N80C3
    Text: SPP17N80C3 SPB17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary  Worldwide best R DS on in TO 220 VDS 800 V  Ultra low gate charge RDS(on) 290 m Periodic avalanche rated


    Original     		PDF SPP17N80C3 SPB17N80C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4353 17N80C3 17N80C3 17n80c 17n80 SPP17N80C3 SPB17N80C3

    17n80c3

    Abstract: SPA17 17n80
    Text: SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220-3-1 • Periodic avalanche rated


    Original     		PDF SPP17N80C3 SPA17N80C3 PG-TO-220-3-31: P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 SPA17N80C3 17N80C3 17N80C3 SPA17 17n80

    17n80c3

    Abstract: 17n80 spa17n80c3 17N80C SPB17N80C3 UJ14 Q67040-S4441
    Text: Final data SPP17N80C3, SPB17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 • Ultra low gate charge P-TO220-3-31 VDS 800 V RDS(on) 0.29 Ω ID 17 A P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP17N80C3, SPB17N80C3 SPA17N80C3 P-TO-220-3-31: SPP17N80C3 SPA17N80C3 P-TO220-3-1 P-TO263-3-2 Q67040-S4353 17n80c3 17n80 17N80C UJ14 Q67040-S4441

    MOSFET 17N80c3

    Abstract: 17n80
    Text: SPP17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPP17N80C3 PG-TO220-3 17N80C3 MOSFET 17N80c3 17n80

    Untitled

    Abstract: No abstract text available
    Text: SPP17N80C2 SPB17N80C2 Target data sheet Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Worldwide best R DS on in TO 220 · Ultra low gate charge · Periodic avalanche rated


    Original     		PDF SPP17N80C2 SPB17N80C2 P-TO220-3-1 P-TO263-3-2 P-TO220-3-1 P-TO263-3-2

    17N80C3

    Abstract: SPP17N80C3 17n80 17n80c SPB17N80C3
    Text: SPP17N80C3 SPB17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 290 mΩ


    Original     		PDF SPP17N80C3 SPB17N80C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4353 17N80C3 17N80C3 SPP17N80C3 17n80 17n80c SPB17N80C3

    17n80c3

    Abstract: 17n80 Q67040-s4354 17n80c Q67040-S4441 Q67040-S4353 spa17n80c3
    Text: Preliminary data SPP17N80C3, SPB17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge ID • Periodic avalanche rated


    Original     		PDF SPP17N80C3, SPB17N80C3 SPA17N80C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP17N80C3 17n80c3 17n80 Q67040-s4354 17n80c Q67040-S4441 Q67040-S4353 spa17n80c3

    17N80C3

    Abstract: No abstract text available
    Text: SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature VDS 800 V RDS on 0.29 Ω ID 17 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 PG-TO220-3-31 PG-TO220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP17N80C3 SPA17N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4353 17N80C3 17N80C3

    17n80c3

    Abstract: No abstract text available
    Text: SPP17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPP17N80C3 PG-TO220-3 17N80C3 17n80c3

    SPP17N80C2

    Abstract: SPB17N80C2 Q67040-s4354 Q67040-S4353
    Text: SPP17N80C2 SPB17N80C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO 220 · Product Summary VDS 800 V Ultra low gate charge R DS(on) 290 mW ·


    Original     		PDF SPP17N80C2 SPB17N80C2 P-TO263-3-2 P-TO220-3-1 Q67040-S4353 SPP17N80C2 SPB17N80C2 Q67040-s4354 Q67040-S4353

    17n80c3

    Abstract: UJ14
    Text: SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP17N80C3 SPA17N80C3 PG-TO-220-3-31: P-TO220-3-31 PG-TO220-3-31 PG-TO220 SPA17N80C3 Q67040-S4353 17n80c3 UJ14

    17n80c3

    Abstract: No abstract text available
    Text: Final data SPP17N80C3, SPB17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge ID • Periodic avalanche rated


    Original     		PDF SPP17N80C3, SPB17N80C3 SPA17N80C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP17N80C3 Q67040-S4353 17n80c3

    17n80c3

    Abstract: 17n80 SPA17N80C3 17n80c diode 400V 4A TO220 HEATSINK DATASHEET PG-TO220 SMD BR 17 PG-TO220-3-31 SPP17N80C3
    Text: SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP17N80C3 SPA17N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4353 17N80C3 17n80c3 17n80 SPA17N80C3 17n80c diode 400V 4A TO220 HEATSINK DATASHEET PG-TO220 SMD BR 17 SPP17N80C3

    17n80c3

    Abstract: No abstract text available
    Text: SPP17N80C3 SPB17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω


    Original     		PDF SPP17N80C3 SPB17N80C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4353 Q67040-S4354 17n80c3

    Untitled

    Abstract: No abstract text available
    Text: SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP17N80C3 SPA17N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4353 17N80C3

    MOSFET 17N80c3

    Abstract: 17N80C3 mosfet 800 v JESD22 PG-TO220-3 SPP17N80C3 17n80
    Text: SPP17N80C3 CoolMOS Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 88 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPP17N80C3 PG-TO220-3 17N80C3 MOSFET 17N80c3 17N80C3 mosfet 800 v JESD22 PG-TO220-3 SPP17N80C3 17n80

    17n80c3

    Abstract: SP000216353
    Text: SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO220-3-1 • Periodic avalanche rated


    Original     		PDF SPP17N80C3 SPA17N80C3 PG-TO-220-3-31: P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 SPA17N80C3 17N80C3 17N80C3 SP000216353

    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


    Original     		PDF SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60

    ZVT full bridge

    Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5
    Text: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.


    Original     		PDF

    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


    Original     		PDF AN-CoolMOS-07 Room14J1 Room1101 AN-CoolMOS-01 AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		PDF Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696