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    SPF2086 Search Results

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    SPF2086 Price and Stock

    SIRENZA MICRODEVICES INC SPF2086TZ

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    Bristol Electronics SPF2086TZ 17
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    SIRENZA MICRODEVICES INC SPF2086TKZ

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    Bristol Electronics SPF2086TKZ 15
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    Others SPF2086TK

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    Quest Components SPF2086TK 28
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    Vishay Electro-Films SPF208675-01A

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    ES Components SPF208675-01A
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    SPF2086 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPF-2086 Sirenza Microdevices 0.1-12 GHz, Low Noise PHEMT GaAS FET Original PDF
    SPF2086 Sirenza Microdevices Low Noise PHEMT GaAs FET Scan PDF
    SPF-2086T Sirenza Microdevices Low Noise pHEMT GaAs FET 0.1-12 GHz Operation Original PDF
    SPF-2086T Sirenza Microdevices Low Noise pHEMT GaAs FET 0.1 - 12 GHz Operation Original PDF
    SPF-2086T Stanford Microdevices 0.1 GHz - 12 GHz low noise PHEMT GaAs FET Original PDF
    SPF-2086TK RFMD Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC TRANS PHEMT 6GHZ SOT-86 Original PDF
    SPF-2086TK Sirenza Microdevices RF FETs, Discrete Semiconductor Products, IC TRANS PHEMT 6GHZ SOT-86 Original PDF
    SPF-2086TK Sirenza Microdevices Low Noise pHEMT GaAs FET 0.1 - 6 GHz Operation Original PDF
    SPF-2086TK Stanford Microdevices 0.1 GHz - 4 GHz low noise PHEMT GaAs FET Original PDF

    SPF2086 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SPF-2086T

    Abstract: spf 557 sirenza LNA sirenza fet
    Text: Preliminary SPF-2086T Product Description Low Noise pHEMT GaAs FET Sirenza Microdevices’ SPF-2086T is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At


    Original     		PDF SPF-2086T SPF-2086T EDS-101189 spf 557 sirenza LNA sirenza fet

    phemt Gh

    Abstract: No abstract text available
    Text: Preliminary SPF-2086T Product Description Low Noise pHEMT GaAs FET Sirenza Microdevices’ SPF-2086T is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At


    Original     		PDF SPF-2086T SPF-2086T EDS-101189 phemt Gh

    spf 557

    Abstract: SPF-2086TK SPF2086 SPF2086TK SPF 775 SPF-2086 sirenza fet
    Text: SPF-2086TK Product Description Low Noise pHEMT GaAs FET Sirenza Microdevices’ SPF-2086TK is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At


    Original     		PDF SPF-2086TK SPF-2086TK EDS-101225 spf 557 SPF2086 SPF2086TK SPF 775 SPF-2086 sirenza fet

    14241 FET

    Abstract: SPF-2086TK SPF2086TK
    Text: Preliminary SPF-2086TK Product Description Stanford Microdevices’ SPF-2086TK is a high performance PHEMT Gallium Arsenide FET utilitzing 0.25 micron long by 300 micron wide Schottky barrier gates. This device is ideally biased at Vds=3V and Id=20mA for lowest


    Original     		PDF SPF-2086TK SPF-2086TK EDS-101225 14241 FET SPF2086TK

    SPF-2086

    Abstract: 175C 2-18 GHz Low Noise Gallium Arsenide FET SPF2086
    Text: Product Description SPF-2086 Stanford Microdevices’ SPF-2086 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 0.1-12 GHz, Low Noise PHEMT GaAs FET 1dB output power is +21dBm at 5V and 50mA. This device


    Original     		PDF SPF-2086 SPF-2086 21dBm 100mW 175C 2-18 GHz Low Noise Gallium Arsenide FET SPF2086

    SPF-2086TKZ

    Abstract: spf2086tkz SPF-2086TKZ applications 54-101 SPF-2086tk SPF2086TK hbt sot-86
    Text: SPF-2086TKZ SPF-2086TKZ Low Noise pHEMT GaAs FET 0.1 GHz to 12 GHz Operation LOW NOISE pHEMT GaAs FET 0.1 GHz to 12 GHz OPERATION NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: SOT-86 Product Description Features Si BiCMOS SiGe HBT 20 10


    Original     		PDF SPF-2086TKZ OT-86 EDS-101225 SPF-2086TKZ spf2086tkz SPF-2086TKZ applications 54-101 SPF-2086tk SPF2086TK hbt sot-86

    spf 557

    Abstract: SPF-2086T SPF2086T sirenza fet
    Text: SPF-2086T Product Description Low Noise pHEMT GaAs FET Sirenza Microdevices’ SPF-2086T is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At


    Original     		PDF SPF-2086T SPF-2086T EDS-101189 spf 557 SPF2086T sirenza fet

    SPF2086TK

    Abstract: No abstract text available
    Text: Preliminary SPF-2086TK Product Description Stanford Microdevices’ SPF-2086TK is a high performance PHEMT Gallium Arsenide FET utilitzing 0.25 micron long by 300 micron wide Schottky barrier gates. This device is ideally biased at Vds=3V and Id=20mA for lowest


    Original     		PDF SPF-2086TK SPF-2086TK EDS-101225 SPF2086TK

    SPF-2086TK

    Abstract: SPF2086TK sirenza fet
    Text: Preliminary SPF-2086TK Product Description Low Noise pHEMT GaAs FET Sirenza Microdevices’ SPF-2086TK is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At


    Original     		PDF SPF-2086TK SPF-2086TK EDS-101225 SPF2086TK sirenza fet

    SPF-2086T

    Abstract: sirenza fet spf 557
    Text: SPF-2086T Product Description Low Noise pHEMT GaAs FET Sirenza Microdevices’ SPF-2086T is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At


    Original     		PDF SPF-2086T SPF-2086T EDS-101189 sirenza fet spf 557

    SPF-2086T

    Abstract: SPF-2086
    Text: Preliminary SPF-2086T Product Description Stanford Microdevices’ SPF-2086T is a high performance PHEMT Gallium Arsenide FET utilitzing 0.25 micron long by 300 micron wide Schottky barrier gates. This device is ideally biased at Vds=3V and Id=20mA for lowest


    Original     		PDF SPF-2086T SPF-2086T EDS-101189 SPF-2086

    SPF2086TK

    Abstract: No abstract text available
    Text: ô ta, îîYices -ï SPF-2086TK 0.1-4 GHz Low Noise PHEMT GaAs FET Absolute Maximum Ratings at 25C Parameter Absolute Maximum Drain-Source Voltage Vds +7V Gate-Source Voltage (Vgs) -7V Drain Current (Ids) Idss Forward Gate Current (Igst) 10mA RF Input Power (Pin)


    OCR Scan     		PDF SPF-2086TK-TR1 SPF-2086TK 100mW 400mW Rn/50 SPF2086TK

    spf 2086

    Abstract: SPF-2086
    Text: Product Description SPF-2086 Stanford M icrodevices’ SPF-2086 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 0.1-12 GHz, Low Noise PHEMT GaAs FET 1dB output power is +21 dBm at 5V and 50mA. This device


    OCR Scan     		PDF SPF-2086 100mW SPF-2086 sSs22s| spf 2086

    SPF-2298

    Abstract: SHF-0185
    Text: Thermal Data Part Rth,typ Number deg C\W SHF-0100D 61.2 SHF-0184 81.2 SHF-0185 81.2 SHF-0186 92.1 SHF-0198 65.5 SHF-0200D 31.2 SHF-0298 35.5 SHF-0500D 15.7 SHF-0598 19.8 SHF-1000D 7.9 SHF-1099 10.4 SPF-2086 298.0 SPF-2098 268.0 SPF-2298 136.0 SMM-008 60.0


    OCR Scan     		PDF SHF-0100D SHF-0184 SHF-0185 SHF-0186 SHF-0198 SHF-0200D SHF-0298 SHF-0500D SHF-0598 SHF-1000D SPF-2298

    Untitled

    Abstract: No abstract text available
    Text: gH Stanford Microdevices Product Description SPF-2086 Stanford M icrodevices’ SPF-2086 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 0.1-12 GHz, Low Noise PHEMT G a As FET


    OCR Scan     		PDF SPF-2086 100mW SPF-2086

    SNA-486

    Abstract: SPF-1576 SPF-2076 Z27D SPF-1676 sna-186 SPDT FETs
    Text: Table of Contents Model Description SPF-284 SPF-484 SPF-684 SPF-884 SPF-1576 SPF-1676 Low-Noise GaAs FETs 1-2GHz 0.8dB NF r 2GHz 1-2GHz 0.5dB NF ® 2G H z 2-!2G H z0.7dB NF ¡34G H z 2-12GHz 0.5dB NF {n}4GHz 2-26GHz 0.6dB NF ® 12GHz 2-26G H z0.5dB N F ® 12G H z


    OCR Scan     		PDF SPF-284 SPF-484 SPF-684 SPF-884 SPF-1576 SPF-1676 SPF-2076 SPF-2098 SPF-2298 SPF-2086 SNA-486 Z27D sna-186 SPDT FETs

    Untitled

    Abstract: No abstract text available
    Text: SPF-2086, -2086K 0.1-12GHz Medium Power PHEMT G aAs FET October, 1995 Features - High Associated Gain: 17dB @ 2GHz, 10dB @ 12GHz - 0.2dB Noise Figure @ 2GHz, 0.9dB NF @ 12GHz 86 Plastic Package - +21 dBm Output Power at P1dB - 50% Power Added Efficiency 0.51 0 .02 0


    OCR Scan     		PDF SPF-2086, -2086K 1-12GHz 12GHz 21dBm 100mW 400mW