LFPAK footprint
Abstract: PH2920 sot669 lfpak
Text: PH2920 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 13 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH2920 in SOT669 (LFPAK).
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PH2920
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OT669
PH2920
LFPAK footprint
sot669
lfpak
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PH8230
Abstract: MO-235 FOOTPRINT LFPAK package
Text: PH8230 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 — 23 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH8230 in SOT669 (LFPAK).
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PH8230
M3D748
OT669
PH8230
MO-235 FOOTPRINT
LFPAK package
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sot669
Abstract: PH5330E 12334
Text: PH5330E TrenchMOS enhanced logic level FET Rev. 01 — 09 January 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package using TrenchMOS™ technology. 1.2 Features
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PH5330E
M3D748
OT669
sot669
PH5330E
12334
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PHPT60603NY
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY
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PHPT60603NY
OT669
LFPAK56)
PHPT60603PY
AECQ-101
PHPT60603NY
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603PY 60 V, 3 A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY.
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PHPT60603PY
OT669
LFPAK56)
PHPT60603NY.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: PH8230E TrenchMOS enhanced logic level FET Rev. 01 — 04 March 2003 M3D748 Preliminary data 1. Product profile 1.1 Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package using TrenchMOS™ technology.
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PH8230E
M3D748
OT669
PH8230E
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PH2520U
Abstract: 11406
Text: PH2520U TrenchMOS ultra low level FET Rev. 01 — 02 May 2003 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PH2520U in SOT669 LFPAK .
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PH2520U
M3D748
PH2520U
OT669
11406
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor 10 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC.
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PHPT61002PYC
OT669
LFPAK56)
PHPT61002NYC.
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sot669 footprint
Abstract: SOT669
Text: Reflow soldering footprint Footprint information for reflow soldering SOT669 4.7 4.2 0.9 3x 0.25 (2×) 0.25 (2×) 0.6 (4×) 3.45 0.6 (3×) 3.5 2.55 2 0.25 (2×) SR opening = Cu + 0.075 1.1 2.15 3.3 SP opening = Cu − 0.050 0.7 (4×) 1.27 3.81 www.nxp.com
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OT669
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003PY 100 V, 3A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY
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PHPT61003PY
OT669
LFPAK56)
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sot669 footprint
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY
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PHPT60603NY
OT669
LFPAK56)
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AECQ-101
sot669 footprint
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC
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PHPT61002NYC
OT669
LFPAK56)
PHPT61002PYC
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY
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OT669
LFPAK56)
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sot669 footprint
Abstract: No abstract text available
Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY
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OT669
LFPAK56)
PHPT61003PY
AEC-Q101
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SOT669
Abstract: PH2925U MO-235 MO-235 FOOTPRINT
Text: PH2925U TrenchMOS ultra low level FET Rev. 01 — 02 May 2003 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PH2925U in SOT669 LFPAK .
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OT669
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MO-235
MO-235 FOOTPRINT
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so8 footprint
Abstract: sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL
Text: New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK SOT669 package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon
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OT669)
PSMN5R5-60YS)
so8 footprint
sot669 package
SO8 package
PSMN026-80YS
sot669
PSMN012-100YS
PSMN1R2-25YL
PSMN1R3-30YL
PSMN1R5-25YL
PSMN1R7-30YL
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SOT1023
Abstract: lfpak sot1023 sot669 footprint LFPAK footprint so8 footprint PSMN7R0-30YL PSMN1R2-25YL PSMN1R3-30YL PSMN3R0-30YL PSMN3R5-30YL
Text: Nine new Trench 6 MOSFETs in a Power-SO8 package The world’s first < 1 mΩ Power-SO8 MOSFETs at 25 V We’ve extended our range of Trench 6 MOSFETs with nine new devices at 25 V, 30 V, 40 V and 80 V in the LFPAK SOT669 and SOT1023 package. NXP leads the way with its range of Trench 6 MOSFETs in
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OT1023)
PSMN1R2-25YL)
high-efficien84
SOT1023
lfpak sot1023
sot669 footprint
LFPAK footprint
so8 footprint
PSMN7R0-30YL
PSMN1R2-25YL
PSMN1R3-30YL
PSMN3R0-30YL
PSMN3R5-30YL
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Untitled
Abstract: No abstract text available
Text: NXP transistors in LFPAK56 – the true power package for smart efficiency Full power in half the footprint First bipolar transistors in LFPAK/Power-SO8 These high-power bipolar transistors, housed in LFPAK56 Power-SO8 packages, deliver DPAK-like thermal and electrical performance in just half the footprint. Offering reliable,
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AEC-Q101
OT223,
com/group/12466
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BT131 equivalent
Abstract: sot669 footprint SOT669 peak and hold diesel BT131-600D list of P channel power mosfet PBSS4480x PMV65XP smd diode GW smd transistor pinout sot23
Text: New MultiMarket Products Quarterly highlights Semiconductors VOLUME 3 • ISSUE 4 ■ Welcome to the latest issue of Philips’ New MultiMarket Products – Quarterly highlights. In this issue: In addition to discovering some of the key features and benefits of some of our most recent
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PMV65XP
P89LPC936
BUK9Y19-55B,
BUK9Y40-55B,
BUK9Y30-75B
PMEG1020EJ
PMEG2020EJ
BT131 equivalent
sot669 footprint
SOT669
peak and hold diesel
BT131-600D
list of P channel power mosfet
PBSS4480x
PMV65XP
smd diode GW
smd transistor pinout sot23
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SOT669
Abstract: electric cooling water pump engine car electric assisted power steering system BUK7507-55B BUK9507-30B buk9508 NXP Semiconductor Automotive fuel cell 5 kW Integrated Starter Alternator Catalytic Converter
Text: High-performance MOSFETs for automotive systems HPA TrenchMOS – powering automotive innovation Today’s vehicles pack in more features than ever before: engine management units and catalytic converters to reduce environmental impact, ABS and passenger restraint systems for increased safety,
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MO-235 FOOTPRINT
Abstract: No abstract text available
Text: PH2625L N-channel TrenchMOS logic level FET Rev. 01 — 28 April 2004 M3D748 Preliminary data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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OT669.
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MO-235 FOOTPRINT
Abstract: LFPAK footprint sot669 PH8230E MO-235 sot669 package
Text: PH8230E N-channel TrenchMOS enhanced logic level FET Rev. 03 — 02 March 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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OT669
MO-235 FOOTPRINT
LFPAK footprint
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PH8230E
MO-235
sot669 package
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sot669
Abstract: PH6325L
Text: PH6325L N-channel TrenchMOS logic level FET Rev. 01 — 28 April 2004 M3D748 Preliminary data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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PH6325L
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sot669 package
Abstract: LFPAK footprint 7.5B 35 BUK7Y80-150B BUK9Y19-55B SOT669 BUK7Y13-40B BUK9Y11-30B BUK9Y14-40B NXP MOSFETs
Text: HPA TrenchMOS in LFPAK MOSFETs that pack-a-punch in automotive power Delivering the ultimate in performance, NXP’s new range of High Performance Automotive HPA MOSFETs in the compact, thermally enhanced LFPAK provides reduced on-resistance along with improved ruggedness and thermal performance. All this in a very small package
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