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    SP 1982 TRANSISTOR Search Results

    SP 1982 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SP 1982 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sy 320 diode

    Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
    Text: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren


    OCR Scan     		PDF

    MAB8048HP

    Abstract: 16x8 dual ram intel 8048h PC SOT-145 MAB8035HL MAB8048H P20-P23 sp 1982 transistor sot145
    Text: M A B 8048H y S IN G L E -C H IP 8 -B IT v M IC R O C O M P U T E R DESCRIPTION The MAB8048H fam ily o f single-chip 8-bit microcomputers are fabricated in H-MOS. Two interchangeable pin compatible versions are available: • The MAB8048H w ith resident mask-programmed ROM,


    OCR Scan     		PDF MAB8048H MAB8048H MAB8035HL MAB8048M 40-LEAD OT-88B) MAB8048HP 16x8 dual ram intel 8048h PC SOT-145 P20-P23 sp 1982 transistor sot145

    transistor motorola 351

    Abstract: 43b transistor Transistor 43B ANSI S 2.19
    Text: M O TO R O L A O rder th is docum ent by BUD43B/D SEMICONDUCTOR TECHNICAL DATA BUD43B Product Preview POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS SWITCHMODE NPN Silicon Planar Pow er Transistor The BUD43B has an application specific state-of-the-art die designed for use in


    OCR Scan     		PDF BUD43B/D BUD43B BUD43B 2PHX34546C-0 transistor motorola 351 43b transistor Transistor 43B ANSI S 2.19

    4N25 4N25A 4N26 4N27 4N28

    Abstract: No abstract text available
    Text: QT Optoelectronics SEMICONDUCTOR TECHNICAL DATA TO VDE UL & CSA •ì SET SEMKO DEMKO NEMKO BABT Glob al Optoi solator 6-Pin DIP Optoisolators Transistor Output [CTR = 20% Min] The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor


    OCR Scan     		PDF 4N25/A, 4N25A 0884requirements, 4N25/D 4N25 4N25A 4N26 4N27 4N28

    MPS911

    Abstract: IL4 SOT23 73DG3 TO-236AA MMBR911 MXR911
    Text: ,MOTOROLA SC -CXSTRS/R F} •mm. 71 DE | t.3fci72Sti 0073002 2 T-5/- i 7 o MOTOROLA S E M I C O N D U C T O R TECHNICAL DATA S V S P S 9 1 1 UPM S ilicon High Frequency IV 1 X R 9 1 1 Transistors IV 8 E V 1 B R 9 1 1 . . . designed for low noise, wide dynamic range front-end amplifiers and low-noise


    OCR Scan     		PDF A/500 MMBR911 MPS911 MXR911 MPS911 IL4 SOT23 73DG3 TO-236AA MXR911

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N38 4N38A 6-Pin D IP O p to iso la to rs Transistor Output T h e se devices co n sist o f a galliu m arse nid e infrared em itting d iod e optically coupled to a m on olith ic silicon p ho to tran sistor detector. •


    OCR Scan     		PDF IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, 0X120

    KAG TRANSISTOR

    Abstract: No abstract text available
    Text: MOTOROLA IRF440 IRF441 TECHNICAL DATA IM-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V DSS rDS on •d IRF440 500 V 0.85 n 8.0 A T h e s e T M O S P o w e r FETs are d es ig n e d fo r high v o ltag e, high sp e ed p o w e r s w itch in g a p p licatio n s such as s w itch in g regulators,


    OCR Scan     		PDF IRF440 IRF441 KAG TRANSISTOR

    4N25 6 pin dip optoisolator

    Abstract: 4N25 4N25A VDE0113 VDE0160 VDE0832 VDE0833 4N27 Opto-isolator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 25 4N 25A 4N 26 4N 27 4N 28 6-Pin DIP Optoisolators Transistor Output T h e se d e vices co n sist of a galliu m arse n id e infrared em itting d iod e optically co up led to a m on olith ic silic on p h o to tran sisto r detector.


    OCR Scan     		PDF E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE110b, IEC204/y5\. VDE0113, VDE0160, VDE0832, VDE0833, 4N25 6 pin dip optoisolator 4N25 4N25A VDE0113 VDE0160 VDE0832 VDE0833 4N27 Opto-isolator

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.709A INTERNATIO N AL RECTIFIER I R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ54 SH N -C H A N N E L 60 Volt, 0.027 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Part Number Rectifier’s advanced line of power M O S FE T transistors.


    OCR Scan     		PDF IRFMQ54 IRFM054D IRFM054U O-254 MIL-S-19500 I-284

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier pd-o.usqa IRG4BC30F PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT F eatures • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF IRG4BC30F T0220AB

    169 MHz RF CHIP

    Abstract: motorola rf power transistors mtbf 015 j47 5659065 bipolar transistor s-parameter DIODE 851 MOTOROLA GX-0300-55-22 BD136 MJD47 MRF20060R
    Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M R F20060R M RF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.


    OCR Scan     		PDF MRF20060R/D MRF20060R MRF20060RS Distortion--30 51A-03 MRF20060RS) MRF20060RS 169 MHz RF CHIP motorola rf power transistors mtbf 015 j47 5659065 bipolar transistor s-parameter DIODE 851 MOTOROLA GX-0300-55-22 BD136 MJD47

    2N5039

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N5038/D SEMICONDUCTOR TECHNICAL DATA 2N 5038* 2N5039 NPN Silicon Transistors ‘ Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in sw itching regulators, inverters, w id e -b a n d a m p lifie rs and pow er o s c illa to rs in


    OCR Scan     		PDF 2N5038/D 2N5039 2N5038 O-204AA 2N5039

    BVW56

    Abstract: SMPS CIRCUIT DIAGRAM lg TEA1039
    Text: Ph ilips S e m ic o n d u c to rs Lin ear P rod ucts P ro d u ct sp e cific ation Control circuit for switched-mode power supply TEA1039 G E N E R A L D ESC RIPTIO N The T E A 1 0 3 9 is a b ipo lar integrated c irc u it intended fo r the co n tro l o f a switched-m ode power supply.


    OCR Scan     		PDF TEA1039 TEA1039 BVW56 BVW56 SMPS CIRCUIT DIAGRAM lg

    diode U3j

    Abstract: IRf 447 MOSFET 1RF530 1rf5305 a7x transistor IRF532 MOSFET IRF 531 motorola diode u3j aaBO ON U3J
    Text: MOTOROLA SC MOTOROLA XST RS/R F IM E D I b3b?aSM O OÔ ÎbôS 4 IRF530 1RF531 IRF532 IRF533 •I SEM ICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM OS POWER FIELD EFFECT TRANSISTOR These T M O S Pow er FETs are d esign ed for low voltage, high


    OCR Scan     		PDF IRF530 IRF531 IRF532 IRF533 O-220) diode U3j IRf 447 MOSFET 1RF530 1rf5305 a7x transistor MOSFET IRF 531 motorola diode u3j aaBO ON U3J

    tp5n40

    Abstract: Motorola transistor 388 TO-204AA TIC 160 D M30TR TP5N40E
    Text: b3b725H DDTflSSS HIT bflE D MOTOROLA SC XSTRS/R F MOTOROLA inOTb • SEMICONDUCTOR TECHNICAL DATA MTM5N40 *MTP5N40E Designer's Data Sheet •M otorola Preferred Device Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FETs


    OCR Scan     		PDF b3b725H O-204AA) 97A-01 97A-03 -fUO-30( 97A-03 O-204AE) tp5n40 Motorola transistor 388 TO-204AA TIC 160 D M30TR TP5N40E

    d44vh10

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by D44VH/D SEMICONDUCTOR TECHNICAL DATA NPN D44VH Com plem entary Silicon Power Transistors These com plem entary silicon pow er transistors are designed for h ig h -sp e e d switching applications, such as switching regulators and high frequency inverters.


    OCR Scan     		PDF D44VH/D D44VH D45VH 21A-06 O-220AB d44vh10

    5n05e

    Abstract: mtp45n MTM45N05E
    Text: MOTOROLA • I SEM ICONDUCTOR TECHNICAL DATA M T M 4 5N 0 5E M T P 45N 05E Designer's Data Sheet T M O S IV P o w er Field E ffe c t Transistors N-Channel Enhancement-Mode Silicon Gate T his advanced " E " series o f TMOS p o w e r MOSFETs is designed to w ith s ta n d high


    OCR Scan     		PDF 97A-02 MTM45N05E 21A-04 MTP45N05E 5n05e mtp45n

    MJ11017

    Abstract: darlington power transistor mj11021 MJ11021 Motorola semiconductor mj11018 1N5825 MJ11018 MJ11022 MSD6100 transistor pnp 3015
    Text: MOTOROLA Order this document by MJ11017/D SEMICONDUCTOR TECHNICAL DATA PNP M J11017 Com plem entary Darlington Silicon Power Transistors M J1 1 021* NPN . . . d e sig ned fo r use as ge ne ral pu rpo se am plifiers, low fre q u e n cy sw itch ing and m otor con tro l applications.


    OCR Scan     		PDF MJ11017/D MJ11018, MJ11022, MJ11017 MJ11021 MJ11018 MJ11022 MJ11022 darlington power transistor mj11021 MJ11021 Motorola semiconductor mj11018 1N5825 MSD6100 transistor pnp 3015

    MOC8204

    Abstract: MOC8205 VDE0160 VDE0832 VDE0833
    Text: MOTOROLA S E M IC O N D U C TO R TECHNICAL DATA M O C 8204 M O C 8205 M O C 8206 6 -P in D IP O p t o is o la t o r s Transistor Output . . c o n sist of ga lliu m -a rse n id e infrared em itting d io d e s optically co up led to h igh voltage, silicon, p h o to tra n sisto r detectors in a stan d ard 6-pin D IP package. T h e y are d e sig n e d for


    OCR Scan     		PDF E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE0110b, 30A-Q2 MOC8204 MOC8205 VDE0160 VDE0832 VDE0833

    BU323A

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BU323A/D SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. •


    OCR Scan     		PDF BU323A/D BU323A O-204AA

    MPF910

    Abstract: No abstract text available
    Text: MOTOROLA SEM IC O N D U C T O R MFE910 MPF910 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE TM OS FIELD-EFFECT TRANSISTOR 60 VOLTS T h is T M O S FET is d e sig n e d for high-voltage, h igh -sp e ed sw itch ­ ing applications su c h as line drivers, relay drivers, C M O S logic,


    OCR Scan     		PDF MFE910 MPF910 MPF910

    40N20

    Abstract: No abstract text available
    Text: MO TO R O L A SC X ST RS /R F MOTOROLA bfiE D b 3 b ? B 5 4 DOTflbOfl ET3 • SEMICONDUCTOR ■ TECHNICAL DATA Designer's Data Sheet MTM40N20 Pow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate T M O S P O W E R FET 40 A M P E R E S


    OCR Scan     		PDF MTM40N20 O-204 97A-01 97A-03 40N20

    IRFY9120

    Abstract: diode ED 84 IRFY120 660B IRFV460 ISFV460D TO-257AB
    Text: Data Sheet No. PD-9.660B I3R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFV4BO N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    OCR Scan     		PDF IRFV460 IRFY044IM) O-257AA IRFY120 IRFY130 IRFY140 IRFY240 IRFY340 IRFY430 IRFY440 IRFY9120 diode ED 84 660B IRFV460 ISFV460D TO-257AB

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJ13333/D SEMICONDUCTOR TECHNICAL DATA M J13333 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS The M J13 33 3 tra n sisto r is d e sig n e d for high volta ge , h ig h -s p e e d , po w e r sw itching


    OCR Scan     		PDF MJ13333/D J13333 O-204AA