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    SPA07N Search Results

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    SPA07N Price and Stock

    Infineon Technologies AG SPA07N60C3XKSA1

    MOSFET N-CH 650V 7.3A TO220-FP
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    DigiKey SPA07N60C3XKSA1 Tube 462 1
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    Verical SPA07N60C3XKSA1 128 8
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    Arrow Electronics SPA07N60C3XKSA1 130 15 Weeks 1
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    Newark SPA07N60C3XKSA1 Bulk 530 1
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    Rochester Electronics SPA07N60C3XKSA1 100 1
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    Chip1Stop SPA07N60C3XKSA1 240
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    EBV Elektronik SPA07N60C3XKSA1 16 Weeks 500
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    Rochester Electronics LLC SPA07N60C2

    N-CHANNEL POWER MOSFET
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    DigiKey SPA07N60C2 Bulk 495
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    Infineon Technologies AG SPA07N65C3XKSA1

    MOSFET N-CH 650V 7.3A TO220-FP
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    Rochester Electronics SPA07N65C3XKSA1 203 1
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    Infineon Technologies AG SPA07N60CFDXKSA1

    MOSFET N-CH 650V 6.6A TO220-FP
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    Rochester Electronics SPA07N60CFDXKSA1 196 1
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    Infineon Technologies AG SPA07N60C2

    Power Transister, Cool MOS, N-CH 650V 7.3A 3-Pin TO-220 Tube - Bulk (Alt: SPA07N60C2)
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    Avnet Americas SPA07N60C2 Bulk 4 Weeks 596
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    Rochester Electronics SPA07N60C2 1,403 1
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    Find more SPA07N price and stock on Findchips.com

    SPA07N Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPA07N60C2 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220FP, RDSon=0.60 ?, 4.3A Original PDF
    SPA07N60C2 Infineon Technologies Cool MOS Power Amp., 650V 7.3A 32W, MOS-FET N-Channel enhanced Original PDF
    SPA07N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220FP, RDSon=0.60 ?, 4.3A Original PDF
    SPA07N60C3 Infineon Technologies Cool MOS Power Amp., 650V 7.3A 32W, MOS-FET N-Channel enhanced Original PDF
    SPA07N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPA07N60C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 7.3A TO-220 Original PDF
    SPA07N60CFD Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 600.0 V; Package: TO-220 FullPAK; RDS(ON) @ TJ=25°C VGS=10: 700.0 mOhm; ID(max) @ TC=25°C: 6.6 A; IDpuls (max): 17.0 A; Original PDF
    SPA07N60CFDXKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 6.6A TO220-FP Original PDF
    SPA07N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPA07N65C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPA07N65C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 650.0 V; Package: TO-220 FullPAK; RDS(ON) @ TJ=25°C VGS=10: 600.0 mOhm; ID(max) @ TC=25°C: 7.3 A; IDpuls (max): 21.9 A; Original PDF
    SPA07N65C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 7.3A TO-220 Original PDF

    SPA07N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    07N60

    Abstract: 07N60C3
    Text: Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60 07N60C3

    07N60C2

    Abstract: s4309 SPA07N60C2 SPB07N60C2 SPP07N60C2 Q67040-S4310 TRANSISTOR SMD MARKING CODE GFs 07n60c
    Text: Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.6 Ω • Periodic avalanche rated ID 7.3 A • Extreme dv/dt rated


    Original     		PDF SPP07N60C2, SPB07N60C2 SPA07N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP07N60C2 Q67040-S4309 07N60C2 s4309 SPA07N60C2 SPB07N60C2 SPP07N60C2 Q67040-S4310 TRANSISTOR SMD MARKING CODE GFs 07n60c

    07n65c3

    Abstract: PG-TO220-3 SPP07N65C3 SPA07N65C3 PG-TO262-3 PG-TO-220-3 SPI07N65C3 smd diode 46A
    Text: SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3 V DS 650 V RDS on 0.6 Ω ID 7.3 A PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO220-3 PG-TO262-3-1 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3 SPP07N65C3 07n65c3 PG-TO220-3 SPP07N65C3 SPA07N65C3 PG-TO262-3 PG-TO-220-3 SPI07N65C3 smd diode 46A

    smd diode marking G12

    Abstract: SPA07N60C3
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 P-TO220-3-1 PG-TO-220-3-31: SPP07N60C3 smd diode marking G12

    07N60C3

    Abstract: 07n60c
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 07n60c

    07N60C3

    Abstract: No abstract text available
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 07N60C3

    07n60c3

    Abstract: 07N60C3 SMD
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07n60c3 07N60C3 SMD

    SPA07N60C3

    Abstract: No abstract text available
    Text: SPA07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.6 Ω • Extreme dv/dt rated


    Original     		PDF SPA07N60C3 P-TO220-3-31 07N60C3 P-TO220-3-31 Q67040-S4409 SPA07N60C3

    07N60CFD

    Abstract: JESD22 PG-TO220-3-31 SPA07N60CFD infineon s66
    Text: SPA07N60CFD CoolMOSTM Power Transistor Product Summary Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge V DS @Tjmax 650 V R DS on ,max 0.7 Ω ID 6.6 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220 FP


    Original     		PDF SPA07N60CFD PG-TO220 PG-TO220FP 07N60CFD 07N60CFD JESD22 PG-TO220-3-31 SPA07N60CFD infineon s66

    07N60C3

    Abstract: SPB07N60C3 07n60c transistor 07n60c3 SPA07N60C3 SPI07N60C3 SPP07N60C3
    Text: Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 SPB07N60C3 07n60c transistor 07n60c3 SPA07N60C3 SPI07N60C3 SPP07N60C3

    07n60c3

    Abstract: 07n60c SPB07N60C3 SPA07N60C3 SPI07N60C3 SPP07N60C3 smd transistor marking G12
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07n60c3 07n60c SPB07N60C3 SPA07N60C3 SPI07N60C3 SPP07N60C3 smd transistor marking G12

    07N60C3

    Abstract: 07N60C3 equivalent 07N60 PG-TO220 SPA07N60C3 SPI07N60C3 PG-TO220-3 SPP07N60C3
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 07N60C3 07N60C3 equivalent 07N60 PG-TO220 SPA07N60C3 SPI07N60C3 PG-TO220-3 SPP07N60C3

    Untitled

    Abstract: No abstract text available
    Text: SPP07N65C3, SPI07N65C3 SPA07N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated V DS 650 V RDS on 0.6 Ω ID 7.3 A PG-TO220-3-31 PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO220-3-31 PG-TO262-3-1 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: SPP07N65C3

    07n60c3

    Abstract: No abstract text available
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 07n60c3

    07N60C3

    Abstract: 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60C3 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.6 Ω •=Periodic avalanche rated ID


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3

    07n65c3

    Abstract: to220 pcb footprint PG-TO-220-3 PG-TO220-3-31 SPA07N65C3 SPI07N65C3 SPP07N65C3
    Text: SPP07N65C3, SPI07N65C3 SPA07N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated V DS 650 V RDS on 0.6 Ω ID 7.3 A PG-TO220-3-31 PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N65C3, SPI07N65C3 SPA07N65C3 PG-TO220-3-31 PG-TO262-3-1 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: SPP07N65C3 07n65c3 to220 pcb footprint PG-TO-220-3 SPA07N65C3 SPI07N65C3 SPP07N65C3

    SPI07N60C3 SMD

    Abstract: No abstract text available
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220 P-TO220-3-1 PG-TO-220-3-31: SPP07N60C3 SPI07N60C3 SMD

    07n65c3

    Abstract: No abstract text available
    Text: SPP07N65C3, SPI07N65C3 SPA07N65C3 Cool MOS Power Transistor Feature VDS @ Tjmax 730 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP07N65C3, SPI07N65C3 SPA07N65C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 P-TO220-3-1 PG-TO-220-3-31: SPP07N65C3 07n65c3

    07n65c3

    Abstract: 07n65
    Text: SPP07N65C3, SPI07N65C3 SPA07N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated V DS 650 V RDS on 0.6 Ω ID 7.3 A PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP07N65C3, SPI07N65C3 SPA07N65C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 P-TO220-3-1 PG-TO-220-3-31: SPP07N65C3 07n65c3 07n65

    07N60C3

    Abstract: PG-TO220-3-31
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 P-TO220-3-1 PG-TO-220-3-31: 07N60C3

    Untitled

    Abstract: No abstract text available
    Text: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP • Periodic avalanche rated PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31

    Untitled

    Abstract: No abstract text available
    Text: SPP07N65C3, SPI07N65C3 SPA07N65C3 Cool MOS Power Transistor Feature VDS @ Tjmax 730 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP07N65C3, SPI07N65C3 SPA07N65C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 P-TO220-3-1 PG-TO-220-3-31: SPP07N65C3

    07N60C2

    Abstract: 07n60
    Text: Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated • Extreme dv/dt rated


    Original     		PDF SPP07N60C2, SPB07N60C2 SPA07N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP07N60C2 07N60C2 07n60