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    SPI1 Price and Stock

    Abracon Corporation ASPI-1040HI-100M-T05

    FIXED IND 10UH 7.5A 30 MOHM SMD
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    DigiKey ASPI-1040HI-100M-T05 Reel 26,000 500
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    Avnet Americas ASPI-1040HI-100M-T05 Reel 20 Weeks 500
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    Mouser Electronics ASPI-1040HI-100M-T05 1,401
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    RS ASPI-1040HI-100M-T05 Bulk 20 Weeks 500
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    TTI ASPI-1040HI-100M-T05 Reel 1,000 500
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    TME ASPI-1040HI-100M-T05 300 300
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    Avnet Abacus ASPI-1040HI-100M-T05 Reel 22 Weeks 500
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    Master Electronics ASPI-1040HI-100M-T05 4,800
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    New Advantage Corporation ASPI-1040HI-100M-T05 1,000 1
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    Abracon Corporation ASPI-104S-220M-T

    FIXED IND 22UH 2.5A 73 MOHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ASPI-104S-220M-T Reel 6,750 750
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    ASPI-104S-220M-T Cut Tape 1,020 1
    • 1 $0.94
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    Avnet Americas ASPI-104S-220M-T Reel 22 Weeks 750
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    Avnet Abacus ASPI-104S-220M-T Reel 24 Weeks 750
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    Master Electronics ASPI-104S-220M-T 1,500
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    Abracon Corporation ASPI-1306S-220M-T

    FIXED IND 22UH 3.1A 59 MOHM SMD
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    DigiKey ASPI-1306S-220M-T Reel 1,750 250
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    ASPI-1306S-220M-T Cut Tape 175 1
    • 1 $1.6
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    Avnet Abacus ASPI-1306S-220M-T Reel 22 Weeks 1,000
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    Abracon Corporation ASPI-104S-270M-T

    FIXED IND 27UH 2.3A 93 MOHM SMD
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    DigiKey ASPI-104S-270M-T Reel 1,500 750
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    ASPI-104S-270M-T Cut Tape 295 1
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    Avnet Americas ASPI-104S-270M-T Reel 9,750 22 Weeks 750
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    Avnet Abacus ASPI-104S-270M-T Reel 24 Weeks 750
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    Abracon Corporation ASPI-104S-330M-T

    FIXED IND 33UH 2.2A 93 MOHM SMD
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    DigiKey ASPI-104S-330M-T Reel 750 750
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    ASPI-104S-330M-T Cut Tape 278 1
    • 1 $1.16
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    Avnet Abacus ASPI-104S-330M-T Reel 24 Weeks 750
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    Find more SPI1 price and stock on Findchips.com

    SPI1 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SPI100N03S203 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SPI100N03S2-03 Infineon Technologies OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.3m ?, 100A, LL Original PDF
    SPI100N03S2-03 Unknown OptiMOS Power Amplifier, 30V 100A 300W, MOS-FET N-Channel enhanced Original PDF
    SPI100N03S2L03 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SPI100N03S2L-03 Infineon Technologies OptiMOS Power-Transistor Original PDF
    SPI100N03S2L-03 Infineon Technologies OptiMOS Power MOSFET, 30V, TO-262, RDSon = 3m ?, 100A, LL Original PDF
    SPI10N10 Infineon Technologies SIPMOS Power-Transistor Original PDF
    SPI10N10L Infineon Technologies Power MOSFET, 100V, TO-262, RDSon=154mOhm, 10A, LL Original PDF
    SPI11N60C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO262-3; VDS (max): 600.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 380.0 mOhm; ID(max) @ TC=25°C: 11.0 A; IDpuls (max): 33.0 A; Original PDF
    SPI11N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPI11N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPI11N60C3HKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 11A TO-262 Original PDF
    SPI11N60C3 SMD Infineon Technologies CoolMOS Power MOSFET, 600V, TO-262, RDSon=0.38 ?, 11.0A Original PDF
    SPI11N60C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 11A TO-262 Original PDF
    SPI11N60CFD Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO262-3; VDS (max): 600.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 440.0 mOhm; ID(max) @ TC=25°C: 11.0 A; IDpuls (max): 28.0 A; Original PDF
    SPI11N60CFDHKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 11A TO-262 Original PDF
    SPI11N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPI11N60S5 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO262-3; VDS (max): 600.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 340.0 mOhm; ID(max) @ TC=25°C: 11.0 A; IDpuls (max): 22.0 A; Original PDF
    SPI11N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-262, RDSon=0.38 ?, 11.0A Original PDF
    SPI11N60S5 Unknown Cool MOS Power Amp., 600V 11A 125W, MOS-FET N-Channel enhanced Original PDF

    SPI1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    16n50c3

    Abstract: 16n50c3 equivalent SPB16N50C3 SPA16N50C3 SPI16N50C3 SPP16N50C3
    Text: SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262 P-TO263-3-2


    Original     		PDF SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 P-TO220-3-31 P-TO262 P-TO263-3-2 P-TO220-3-1 16n50c3 16n50c3 equivalent SPB16N50C3 SPA16N50C3 SPI16N50C3 SPP16N50C3

    11N60C3

    Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3

    12N50C3

    Abstract: SPA12N50C3 PG-TO220-3-31 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking
    Text: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: 12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking

    be75A

    Abstract: switching power supply 1000W output AC DC Switch power 10w BE75 EN61000-3-2 12V1 ATX12V CSA22 EPS12V
    Text: Sparkle Power Inc. A Leading Power Supply Manufacturer Web site: www.sparklepower.com MAGNA 1000 R-SPI1000GCM (RoHS Compliant) 1000 Watts ATX12V and EPS12V Switching Power Supply Features • Complied with ATX12V and EPS12V standard • Active Power Factor Correction (PFC) meet EN61000-3-2


    Original     		PDF R-SPI1000GCM) ATX12V EPS12V EN61000-3-2 2002/95/EC 140mV 200mV be75A. be75A switching power supply 1000W output AC DC Switch power 10w BE75 EN61000-3-2 12V1 CSA22

    STM32F103RET6

    Abstract: PC13-TAMPER-RTC USB1X90A LUMBERG r11 TSX-3225 16MHZ blm18eg221sn1 220n x2 KSSG1708 USB-1X90A KEEG1542PBL
    Text: C5 4.7uF 1 2 3 4 5 6 SPI1_NSS SPI1_MISO CN1 MLW20G 3V3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 USB_A Vbus DD+ GND SH1 SH2 CN2 USB1X90A PCB C2 1uF USB5V Internal pull-up Internal pull-down JTMS JTCK NRST R9 10K 3V3 3V3 DBGACK R14 R2 10K M25P64-VME6G


    Original     		PDF MLW20G USB1X90A M25P64-VME6G 100nF LD3985XX33 100pF BLM18EG221SN1 STM32F103RET6 PC13-TAMPER-RTC LUMBERG r11 TSX-3225 16MHZ blm18eg221sn1 220n x2 KSSG1708 USB-1X90A KEEG1542PBL

    ticket vending machine circuit

    Abstract: "thermal printer" schematic STEVAL-IPC002V1 ST thermal printer Parking ticket vending machine printer head vending machine schematic STM32 lcd STM32 vending machine
    Text: STEVAL-IPC002V1 Thermal printer-based parking ticket vending machine Data brief Features • Based on the STM32 microcontroller ■ Thermal printer is interfaced through SPI2. ■ Stepper motor driver interfaced through SPI1 used to rotate the printer head while printing


    Original     		PDF STEVAL-IPC002V1 STM32 ticket vending machine circuit "thermal printer" schematic STEVAL-IPC002V1 ST thermal printer Parking ticket vending machine printer head vending machine schematic STM32 lcd vending machine

    018H

    Abstract: HT66F40
    Text: SPI Data Transmission in the HT56R2x and Relevant Programming SPI Data Transmission in the HT56R2x and Relevant Programming D/N：HA0213E Introduction The HT56R2x includes an internal Serial Interface Function within which is included an 2 SPI, I C and SPI1 interface types. The SPI1 is mainly used to transmit voice


    Original     		PDF HT56R2x D/NHA0213E HT56R24 HT66F40 018H

    11N60S5

    Abstract: SPI11N60S5
    Text: SPI11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1


    Original     		PDF SPI11N60S5 SPPx2N60S5 P-TO262 11N60S5 Q67040-S4250 11N60S5 SPI11N60S5

    Untitled

    Abstract: No abstract text available
    Text: 1 2 3 4 5 VBAT LOADER 6 7 8 PA13/J_TMS/SWDIO PA14/J_TCK/SWCLK VCC A A C1 C2 C3 C4 C5 .1uF .1uF .1uF .1uF .1uF VCC C8 C9 2.2uF 2.2uF 47 VCAP_2 STM32F40X 12 GND GND VCC X2 VCC X1 1 2 4 6 8 10 GND PB9/I2C1_SDA/CAN1_TX B PC15/XI32 PB4/J_TRST/PWM/SPI1_MISO +5V


    Original     		PDF PA13/J PA14/J STM32F40X PB10/I2C2 PC15/XI32 PB13/SPI2 MISO/ADC12 TX/ADC123 RX/ADC123

    11N60S5 equivalent

    Abstract: 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760
    Text: SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO262 • Periodic avalanche rated VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 Q67040-S4198 11N60S5 equivalent 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760

    11N60CFD

    Abstract: SPI11N60CFD SPP11N60CFD
    Text: SPI11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPI11N60CFD PG-TO262 11N60CFD PG-TO-262-3-1 11N60CFD SPI11N60CFD SPP11N60CFD

    Untitled

    Abstract: No abstract text available
    Text: SPI110LV Documentation Installation Guide Optically Isolated Adapter for JTAG Emulators Application Equipment Protection Software Debug Hardware Debug Warranty: 1 year from date of purchase Part #:701240 SPI110LV Opto Pod


    Original     		PDF SPI110LV SPI110LV XDS510PP SPI515, SPI525, XDS510 XDS510PP

    STM32F103RB

    Abstract: con20ap digital photo frame STM32F103RBT6 con20A 16-pin JTAG CONNECTOR PC14-OSC32-IN iphone connector FAT16 PA10
    Text: STEVAL-CCM001V1 Digital photo frame demonstration board based on the STM32F103RB microcontroller Data Brief Features • 320 x 240 resolution TFT 2.4" diagonally interfaced through SPI2 ■ Micro SD card interfaced through SPI1 ■ Mini USB type-B connector


    Original     		PDF STEVAL-CCM001V1 STM32F103RB con20ap digital photo frame STM32F103RBT6 con20A 16-pin JTAG CONNECTOR PC14-OSC32-IN iphone connector FAT16 PA10

    TRANSISTOR 15n60c3

    Abstract: No abstract text available
    Text: SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP15N60C3, SPI15N60C3 SPA15N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 SPP15N60C3 TRANSISTOR 15n60c3

    16N50C3

    Abstract: No abstract text available
    Text: SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-T220-3-31 PG-TO262 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP16N50C3 SPI16N50C3, SPA16N50C3 P-TO220-3-31 PG-T220-3-31 PG-TO262 PG-TO220-3-1 P-TO220-3-1 PG-TO-220-3-31: SPP16N50C3 16N50C3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary  Worldwide best R DS on in TO 220 VDS @ Tjmax 650 V  Ultra low gate charge


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 P-TO220-3-1

    11n60c3

    Abstract: 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPA11N60C3 SPD06S60 transistor 11n60c3
    Text: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPD06S60 transistor 11n60c3

    11N60S5

    Abstract: 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5
    Text: SPI11N60S5 SPP11N60S5, SPB11N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38 Ω • Optimized capacitances


    Original     		PDF SPI11N60S5 SPP11N60S5, SPB11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 Q67040-S4198 11N60S5 11N60S5 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5

    smd diode marking 78A

    Abstract: No abstract text available
    Text: SPI10N10 SPP10N10 SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated VDS 100 R DS on 170 m ID 10.3 A PG-TO262-3-1 V PG-TO220-3-1  dv/dt rated Type SPP10N10 Package Ordering Code


    Original     		PDF SPI10N10 SPP10N10 PG-TO262-3-1 PG-TO220-3-1 SPP10N10 SPI10N10 PG-TO220-3-1 Q67042-S4118 PG-TO262-3-1 Q67042-S4120 smd diode marking 78A

    11n60c3

    Abstract: SPA11N60C3E8185 11N60C SPA11N60C3 equivalent SPA11N60C3 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3
    Text: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original     		PDF SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3 SPA11N60C3E8185 11N60C SPA11N60C3 equivalent 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3

    Untitled

    Abstract: No abstract text available
    Text: mikromedia for dsPIC33 - pinout 5V power supply Reference Ground AN10 AN2/SS1/CN4 AN3/CN5 AN4/CN6 AN5/CN7 AN8 AN9 AN20/INT1 AN21/INT2 INT3 INT4 PGEC1/AN6/OCFA PGED1/AN7 SCK1/INT0 SDI1 SPI1 SDO1 COFS C2RX IC3 SCK2/CN8 SDI2/CN9 SPI2 SDO2/CN10 3.3V power supply


    Original     		PDF dsPIC33Â AN20/INT1 AN21/INT2 SDO2/CN10 OC5/CN13 OC6/CN14 IC7/U1CTS/CN20 IC8/U1RTS/CN21 OC7/CN15 AN17/T3CK/T6CK

    10N10L

    Abstract: Q67042-S4162 TRANSISTOR SMD MARKING CODE 42 Q67042-S4163 SPI10N10L SPP10N10L
    Text: SPI10N10L SPP10N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 100 RDS on 154 m ID 10.3 A PG-TO262-3-1 Type Package Ordering Code Marking


    Original     		PDF SPI10N10L SPP10N10L PG-TO262-3-1 PG-TO220-3-1 Q67042-S4163 10N10L 10N10L Q67042-S4162 TRANSISTOR SMD MARKING CODE 42 Q67042-S4163 SPI10N10L SPP10N10L

    12N50C3

    Abstract: TRANSISTOR 12N50C3 12n50c Q67040-S4641 TRANSISTOR SMD MARKING CODE 7A SPB12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 P-TO263-3-2
    Text: SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262 P-TO263-3-2


    Original     		PDF SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 P-TO220-3-31 P-TO262 P-TO263-3-2 P-TO220-3-1 12N50C3 TRANSISTOR 12N50C3 12n50c Q67040-S4641 TRANSISTOR SMD MARKING CODE 7A SPB12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 P-TO263-3-2

    SF1603

    Abstract: SF1601 SF1602 SF1604 t03n
    Text: TAIWAN S EM ICO NDUC TOR CO I • flû3SS4b DGDOOÛ'ï S ■ 'TZ'03''/~7 SPI101 mm SPI SEM il s TSC 16.0 AMP SUPER FAST RECTIFIERS VO LTAG E RANGE 5 0 to 2 0 0 Volts CURRENT 16,0 Am peres T O -2 2 0 .412 3 B ^ ±.2 180 10.5) H O L E THRU<,4-6¡ M A X ./ T


    OCR Scan     		PDF T0-220 MIL-STD-202, O-220 PIN30 SF1603 SF1601 SF1602 SF1604 t03n