1N5818
Abstract: 1N914 LT1576 LT1576C LT1576CS8 LT1576CS8-SYNC LT1576I LT1576IS8
Text: Final Electrical Specifications LT1576 1.5A, 200kHz Step-Down Switching Regulator February 1999 U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ The LT 1576 is a 200kHz monolithic buck mode switching regulator. A 1.5A switch is included on the die along with
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LT1576
200kHz
LT1371
500kHz
LT1372/LT1377
LT1435/LT1436
LT1676/LT1776
1N5818
1N914
LT1576
LT1576C
LT1576CS8
LT1576CS8-SYNC
LT1576I
LT1576IS8
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1N5818
Abstract: 1N914 LT1507 LT1578 LT1578C LT1578CS8 LT1578I LT1578IS8
Text: Final Electrical Specifications LT1578 1.5A, 200kHz Step-Down Switching Regulator U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1578 is a 200kHz monolithic buck mode switching regulator. A 1.5A switch is included on the die along with
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LT1578
200kHz
LT1578
LT1507
400kHz
LTC1622
500kHz,
LT1676/LT1776
1N5818
1N914
LT1578C
LT1578CS8
LT1578I
LT1578IS8
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BT136-600E equivalent
Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
Text: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.
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10TQ045S
11DQ03
11DQ04
11EQ03
11EQ04
11EQS
15DF4
1N3645
BT136-600E equivalent
D2499 equivalent
D1878 equivalent
BT139-600 equivalent
C4927
d1577
d1554
C5386
c5129
e13005 equivalent
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U840 diode motorola
Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in
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DL151/D
Nov-2000
r14525
U840 diode motorola
motorola u860 diode
DIODE u1560
b2045 aka
u1560 DIODE
u860 diode
u1560
diode U3J
U820 diode
fast recovery diode ses5001
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Untitled
Abstract: No abstract text available
Text: 1N5818 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
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1N5818
DO-204AL
1N5818
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-1N5818,
VS-1N5818-M3
DO-204AL
2002/95/EC
DO-41)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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diode 1n5818
Abstract: No abstract text available
Text: VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-1N5818,
VS-1N5818-M3
DO-204AL
DO-41)
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
diode 1n5818
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Untitled
Abstract: No abstract text available
Text: VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-1N5818,
VS-1N5818-M3
DO-204AL
2002/95/EC
DO-41)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-1N5818,
VS-1N5818-M3
DO-204AL
2002/95/EC
DO-41)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5818 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
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1N5818
DO-204AL
1N5818
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 www.vishay.com Vishay General Semiconductor Schottky Barrier Plastic Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation
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1N5817,
1N5818,
1N5819
22-B106
DO-204AL
DO-41)
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20590 rev. B 11/04 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/Features The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies,
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PD-20590
1N5818
1N5819
1N5818/
1N5819
08-Mar-07
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datasheets diode 1n5818
Abstract: 1N5818 1N5819 1N581X DO-204AL B1104
Text: Bulletin PD-20590 rev. B 11/04 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/Features The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies,
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PD-20590
1N5818
1N5819
1N5818/
1N5819
12-Mar-07
datasheets diode 1n5818
1N5818
1N581X
DO-204AL
B1104
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Untitled
Abstract: No abstract text available
Text: VS-1N5818, VS-1N5818-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical
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VS-1N5818,
VS-1N5818-M3
DO-204AL
DO-41)
2002/95/EC
11-Mar-11
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1N5817
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
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Untitled
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
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1N5817
Abstract: 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG 1N5819 Equivalent for 1N5819
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
1N5817G
1N5817RL
1N5817RLG
1N5818
1N5818G
1N5818RL
1N5818RLG
Equivalent for 1N5819
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"Power Diode"
Abstract: 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS 10 Ampere Schottky bridge 1N5817 diode FULL WAVE RECTIFIER CIRCUITS Full wave rectifier datasheet 1N5818RLG 1N5819 1N5817 1N5817G
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
"Power Diode"
5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
10 Ampere Schottky bridge
1N5817 diode
FULL WAVE RECTIFIER CIRCUITS
Full wave rectifier datasheet
1N5818RLG
1N5817G
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Untitled
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
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1n5819 equivalent
Abstract: 1N5817-19 1N5817 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
BRD8011/D.
DO-41
1n5819 equivalent
1N5817-19
1N5817G
1N5817RL
1N5817RLG
1N5818
1N5818G
1N5818RL
1N5818RLG
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1N5818
Abstract: datasheets diode 1n5818 1N5819 1N581X DO-204AL
Text: Bulletin PD-20590 rev. A 05/02 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline IFSM @ tp = 5 µs sine 225
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PD-20590
1N5818
1N5819
1N5818/
1N5819
1N5818,
1N5818
datasheets diode 1n5818
1N581X
DO-204AL
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1N5818
Abstract: 1N5819 1N581X DO-204AL b1104
Text: Bulletin PD-20590 rev. B 11/04 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/Features The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies,
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PD-20590
1N5818
1N5819
1N5818/
1N5819
1N5818,
1N5818
1N581X
DO-204AL
b1104
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1N5818
Abstract: DO-204AL
Text: 1N5818 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
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1N5818
DO-204AL
1N5818
18-Jul-08
DO-204AL
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Untitled
Abstract: No abstract text available
Text: 1N5818/1N5819 Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline RoHS • High frequency operation COMPLIANT • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for
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1N5818/1N5819
DO-204AL
1N5818/1N5819
18-Jul-08
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