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    SOT89 GA 19 Search Results

    SOT89 GA 19 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    On semiconductor date Code

    Abstract: on semiconductor marking code sot s4 marking code siemens On semiconductor date Code sot-143 E6327 ON Semiconductor marking marking code ga sot 363 SOT89 marking GA marking CODE GA sot363 sot143 TOP marking 16
    Text: Package Information Disrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW6, MW4 EH S 46 Manufacturer Date code Year / Month Type code Example EH S 46 Siemens 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363 Manufacturer WH S


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    OT-23, OT-143, OT-323, OT-343, OT-363 OD-123, OD-323 OT-223, CSOG5813 OT-143 On semiconductor date Code on semiconductor marking code sot s4 marking code siemens On semiconductor date Code sot-143 E6327 ON Semiconductor marking marking code ga sot 363 SOT89 marking GA marking CODE GA sot363 sot143 TOP marking 16 PDF

    barcode label infineon

    Abstract: SOT89 marking GA label infineon barcode SOT89 MARKING CODE 43 sot143 Marking code 53 marking code 51 sot 363
    Text: GaAs Components Package Information 5 Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-143, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year/Month Type code EH S 46 Example 1994, June BCW 66 H Marking Layout SC-75, SOT-343, SOT-363, P-TSFP-4


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    OT-143, SCT-595, SCT-598 SC-75, OT-343, OT-363, OT-223, MW-12 OT-89 MW-12 barcode label infineon SOT89 marking GA label infineon barcode SOT89 MARKING CODE 43 sot143 Marking code 53 marking code 51 sot 363 PDF

    On semiconductor date Code

    Abstract: SOT 363 marking CODE 68 sot 23-5 marking code SOT89 MARKING CODE 43 on semiconductor marking code sot STS 75 SOT23 marking CODE GA sot363 SOT89 marking GA mp sot 23 marking code ga sot 363
    Text: Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW-6, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year / Month Type code Example EH S 46 Siemens 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363


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    OT-23, OT-143, SCT-595, SCT-598 OT-323, OT-343, OT-363 OD-123, OD-323, SCD-80 On semiconductor date Code SOT 363 marking CODE 68 sot 23-5 marking code SOT89 MARKING CODE 43 on semiconductor marking code sot STS 75 SOT23 marking CODE GA sot363 SOT89 marking GA mp sot 23 marking code ga sot 363 PDF

    ECG001C-500

    Abstract: SOT89 marking GA transistor "micro-x" "marking" 3 micro-x marking 3 Micro-X Marking E MARKING 30 SOT89 DBM ECG001F-3000
    Text: ECG001 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 20.0 dB Gain at 1000 MHz 12.5 dBm Output P1dB at 1000 MHz 25 dBm Output IP3 at 1000 MHz 3.7 dB Noise Figure at 2000 MHz


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    ECG001 OT-89 OT-363 ECG001 fea4-000 AP-000487-000 AP-000515-000 AP-000516-000 ECG001C ECG001C-500 SOT89 marking GA transistor "micro-x" "marking" 3 micro-x marking 3 Micro-X Marking E MARKING 30 SOT89 DBM ECG001F-3000 PDF

    On semiconductor date Code sot-223

    Abstract: marking code ga SOT89 marking GA marking code ga sot 363 MARKING GA SOT-363 diode GG 79 Marking BA SOT89 on semiconductor marking code sot SOT89 MARKING CODE marking CODE GA sot363
    Text: Package Information Discrete and RF Semiconductors Packages Marking Layout SC-74, SOT-23, SOT-143, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year/Month Type code EH S 46 Example 1994, June BCW 66 H Marking Layout SC-75, SOT-323, SOT-343, SOT-363, TSFP-3, TSFP-4


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    SC-74, OT-23, OT-143, SCT-595, SCT-598 SC-75, OT-323, OT-343, OT-363, OD-323, On semiconductor date Code sot-223 marking code ga SOT89 marking GA marking code ga sot 363 MARKING GA SOT-363 diode GG 79 Marking BA SOT89 on semiconductor marking code sot SOT89 MARKING CODE marking CODE GA sot363 PDF

    MARUWA CAPACITORS "H series"

    Abstract: transistor "micro-x" "marking" 3 Micro-X Marking E
    Text: ECG002 DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 20 dB Gain at 1000 MHz 15 dBm Output P1dB at 1000 MHz 29 dBm Output IP3 at 1000 MHz 3.8 dB Noise Figure at 2000 MHz


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    ECG002 OT-89 OT-363 ECG002 29dBm 1000MHz. AP-000487-000 AP-000515-000 MARUWA CAPACITORS "H series" transistor "micro-x" "marking" 3 Micro-X Marking E PDF

    ECG003

    Abstract: EIC Semiconductor capacitor 10 micro farad
    Text: PRELIMINARY DATA SHEET ECG003 BROADBAND HIGH OIP3 AMPLIFIER DC - 3000 MHz Features Applications „ „ DC to 3000 MHz 39 dBm Typical OIP3 at 900 MHz 36 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 900 MHz


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    ECG003 OT-89 ECG003 OT-89 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 EIC Semiconductor capacitor 10 micro farad PDF

    T1789

    Abstract: FET application note 3435G
    Text: MwT-1789HL DC-4 GHz Packaged FET Application Note June 2006 Application Circuit: Typical RF Performance bias at Vds=6.5V, Ids=200mA, Ta=25 °C Parameter Units Test Frequency MHz 870-960 1930-1990 2400-2600 3400-3500 Gain dB 18 14 11 10 Input Return Loss dB


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    MwT-1789HL 200mA, wT-1789 OT-89 T1789 FET application note 3435G PDF

    capacitor 102

    Abstract: ECG001 ECG001B ECG001F MCR03J680 0.1 micro farad capacitor 34 sot-363 power amplifier SS-000349-000 100 micro farad capacitor
    Text: ECG001 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 20.0 dB Gain at 1000 MHz 12.5 dBm Output P1dB at 1000 MHz 25 dBm Output IP3 at 1000 MHz 3.7 dB Noise Figure at 2000 MHz


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    ECG001 OT-89 OT-363 ECG001 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 capacitor 102 ECG001B ECG001F MCR03J680 0.1 micro farad capacitor 34 sot-363 power amplifier SS-000349-000 100 micro farad capacitor PDF

    ECG002

    Abstract: 1 micro farad capacitor ECG002B ECG002F LL2012-FR10K
    Text: ECG002 DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 20 dB Gain at 1000 MHz 15 dBm Output P1dB at 1000 MHz 29 dBm Output IP3 at 1000 MHz 3.8 dB Noise Figure at 2000 MHz


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    ECG002 OT-89 OT-363 ECG002 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 1 micro farad capacitor ECG002B ECG002F LL2012-FR10K PDF

    JESD22-A108-A

    Abstract: No abstract text available
    Text: SCG002 DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 20 dB Gain at 1000 MHz 15 dBm Output P1dB at 1000 MHz 29 dBm Output IP3 at 1000 MHz 3.8 dB Noise Figure at 2000 MHz


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    SCG002 OT-89 SCG002B AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 JESD22-A108-A PDF

    HV9961

    Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
    Text: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


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    product25 HV9961 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509 PDF

    ic str wg 252

    Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
    Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


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    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


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    2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 PDF

    STR 6656

    Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
    Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


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    CAPACITOR 47 MICRO FARAD

    Abstract: capacitor 10 micro farad 100 micro farad capacitor 450 micro farad capacitor capacitor 100 micro farad 10 micro farad capacitor ECG002 capacitor 0.47 micro farad 47 micro farad capacitor 1 micro farad capacitor
    Text: ECG002 DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features „ „ „ „ „ Applications DC to 6000 MHz 20 dB Gain at 1000 MHz 15 dBm Output P1dB at 1000 MHz 29 dBm Output IP3 at 1000 MHz 3.8 dB Noise Figure at 2000 MHz „ Broadband Gain Blocks


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    ECG002 OT-89 ECG002 SS-000350-000 AP-000194-000_ AP-000192-000 AP-000487-000_ CAPACITOR 47 MICRO FARAD capacitor 10 micro farad 100 micro farad capacitor 450 micro farad capacitor capacitor 100 micro farad 10 micro farad capacitor capacitor 0.47 micro farad 47 micro farad capacitor 1 micro farad capacitor PDF

    0.1 micro farad capacitor

    Abstract: capacitor 220 micro farad 1 micro farad capacitor Maruwa ECG001 CAPACITOR 1 MICRO FARAD capacitor 1000 micro farad 0.5 micro farad capacitor 1000 micro farad
    Text: ECG001 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 20.0 dB Gain at 1000 MHz 12.5 dBm Output P1dB at 1000 MHz 25 dBm Output IP3 at 1000 MHz 3.7 dB Noise Figure at 2000 MHz


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    ECG001 OT-89 ECG001 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 SS-000349-000 0.1 micro farad capacitor capacitor 220 micro farad 1 micro farad capacitor Maruwa CAPACITOR 1 MICRO FARAD capacitor 1000 micro farad 0.5 micro farad capacitor 1000 micro farad PDF

    b0416

    Abstract: TO-202AC
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 ~~~;:~ 2SB1044M 2SB1044M 2SB731 2SB734 2SBll15 2SBl115 BFX38 2N3779 ~~~~gA BOT30A BOT30A TIP30A 2N4899 2N3775 2SA547 TN4235 2N4235 2N3740A BFS92 BSP31 TN4030 2SB954 B0240A BCP52 BCX52 ~g~~~A


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    2SA1460 2SA1463 BCX51-10 BCX51-16 ZTX550 TN3468 TN5022 TN3245 2N3245 2SB1044M b0416 TO-202AC PDF

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


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    10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR PDF

    ECG008

    Abstract: MCR10J100
    Text: PRELIMINARY DATA SHEET ECG008 BROADBAND HIGH OIP3 AMPLIFIER DC - 3000 MHz Features Applications „ „ DC to 3000 MHz 40 dBm Typical OIP3 at 1000 MHz Highly Reliable InGaP HBT 15.0 dB Typical Gain at 1000 MHz 23.0 dBm Typical P1dB at 2000 MHz 4.8 dB Typical Noise Figure at 2000 MHz


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    ECG008 OT-89 ECG008 OT-89 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 MCR10J100 PDF

    m33 tf 130

    Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
    Text: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP


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    NE68039 NE68139 NE68539 NE85639 OT-143 ne68000 ne68100 ne85600 UPA862TD NE894 m33 tf 130 NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539 PDF

    A1 AMP RF SOT89

    Abstract: ADA10000 SOIC-16 S3 Package
    Text: ADA10000 1 GHz CATV Amplifier Data Sheet - Rev 2.6 FEATURES • 15 dB Gain • Wide Bandwidth: 50 MHz to 1 GHz • High Linearity : +15 dBm IIP3 +8 V supply • Low Distortion • Low Noise Figure: 2.0 dB • Single +4 V to +9 V Supply • SOIC-16 and SOT-89 Package Options


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    ADA10000 SOIC-16 OT-89 ADA10000 A1 AMP RF SOT89 S3 Package PDF

    ADA10000R

    Abstract: ADA10000RS3
    Text: ADA10000 1 GHz CATV Ampliier Data Sheet - Rev 2.7 FEATURES • 15 dB Gain • Wide Bandwidth: 50 MHz to 1 GHz • High Linearity : +64 dBmV IIP3 +8 V supply • Low Distortion • Low Noise Figure: 2.0 dB • Single +4 V to +6 V Supply • SOIC-16 and SOT-89 Package Options


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    ADA10000 SOIC-16 OT-89 ADA10000 ADA10000R ADA10000RS3 PDF

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


    OCR Scan
    UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685 PDF