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    SOT89 GA 19 Search Results

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    On semiconductor date Code

    Abstract: on semiconductor marking code sot s4 marking code siemens On semiconductor date Code sot-143 E6327 ON Semiconductor marking marking code ga sot 363 SOT89 marking GA marking CODE GA sot363 sot143 TOP marking 16
    Text: Package Information Disrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW6, MW4 EH S 46 Manufacturer Date code Year / Month Type code Example EH S 46 Siemens 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363 Manufacturer WH S


    Original     		PDF OT-23, OT-143, OT-323, OT-343, OT-363 OD-123, OD-323 OT-223, CSOG5813 OT-143 On semiconductor date Code on semiconductor marking code sot s4 marking code siemens On semiconductor date Code sot-143 E6327 ON Semiconductor marking marking code ga sot 363 SOT89 marking GA marking CODE GA sot363 sot143 TOP marking 16

    On semiconductor date Code

    Abstract: SOT 363 marking CODE 68 sot 23-5 marking code SOT89 MARKING CODE 43 on semiconductor marking code sot STS 75 SOT23 marking CODE GA sot363 SOT89 marking GA mp sot 23 marking code ga sot 363
    Text: Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW-6, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year / Month Type code Example EH S 46 Siemens 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363


    Original     		PDF OT-23, OT-143, SCT-595, SCT-598 OT-323, OT-343, OT-363 OD-123, OD-323, SCD-80 On semiconductor date Code SOT 363 marking CODE 68 sot 23-5 marking code SOT89 MARKING CODE 43 on semiconductor marking code sot STS 75 SOT23 marking CODE GA sot363 SOT89 marking GA mp sot 23 marking code ga sot 363

    On semiconductor date Code sot-223

    Abstract: marking code ga SOT89 marking GA marking code ga sot 363 MARKING GA SOT-363 diode GG 79 Marking BA SOT89 on semiconductor marking code sot SOT89 MARKING CODE marking CODE GA sot363
    Text: Package Information Discrete and RF Semiconductors Packages Marking Layout SC-74, SOT-23, SOT-143, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year/Month Type code EH S 46 Example 1994, June BCW 66 H Marking Layout SC-75, SOT-323, SOT-343, SOT-363, TSFP-3, TSFP-4


    Original     		PDF SC-74, OT-23, OT-143, SCT-595, SCT-598 SC-75, OT-323, OT-343, OT-363, OD-323, On semiconductor date Code sot-223 marking code ga SOT89 marking GA marking code ga sot 363 MARKING GA SOT-363 diode GG 79 Marking BA SOT89 on semiconductor marking code sot SOT89 MARKING CODE marking CODE GA sot363

    ECG003

    Abstract: EIC Semiconductor capacitor 10 micro farad
    Text: PRELIMINARY DATA SHEET ECG003 BROADBAND HIGH OIP3 AMPLIFIER DC - 3000 MHz Features Applications „ „ DC to 3000 MHz 39 dBm Typical OIP3 at 900 MHz 36 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 900 MHz


    Original     		PDF ECG003 OT-89 ECG003 OT-89 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 EIC Semiconductor capacitor 10 micro farad

    capacitor 102

    Abstract: ECG001 ECG001B ECG001F MCR03J680 0.1 micro farad capacitor 34 sot-363 power amplifier SS-000349-000 100 micro farad capacitor
    Text: ECG001 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 20.0 dB Gain at 1000 MHz 12.5 dBm Output P1dB at 1000 MHz 25 dBm Output IP3 at 1000 MHz 3.7 dB Noise Figure at 2000 MHz


    Original     		PDF ECG001 OT-89 OT-363 ECG001 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 capacitor 102 ECG001B ECG001F MCR03J680 0.1 micro farad capacitor 34 sot-363 power amplifier SS-000349-000 100 micro farad capacitor

    ECG002

    Abstract: 1 micro farad capacitor ECG002B ECG002F LL2012-FR10K
    Text: ECG002 DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 20 dB Gain at 1000 MHz 15 dBm Output P1dB at 1000 MHz 29 dBm Output IP3 at 1000 MHz 3.8 dB Noise Figure at 2000 MHz


    Original     		PDF ECG002 OT-89 OT-363 ECG002 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 1 micro farad capacitor ECG002B ECG002F LL2012-FR10K

    ic str wg 252

    Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
    Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


    Original     		PDF

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


    Original     		PDF 08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters

    STR 6656

    Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
    Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


    Original     		PDF

    CAPACITOR 47 MICRO FARAD

    Abstract: capacitor 10 micro farad 100 micro farad capacitor 450 micro farad capacitor capacitor 100 micro farad 10 micro farad capacitor ECG002 capacitor 0.47 micro farad 47 micro farad capacitor 1 micro farad capacitor
    Text: ECG002 DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features „ „ „ „ „ Applications DC to 6000 MHz 20 dB Gain at 1000 MHz 15 dBm Output P1dB at 1000 MHz 29 dBm Output IP3 at 1000 MHz 3.8 dB Noise Figure at 2000 MHz „ Broadband Gain Blocks


    Original     		PDF ECG002 OT-89 ECG002 SS-000350-000 AP-000194-000_ AP-000192-000 AP-000487-000_ CAPACITOR 47 MICRO FARAD capacitor 10 micro farad 100 micro farad capacitor 450 micro farad capacitor capacitor 100 micro farad 10 micro farad capacitor capacitor 0.47 micro farad 47 micro farad capacitor 1 micro farad capacitor

    0.1 micro farad capacitor

    Abstract: capacitor 220 micro farad 1 micro farad capacitor Maruwa ECG001 CAPACITOR 1 MICRO FARAD capacitor 1000 micro farad 0.5 micro farad capacitor 1000 micro farad
    Text: ECG001 PRELIMINARY DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 20.0 dB Gain at 1000 MHz 12.5 dBm Output P1dB at 1000 MHz 25 dBm Output IP3 at 1000 MHz 3.7 dB Noise Figure at 2000 MHz


    Original     		PDF ECG001 OT-89 ECG001 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 SS-000349-000 0.1 micro farad capacitor capacitor 220 micro farad 1 micro farad capacitor Maruwa CAPACITOR 1 MICRO FARAD capacitor 1000 micro farad 0.5 micro farad capacitor 1000 micro farad

    b0416

    Abstract: TO-202AC
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 ~~~;:~ 2SB1044M 2SB1044M 2SB731 2SB734 2SBll15 2SBl115 BFX38 2N3779 ~~~~gA BOT30A BOT30A TIP30A 2N4899 2N3775 2SA547 TN4235 2N4235 2N3740A BFS92 BSP31 TN4030 2SB954 B0240A BCP52 BCX52 ~g~~~A


    Original     		PDF 2SA1460 2SA1463 BCX51-10 BCX51-16 ZTX550 TN3468 TN5022 TN3245 2N3245 2SB1044M b0416 TO-202AC

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


    Original     		PDF 10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR

    m33 tf 130

    Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
    Text: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP


    Original     		PDF NE68039 NE68139 NE68539 NE85639 OT-143 ne68000 ne68100 ne85600 UPA862TD NE894 m33 tf 130 NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539

    A1 AMP RF SOT89

    Abstract: ADA10000 SOIC-16 S3 Package
    Text: ADA10000 1 GHz CATV Amplifier Data Sheet - Rev 2.6 FEATURES • 15 dB Gain • Wide Bandwidth: 50 MHz to 1 GHz • High Linearity : +15 dBm IIP3 +8 V supply • Low Distortion • Low Noise Figure: 2.0 dB • Single +4 V to +9 V Supply • SOIC-16 and SOT-89 Package Options


    Original     		PDF ADA10000 SOIC-16 OT-89 ADA10000 A1 AMP RF SOT89 S3 Package

    ADA10000R

    Abstract: ADA10000RS3
    Text: ADA10000 1 GHz CATV Ampliier Data Sheet - Rev 2.7 FEATURES • 15 dB Gain • Wide Bandwidth: 50 MHz to 1 GHz • High Linearity : +64 dBmV IIP3 +8 V supply • Low Distortion • Low Noise Figure: 2.0 dB • Single +4 V to +6 V Supply • SOIC-16 and SOT-89 Package Options


    Original     		PDF ADA10000 SOIC-16 OT-89 ADA10000 ADA10000R ADA10000RS3

    A1 AMP RF SOT89

    Abstract: ada10000rs24 S3 Package
    Text: ADA10000 1 GHz CATV Amplifier Data Sheet - Rev 2.7 FEATURES • 15 dB Gain • Wide Bandwidth: 50 MHz to 1 GHz • High Linearity : +64 dBmV IIP3 +8 V supply • Low Distortion • Low Noise Figure: 2.0 dB • Single +4 V to +6 V Supply • SOIC-16 and SOT-89 Package Options


    Original     		PDF ADA10000 SOIC-16 OT-89 OT-89 ADA10000 A1 AMP RF SOT89 ada10000rs24 S3 Package

    c639

    Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


    Original     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423

    AT-41435

    Abstract: transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC
    Text: Agilent Technologies Transistors Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


    Original     		PDF AT-30511 OT-143 AT-30533 OT-23 AT-31011 AT-31033 5988-9509EN 5989-0925EN AT-41435 transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC

    Amplifier 1W SOT-89

    Abstract: No abstract text available
    Text: ＥＳＬ100ＳＡ 1W ＳＯＴ89 Molded Package FET FEATURES ・Up to 3GHz Frequency Band ・1W Output Power ・SOT-89 SMT Package ・Die Attached with AuSn preforms ・RoHs Compliant DESCRIPTION The ESL100SA is a high performance GaAs MESFET housed in a low-cost SOT-89 molded package.


    Original     		PDF OT-89 ESL100SA 05GHz ESL100SA Amplifier 1W SOT-89

    ap910401

    Abstract: mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10
    Text: New Products in 2010 New Linear GaN Amplifiers • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at 4.4 to 4.9 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical • Flexible Customization for other Frequency Bands using Hybrid Technology


    Original     		PDF MGA-444940-02 ap910401 mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10

    MPS 808

    Abstract: MWT-PH15 WPS-445122-XX mmic code h5 MPS 806 transistor MwT-10 ap910401 GaN amplifier MMA-022028-S7 mps 0820
    Text: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical


    Original     		PDF

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


    OCR Scan     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN