sy 320 diode
Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
Text: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren
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MAB8048HP
Abstract: 16x8 dual ram intel 8048h PC SOT-145 MAB8035HL MAB8048H P20-P23 sp 1982 transistor sot145
Text: M A B 8048H y S IN G L E -C H IP 8 -B IT v M IC R O C O M P U T E R DESCRIPTION The MAB8048H fam ily o f single-chip 8-bit microcomputers are fabricated in H-MOS. Two interchangeable pin compatible versions are available: • The MAB8048H w ith resident mask-programmed ROM,
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MAB8048H
MAB8048H
MAB8035HL
MAB8048M
40-LEAD
OT-88B)
MAB8048HP
16x8 dual ram
intel 8048h
PC SOT-145
P20-P23
sp 1982 transistor
sot145
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PDF
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transistor motorola 351
Abstract: 43b transistor Transistor 43B ANSI S 2.19
Text: M O TO R O L A O rder th is docum ent by BUD43B/D SEMICONDUCTOR TECHNICAL DATA BUD43B Product Preview POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS SWITCHMODE NPN Silicon Planar Pow er Transistor The BUD43B has an application specific state-of-the-art die designed for use in
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BUD43B/D
BUD43B
BUD43B
2PHX34546C-0
transistor motorola 351
43b transistor
Transistor 43B
ANSI S 2.19
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4N25 4N25A 4N26 4N27 4N28
Abstract: No abstract text available
Text: QT Optoelectronics SEMICONDUCTOR TECHNICAL DATA TO VDE UL & CSA •ì SET SEMKO DEMKO NEMKO BABT Glob al Optoi solator 6-Pin DIP Optoisolators Transistor Output [CTR = 20% Min] The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor
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4N25/A,
4N25A
0884requirements,
4N25/D
4N25 4N25A 4N26 4N27 4N28
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MPS911
Abstract: IL4 SOT23 73DG3 TO-236AA MMBR911 MXR911
Text: ,MOTOROLA SC -CXSTRS/R F} •mm. 71 DE | t.3fci72Sti 0073002 2 T-5/- i 7 o MOTOROLA S E M I C O N D U C T O R TECHNICAL DATA S V S P S 9 1 1 UPM S ilicon High Frequency IV 1 X R 9 1 1 Transistors IV 8 E V 1 B R 9 1 1 . . . designed for low noise, wide dynamic range front-end amplifiers and low-noise
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A/500
MMBR911
MPS911
MXR911
MPS911
IL4 SOT23
73DG3
TO-236AA
MXR911
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N38 4N38A 6-Pin D IP O p to iso la to rs Transistor Output T h e se devices co n sist o f a galliu m arse nid e infrared em itting d iod e optically coupled to a m on olith ic silicon p ho to tran sistor detector. •
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IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
0X120
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PDF
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KAG TRANSISTOR
Abstract: No abstract text available
Text: MOTOROLA IRF440 IRF441 TECHNICAL DATA IM-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V DSS rDS on •d IRF440 500 V 0.85 n 8.0 A T h e s e T M O S P o w e r FETs are d es ig n e d fo r high v o ltag e, high sp e ed p o w e r s w itch in g a p p licatio n s such as s w itch in g regulators,
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IRF440
IRF441
KAG TRANSISTOR
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PDF
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4N25 6 pin dip optoisolator
Abstract: 4N25 4N25A VDE0113 VDE0160 VDE0832 VDE0833 4N27 Opto-isolator
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 25 4N 25A 4N 26 4N 27 4N 28 6-Pin DIP Optoisolators Transistor Output T h e se d e vices co n sist of a galliu m arse n id e infrared em itting d iod e optically co up led to a m on olith ic silic on p h o to tran sisto r detector.
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
IEC204/y5\.
VDE0113,
VDE0160,
VDE0832,
VDE0833,
4N25 6 pin dip optoisolator
4N25
4N25A
VDE0113
VDE0160
VDE0832
VDE0833
4N27 Opto-isolator
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.709A INTERNATIO N AL RECTIFIER I R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ54 SH N -C H A N N E L 60 Volt, 0.027 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Part Number Rectifier’s advanced line of power M O S FE T transistors.
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IRFMQ54
IRFM054D
IRFM054U
O-254
MIL-S-19500
I-284
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PDF
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier pd-o.usqa IRG4BC30F PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT F eatures • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4BC30F
T0220AB
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PDF
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169 MHz RF CHIP
Abstract: motorola rf power transistors mtbf 015 j47 5659065 bipolar transistor s-parameter DIODE 851 MOTOROLA GX-0300-55-22 BD136 MJD47 MRF20060R
Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M R F20060R M RF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.
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MRF20060R/D
MRF20060R
MRF20060RS
Distortion--30
51A-03
MRF20060RS)
MRF20060RS
169 MHz RF CHIP
motorola rf power transistors mtbf
015 j47
5659065
bipolar transistor s-parameter
DIODE 851 MOTOROLA
GX-0300-55-22
BD136
MJD47
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PDF
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2N5039
Abstract: No abstract text available
Text: MOTOROLA Order this document by 2N5038/D SEMICONDUCTOR TECHNICAL DATA 2N 5038* 2N5039 NPN Silicon Transistors ‘ Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in sw itching regulators, inverters, w id e -b a n d a m p lifie rs and pow er o s c illa to rs in
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2N5038/D
2N5039
2N5038
O-204AA
2N5039
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PDF
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BVW56
Abstract: SMPS CIRCUIT DIAGRAM lg TEA1039
Text: Ph ilips S e m ic o n d u c to rs Lin ear P rod ucts P ro d u ct sp e cific ation Control circuit for switched-mode power supply TEA1039 G E N E R A L D ESC RIPTIO N The T E A 1 0 3 9 is a b ipo lar integrated c irc u it intended fo r the co n tro l o f a switched-m ode power supply.
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TEA1039
TEA1039
BVW56
BVW56
SMPS CIRCUIT DIAGRAM lg
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PDF
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diode U3j
Abstract: IRf 447 MOSFET 1RF530 1rf5305 a7x transistor IRF532 MOSFET IRF 531 motorola diode u3j aaBO ON U3J
Text: MOTOROLA SC MOTOROLA XST RS/R F IM E D I b3b?aSM O OÔ ÎbôS 4 IRF530 1RF531 IRF532 IRF533 •I SEM ICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM OS POWER FIELD EFFECT TRANSISTOR These T M O S Pow er FETs are d esign ed for low voltage, high
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IRF530
IRF531
IRF532
IRF533
O-220)
diode U3j
IRf 447 MOSFET
1RF530
1rf5305
a7x transistor
MOSFET IRF 531
motorola diode u3j
aaBO
ON U3J
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tp5n40
Abstract: Motorola transistor 388 TO-204AA TIC 160 D M30TR TP5N40E
Text: b3b725H DDTflSSS HIT bflE D MOTOROLA SC XSTRS/R F MOTOROLA inOTb • SEMICONDUCTOR TECHNICAL DATA MTM5N40 *MTP5N40E Designer's Data Sheet •M otorola Preferred Device Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FETs
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b3b725H
O-204AA)
97A-01
97A-03
-fUO-30(
97A-03
O-204AE)
tp5n40
Motorola transistor 388 TO-204AA
TIC 160 D
M30TR
TP5N40E
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PDF
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d44vh10
Abstract: No abstract text available
Text: MOTOROLA Order this document by D44VH/D SEMICONDUCTOR TECHNICAL DATA NPN D44VH Com plem entary Silicon Power Transistors These com plem entary silicon pow er transistors are designed for h ig h -sp e e d switching applications, such as switching regulators and high frequency inverters.
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D44VH/D
D44VH
D45VH
21A-06
O-220AB
d44vh10
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PDF
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5n05e
Abstract: mtp45n MTM45N05E
Text: MOTOROLA • I SEM ICONDUCTOR TECHNICAL DATA M T M 4 5N 0 5E M T P 45N 05E Designer's Data Sheet T M O S IV P o w er Field E ffe c t Transistors N-Channel Enhancement-Mode Silicon Gate T his advanced " E " series o f TMOS p o w e r MOSFETs is designed to w ith s ta n d high
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97A-02
MTM45N05E
21A-04
MTP45N05E
5n05e
mtp45n
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PDF
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MJ11017
Abstract: darlington power transistor mj11021 MJ11021 Motorola semiconductor mj11018 1N5825 MJ11018 MJ11022 MSD6100 transistor pnp 3015
Text: MOTOROLA Order this document by MJ11017/D SEMICONDUCTOR TECHNICAL DATA PNP M J11017 Com plem entary Darlington Silicon Power Transistors M J1 1 021* NPN . . . d e sig ned fo r use as ge ne ral pu rpo se am plifiers, low fre q u e n cy sw itch ing and m otor con tro l applications.
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MJ11017/D
MJ11018,
MJ11022,
MJ11017
MJ11021
MJ11018
MJ11022
MJ11022
darlington power transistor mj11021
MJ11021
Motorola semiconductor mj11018
1N5825
MSD6100
transistor pnp 3015
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PDF
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MOC8204
Abstract: MOC8205 VDE0160 VDE0832 VDE0833
Text: MOTOROLA S E M IC O N D U C TO R TECHNICAL DATA M O C 8204 M O C 8205 M O C 8206 6 -P in D IP O p t o is o la t o r s Transistor Output . . c o n sist of ga lliu m -a rse n id e infrared em itting d io d e s optically co up led to h igh voltage, silicon, p h o to tra n sisto r detectors in a stan d ard 6-pin D IP package. T h e y are d e sig n e d for
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
30A-Q2
MOC8204
MOC8205
VDE0160
VDE0832
VDE0833
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PDF
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BU323A
Abstract: No abstract text available
Text: MOTOROLA Order this document by BU323A/D SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. •
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OCR Scan
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BU323A/D
BU323A
O-204AA
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PDF
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MPF910
Abstract: No abstract text available
Text: MOTOROLA SEM IC O N D U C T O R MFE910 MPF910 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE TM OS FIELD-EFFECT TRANSISTOR 60 VOLTS T h is T M O S FET is d e sig n e d for high-voltage, h igh -sp e ed sw itch ing applications su c h as line drivers, relay drivers, C M O S logic,
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MFE910
MPF910
MPF910
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PDF
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40N20
Abstract: No abstract text available
Text: MO TO R O L A SC X ST RS /R F MOTOROLA bfiE D b 3 b ? B 5 4 DOTflbOfl ET3 • SEMICONDUCTOR ■ TECHNICAL DATA Designer's Data Sheet MTM40N20 Pow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate T M O S P O W E R FET 40 A M P E R E S
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OCR Scan
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MTM40N20
O-204
97A-01
97A-03
40N20
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PDF
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IRFY9120
Abstract: diode ED 84 IRFY120 660B IRFV460 ISFV460D TO-257AB
Text: Data Sheet No. PD-9.660B I3R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFV4BO N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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OCR Scan
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IRFV460
IRFY044IM)
O-257AA
IRFY120
IRFY130
IRFY140
IRFY240
IRFY340
IRFY430
IRFY440
IRFY9120
diode ED 84
660B
IRFV460
ISFV460D
TO-257AB
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJ13333/D SEMICONDUCTOR TECHNICAL DATA M J13333 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS The M J13 33 3 tra n sisto r is d e sig n e d for high volta ge , h ig h -s p e e d , po w e r sw itching
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MJ13333/D
J13333
O-204AA
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