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    SPD08N05L Search Results

    SPD08N05L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SPD08N05L Infineon Technologies SIPMOS Power-Transistor Original PDF
    SPD08N05L Siemens Original PDF
    SPD08N05L Siemens Original PDF
    SPD08N05L Toshiba Power MOSFETs Cross Reference Guide Original PDF

    SPD08N05L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SPD08N05L

    Abstract: SPU08N05L P-TO252
    Text: SPD08N05L SPU08N05L Preliminary data SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Type VDS ID RDS on Package Ordering Code SPD08N05L 55 V 8.4 A 0.18 Ω P-TO252 Q67000-. . . . - . .


    Original     		PDF SPD08N05L SPU08N05L P-TO252 Q67000-. P-TO251 16/Oct/1997 SPD08N05L SPU08N05L P-TO252

    08n05

    Abstract: 08N05L Q67040-S4182-A2 P-TO252 Q67040-S4134 SPD08N05L SPU08N05L
    Text: SPD 08N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 55 V • Drain-Source on-state resistance RDS on 0.1 Ω Continuous drain current ID 8.4 A Enhancement mode • Avalanche rated • Logic Level • dv/dt rated


    Original     		PDF 08N05L SPD08N05L P-TO252 Q67040-S4134 P-TO251 SPU08N05L Q67040-S4182-A2 08n05 08N05L P-TO252 Q67040-S4134 SPD08N05L SPU08N05L

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    Untitled

    Abstract: No abstract text available
    Text: — SPD 08N05L I nf i ne on technologies im p f° v e d SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage VDS 55 • Enhancement mode Drain-Source on-state resistance ^DS on 0.1 Q • Avalanche rated Continuous drain current


    OCR Scan     		PDF 08N05L P-T0252 Q67040-S4134 P-T0251 SPD08N05L SPU08N05L Q67040-S4182-A2 S35bQ5 Q133777 SQT-89

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S