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    SOT666 Search Results

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    SOT666 Price and Stock

    Nexperia PDTD123YT,215

    Digital Transistors SOT23 50V .5A NPN RET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PDTD123YT,215 Reel 876,000 3,000
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    • 10000 $0.0221
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    Nexperia NX1029X,115

    MOSFETs SOT666 DUAL CHAN 60V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI NX1029X,115 Reel 428,000 4,000
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    • 10000 $0.068
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    Nexperia PEMH10,115

    Digital Transistors SOT666 50V .1A NPN/NPN RET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PEMH10,115 Reel 16,000 4,000
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    • 10000 $0.079
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    Nexperia 2N7002BKV,115

    MOSFETs Dual N-Channel 60V 340mA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002BKV,115 Reel 12,000 4,000
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    Nexperia PMBT3946VPN,115

    Bipolar Transistors - BJT SOT666 40V .2A NPN/PNP SWTCH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PMBT3946VPN,115 Reel 12,000 4,000
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    SOT666 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SOT666 NXP Semiconductors Plastic surface-mounted package; 6 leads Original PDF
    SOT666 STMicroelectronics GPS HIGH GAIN LNA ICs Original PDF
    SOT666_115 NXP Semiconductors Tape reel SMD; standard product orientation 12NC ending 115 Original PDF
    SOT666_125 NXP Semiconductors Tape reel SMD; reversed product orientation 12NC ending 125 Original PDF
    SOT666_315 NXP Semiconductors Tape reel SMD; standard product orientation 12NC ending 315 Original PDF
    SOT666 BISS loadswitch NXP Semiconductors Philips BISS loadswitch solutions and the SOT666 BISS loadswitch demo board Original PDF

    SOT666 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING zg

    Abstract: 2N7002BKV transistor smd zG TRANSISTOR SMD MARKING CODE zg
    Text: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


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    PDF 2N7002BKV OT666 AEC-Q101 771-2N7002BKV115 2N7002BKV TRANSISTOR SMD MARKING zg transistor smd zG TRANSISTOR SMD MARKING CODE zg

    15KV

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR L02ESD5V0F6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT563 The ESD5V0F6-5 is a low capacitance 5-fold ESD array in the ultra small SOT666 plastic package designed to protect up to


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    PDF L02ESD5V0F6-5 OT563 OT666 100mV 15KV

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR L02ESD5V0F6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT563 The L02ESD5V0F6-5 is a low capacitance 5-fold ESD array in the ultra small SOT666 plastic package designed to protect up to


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    PDF L02ESD5V0F6-5 L02ESD5V0F6-5 OT666 OT563 OT563 100mV

    Untitled

    Abstract: No abstract text available
    Text: SO T6 66 SOT666 Tape reel SMD; standard product orientation 12NC ending 315 Rev. 1 — 26 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel QA Seal


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    PDF OT666 msc074

    g1 TRANSISTOR SMD MARKING CODE

    Abstract: smd transistor marking zf SMD TRANSISTOR fet transistor smd zf MOSFET TRANSISTOR SMD MARKING CODE 11 2N7002PV
    Text: 2N7002PV 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 5 August 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


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    PDF 2N7002PV OT666 AEC-Q101 g1 TRANSISTOR SMD MARKING CODE smd transistor marking zf SMD TRANSISTOR fet transistor smd zf MOSFET TRANSISTOR SMD MARKING CODE 11 2N7002PV

    PMP4201G

    Abstract: PMP4201V PMP4201Y PMP4501G PMP4501V PMP4501Y PMP5501G PMP5501V
    Text: PMP4501V; PMP4501G; PMP4501Y NPN/NPN matched double transistors Rev. 03 — 19 September 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated


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    PDF PMP4501V; PMP4501G; PMP4501Y OT666 OT363 SC-88) PMP4501V OT666 PMP4201V PMP5501V PMP4201G PMP4201V PMP4201Y PMP4501G PMP4501V PMP4501Y PMP5501G PMP5501V

    PMP4201G

    Abstract: PMP4201V PMP4201Y PMP4501G PMP4501V PMP4501Y PMP5201G PMP5201V SOT353-1 footprint
    Text: PMP4201V; PMP4201G; PMP4201Y NPN/NPN matched double transistors Rev. 03 — 15 September 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated


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    PDF PMP4201V; PMP4201G; PMP4201Y OT666 OT363 SC-88) PMP4201V OT666 PMP4501V PMP5201V PMP4201G PMP4201V PMP4201Y PMP4501G PMP4501V PMP4501Y PMP5201G PMP5201V SOT353-1 footprint

    Untitled

    Abstract: No abstract text available
    Text: STLQ015 150 mA, ultra low quiescent current linear voltage regulator Datasheet - production data • Compatible with ceramic capacitor COUT = 1 µF • Internal current and thermal limit • Package: SOT666-6L • Temperature range: from -40 °C to 125 °C


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    PDF STLQ015 OT666-6L OT666 STLQ015 DocID17285

    BCP55

    Abstract: BCX55 PBSS4160V PBSS5160V
    Text: PBSS4160V 60 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 31 January 2005 Product data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. 1.2 Features • ■ ■


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    PDF PBSS4160V OT666 PBSS5160V. BCP55 BCX55 BCX55 PBSS4160V PBSS5160V

    BCP52

    Abstract: BCX52 PBSS4160V PBSS5160V 14508
    Text: PBSS5160V 60 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V.


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    PDF PBSS5160V OT666 PBSS4160V. BCP52 BCX52 BCX52 PBSS4160V PBSS5160V 14508

    PEMD4

    Abstract: BC847B PEMD13 pemd9 PEMD6 PEMB4 PEMD12 PEMH11 PBSS3515VS BZA820A
    Text: New DIMENSIONS AND RECOMMENDED SOLDER LANDS FOR REFLOW SOLDERING SOT66x packages: dimensions in mm • SOT666: 6 leads • SOT665: 5 leads • SOT663: 3 leads SOT663 Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


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    PDF OT66x OT666: OT665: OT663: OT663 OT665 OT66x PEMD4 BC847B PEMD13 pemd9 PEMD6 PEMB4 PEMD12 PEMH11 PBSS3515VS BZA820A

    Untitled

    Abstract: No abstract text available
    Text: UM5304EEXF Quad Channel Low Capacitance ESD Protection Array UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5304EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been


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    PDF UM5304EEXF UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 UM5304EEXF

    Untitled

    Abstract: No abstract text available
    Text: PBSS4220V 20 V, 2 A NPN low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.


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    PDF PBSS4220V OT666 PBSS5220V. PBSS4220V

    SOT353-1 footprint

    Abstract: SOT353-1 thermal resistance SMD CASE footprint PMP4501G PMP4501V PMP5201G PMP5201V PMP5201Y PMP5501G PMP5501V
    Text: PMP5501V; PMP5501G; PMP5501Y PNP/PNP matched double transistors Rev. 03 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated


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    PDF PMP5501V; PMP5501G; PMP5501Y OT666 OT363 SC-88) PMP5501V OT666 PMP5201V PMP4501V SOT353-1 footprint SOT353-1 thermal resistance SMD CASE footprint PMP4501G PMP4501V PMP5201G PMP5201V PMP5201Y PMP5501G PMP5501V

    PMP4201G

    Abstract: PMP4201V PMP4201Y PMP4501G PMP4501V PMP4501Y PMP5501G PMP5501V SOT353-1 footprint
    Text: PMP4501V; PMP4501G; PMP4501Y NPN/NPN matched double transistors Rev. 04 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated


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    PDF PMP4501V; PMP4501G; PMP4501Y OT666 OT363 SC-88) PMP4501V OT666 PMP4201V PMP5501V PMP4201G PMP4201V PMP4201Y PMP4501G PMP4501V PMP4501Y PMP5501G PMP5501V SOT353-1 footprint

    PEMH15

    Abstract: PBLS4003V PEMB10 PEMD4 PEMB20 PEMD13 PEMB15 PEMB16 PEMB18 PBLS1503V
    Text: Semiconductors Date of release: December 2004 Philips’ portfolio in SOT663, SOT665 and SOT666 packages General features Portfolio overview • • • • • • • • • • • Package available with 3, 5 and 6 flatleads Body height of 0.55 mm PCB area comparable with SOT416 SC-75


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    PDF OT663, OT665 OT666 OT416 SC-75) OD523 SC-79) PEMH15 PBLS4003V PEMB10 PEMD4 PEMB20 PEMD13 PEMB15 PEMB16 PEMB18 PBLS1503V

    SOT666

    Abstract: SOT-666
    Text: Package outline Philips Semiconductors Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5


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    PDF OT666 SOT666 SOT-666

    Untitled

    Abstract: No abstract text available
    Text: SO T6 66 PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


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    PDF PMDT290UNE OT666 AEC-Q101

    PESDXL5UV

    Abstract: SOT666 package philips diode arrays
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PESD3V3L5UV; PESD5V0L5UV Low capacitance 5-fold ESD protection diode arrays in SOT666 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package


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    PDF M3D744 OT666 OT666 SCA76 R76/01/pp11 PESDXL5UV SOT666 package philips diode arrays

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR L02ESD5V0F6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT563 The ESD5V0F6-5 is a low capacitance 5-fold ESD array in the ultra small SOT666 plastic package designed to protect up to


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    PDF L02ESD5V0F6-5 OT666 OT563 OT563 100mV

    MARKING CODE SMD IC

    Abstract: PBSS4220V PBSS5220V NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODE N7
    Text: PBSS5220V 20 V, 2 A PNP low VCEsat BISS transistor Rev. 02 — 8 February 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.


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    PDF PBSS5220V OT666 PBSS4220V. PBSS5220V MARKING CODE SMD IC PBSS4220V NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODE N7

    transistor smd marking CODE n6

    Abstract: PBSS4220V PBSS5220V MARKING CODE SMD IC
    Text: PBSS4220V 20 V, 2 A NPN low VCEsat BISS transistor Rev. 01 — 6 February 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.


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    PDF PBSS4220V OT666 PBSS5220V. PBSS4220V transistor smd marking CODE n6 PBSS5220V MARKING CODE SMD IC

    marking code LA SMD

    Abstract: MSD779 PMEG3015EV
    Text: PMEG3015EV 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier in SOT666 package Rev. 01 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an


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    PDF PMEG3015EV OT666 OT666 marking code LA SMD MSD779 PMEG3015EV

    BAS70VV

    Abstract: No abstract text available
    Text: BAS70VV 70 V, 70 mA Schottky barrier triple isolated diode in SOT666 Rev. 01 — 10 September 2004 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small


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    PDF BAS70VV OT666 OT666 BAS70VV