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    SPD30N03S2L-20 G Search Results

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    SPD30N03S2L-20 G Price and Stock

    Infineon Technologies AG SPD30N03S2L20GBTMA1

    MOSFET N-CH 30V 30A TO252-3
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    DigiKey SPD30N03S2L20GBTMA1 Reel
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    Rochester Electronics SPD30N03S2L20GBTMA1 28,367 1
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    Rochester Electronics LLC SPD30N03S2L20GBTMA1

    MOSFET N-CH 30V 30A TO252-3
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    DigiKey SPD30N03S2L20GBTMA1 Bulk 904
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    SPD30N03S2L-20 G Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SPD30N03S2L-20G Infineon Technologies N-CHANNEL POWER MOSFET Original PDF
    SPD30N03S2L-20 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 20.0 mOhm; RDS (on) (max) (@4.5V): 31.0 mOhm; ID (max): 30.0 A; Original PDF
    SPD30N03S2L20GBTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 30A TO252-3 Original PDF

    SPD30N03S2L-20 G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N03L20

    Abstract: No abstract text available
    Text: SPD30N03S2L-20 OptiMOS Power-Transistor Product Summary Feature VDS 30 V •Enhancement mode RDS on 20 mΩ •Logic Level ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO252 -3-11 •Superior thermal resistance •175°C operating temperature


    Original     		PDF SPD30N03S2L-20 SPD30N03S2L-20 Q67042-S4077 2N03L20 BSPD30N03S2L-20, 2N03L20

    2N03L20

    Abstract: BSPD30N03S2L-20 SPD30N03S2L-20
    Text: SPD30N03S2L-20 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 30 V RDS on 20 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) •=175°C operating temperature P-TO252-3-1 • Avalanche rated


    Original     		PDF SPD30N03S2L-20 P-TO252-3-1 P-TO252-3-1 Q67042-S4077 2N03L20 BSPD30N03S2L-20, SPD30N03S2L-20 2N03L20 BSPD30N03S2L-20

    Untitled

    Abstract: No abstract text available
    Text: SPD30N03S2L-20 G Opt iMOS  Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 20 mΩ • Logic Level ID 30 A PG- TO252 -3 • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature


    Original     		PDF SPD30N03S2L-20 SPD30N03S2L-20G 2N03L20 SPD30N03S2L-20 PG-TO252-3

    2N03L20

    Abstract: 2n03l SPD30N03S2L-20 Q67042-S4077 D18A ANPS071E BSPD30N03S2L-20
    Text: SPD30N03S2L-20 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 20 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) P- TO252 -3-11 • Superior thermal resistance • 175°C operating temperature


    Original     		PDF SPD30N03S2L-20 Q67042-S4077 2N03L20 BSPD30N03S2L-20, SPD30N03S2L-20 2N03L20 2n03l Q67042-S4077 D18A ANPS071E BSPD30N03S2L-20

    2N03L20

    Abstract: 2n03l SPD30N03S2L-20 G TO252 thermal character ANPS071E SPD30N03S2L-20 SPD30N03S2L-20G TO252-3 rthjc
    Text: SPD30N03S2L-20 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode R DS on 20 mΩ • Logic Level ID 30 A • Excellent Gate Charge x RDS(on) product (FOM) PG- TO252 -3 • Superior thermal resistance • 175°C operating temperature


    Original     		PDF SPD30N03S2L-20 SPD30N03S2L-20G 2N03L20 SPD30N03S2L-20 PG-TO252-3 2N03L20 2n03l SPD30N03S2L-20 G TO252 thermal character ANPS071E TO252-3 rthjc

    2N03L20

    Abstract: ANPS071E SPD30N03S2L-20 Q67042-S4077
    Text: SPD30N03S2L-20 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 20 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) P- TO252 -3-11 • Superior thermal resistance • 175°C operating temperature


    Original     		PDF SPD30N03S2L-20 Q67042-S4077 2N03L20 PG-TO252-3 2N03L20 ANPS071E SPD30N03S2L-20 Q67042-S4077