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    SPP02N60 Search Results

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    SPP02N60 Price and Stock

    Rochester Electronics LLC SPP02N60C3XKSA1

    MOSFET N-CH 600V 1.8A TO220-3
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    DigiKey SPP02N60C3XKSA1 Tube 73,020 630
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    Rochester Electronics LLC SPP02N60S5

    N-CHANNEL POWER MOSFET
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    DigiKey SPP02N60S5 Bulk 577
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    Infineon Technologies AG SPP02N60C3HKSA1

    MOSFET N-CH 650V 1.8A TO220-3
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    DigiKey SPP02N60C3HKSA1 Tube 500
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    Infineon Technologies AG SPP02N60C3XKSA1

    LOW POWER_LEGACY
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    DigiKey SPP02N60C3XKSA1 Tube
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    Avnet Americas SPP02N60C3XKSA1 Tube 4 Weeks 758
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    Rochester Electronics SPP02N60C3XKSA1 148,734 1
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    Chip 1 Exchange SPP02N60C3XKSA1 2,000
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    Infineon Technologies AG SPP02N60S5HKSA1

    MOSFET N-CH 600V 1.8A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP02N60S5HKSA1 Tube 500
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    Find more SPP02N60 price and stock on Findchips.com

    SPP02N60 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SPP02N60C3 Infineon Technologies Cool MOS Power Amp., 650V 1.8A 25W, MOS-FET N-Channel enhanced Original PDF
    SPP02N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=3.00 ?, 1.8A Original PDF
    SPP02N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP02N60C3HKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 1.8A TO-220AB Original PDF
    SPP02N60C3IN Infineon Technologies N-CHANNEL POWER MOSFET Original PDF
    SPP02N60C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF
    SPP02N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP02N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP02N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=3.00 ?, 1.8A Original PDF
    SPP02N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP02N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPP02N60S5HKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 1.8A TO-220 Original PDF

    SPP02N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    02n60s5

    Abstract: Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181
    Text: SPP02N60S5 SPB02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4181 02N60S5 02n60s5 Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181

    02N60C3

    Abstract: smd diode marking 20 smd transistor marking 03 02N60 250TD
    Text: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances


    Original     		PDF SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4392 Q67040-S4393 02N60C3 smd diode marking 20 smd transistor marking 03 02N60 250TD

    V6 marking code

    Abstract: diode marking v6
    Text: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances


    Original     		PDF SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4392 Q67040-S4393 V6 marking code diode marking v6

    02N60S5

    Abstract: SPB02N60S5 SPP02N60S5
    Text: SPP02N60S5 SPB02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 SPP02N60S5 P-TO220-3-1 02N60S5 Q67040-S4181 P-TO263-3-2 02N60S5 SPB02N60S5

    02N60

    Abstract: 02N60C3 SPB02N60C3 SPP02N60C3 SP*02N60 marking code V6 diode
    Text: SPP02N60C3 SPB02N60C3 Final data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances


    Original     		PDF SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4392 02N60C3 02N60 02N60C3 SPB02N60C3 SPP02N60C3 SP*02N60 marking code V6 diode

    Q67040-S4181

    Abstract: 02N60 SPB02N60S5 SPP02N60S5 02N60S5 Q67040S4181 Q67040-S4212 Transistor 02N60S5 P-TO-263-3-2
    Text: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4181 02N60S5 Q67040-S4181 02N60 SPB02N60S5 SPP02N60S5 02N60S5 Q67040S4181 Q67040-S4212 Transistor 02N60S5 P-TO-263-3-2

    02N60C3

    Abstract: SPP02N60C3 SPB02N60C3 02n60c
    Text: SPP02N60C3 SPB02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated


    Original     		PDF SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4392 02N60C3 02N60C3 SPP02N60C3 SPB02N60C3 02n60c

    SPP02N60S5

    Abstract: k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5
    Text: SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


    Original     		PDF SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 SPPx5N60S5/SPBx5N60S5 Q67040-S4181 02N60S5 SPP02N60S5 k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5

    02N60C3

    Abstract: No abstract text available
    Text: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4392 Q67040-S4393 02N60C3

    SPB02N60S5

    Abstract: SPP02N60S5 02N60S5 siemens 230 98 O
    Text: SPP02N60S5 SPB02N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 SPP02N60S5 P-TO220-3-1 P-TO263-3-2 02N60S5 Q67040-S4181 SPB02N60S5 02N60S5 siemens 230 98 O

    SPP02N60S5

    Abstract: No abstract text available
    Text: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP02N60S5 P-TO220-3-1 PG-TO220-3-1 SPP02N60S5 PG-TO220-3-1 Q67040-S4181 02N60S5

    SPB02N60S5

    Abstract: SPP02N60S5 02N60 02N60S5 02n60s
    Text: SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 P-TO220-3-1 02N60S5 Q67040-S4181 P-TO263-3-2 SPP02N60S5 SPB02N60S5 02N60 02N60S5 02n60s

    SPB02N60S5

    Abstract: SPP02N60S5
    Text: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4181 Q67040-S4212 SPB02N60S5

    02N60C3

    Abstract: SPB02N60C3 SPP02N60C3
    Text: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4392 02N60C3 02N60C3 SPB02N60C3 SPP02N60C3

    SPP02N60S5

    Abstract: 02N60S5
    Text: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1


    Original     		PDF SPP02N60S5 PG-TO220 P-TO220-3-1 Q67040-S4181 02N60S5 SPP02N60S5 02N60S5

    02N60C3

    Abstract: SPB02N60C3 SPP02N60C3 02N60
    Text: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4392 02N60C3 02N60C3 SPB02N60C3 SPP02N60C3 02N60

    Untitled

    Abstract: No abstract text available
    Text: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1


    Original     		PDF SPP02N60S5 PG-TO220 P-TO220-3-1 Q67040-S4181 02N60S5

    SPB02N60S5

    Abstract: SPP02N60S5
    Text: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO263-3-2


    Original     		PDF SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4181 Q67040-S4212 SPB02N60S5

    SMD Diode V6 marking code

    Abstract: SPP02N60C3
    Text: SPP02N60C3 SPB02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated


    Original     		PDF SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4392 Q67040-S4393 SMD Diode V6 marking code

    P-TO263-3-2

    Abstract: Q67040-S4181 SPB02N60S5 SPP02N60S5
    Text: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4181 Q67040-S4212 P-TO263-3-2 SPB02N60S5

    SPP02N60S5

    Abstract: 02n60s5
    Text: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1


    Original     		PDF SPP02N60S5 PG-TO220 P-TO220-3-1 Q67040-S4181 02N60S5 SPP02N60S5 02n60s5

    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


    Original     		PDF SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60

    ZVT full bridge

    Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5
    Text: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 P-T0220-3-1 02N60S5 Q67040-S4181 P-T0263-3-2