SOT-623
Abstract: k 3683 MS-034
Text: PDF: 2003 Jan 24 Philips Semiconductors Package outline BGA658: plastic ball grid array package; 658 balls; body 40 x 40 x 1.75 mm SOT623-1 B D A D1 ball A1 index area A E1 E A2 A1 detail X C e1 ∅v M C A B b 1/2 e e y y1 C ∅w M C AK AH AF AD AB Y V T P
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BGA658:
OT623-1
MS-034
SOT-623
k 3683
MS-034
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Untitled
Abstract: No abstract text available
Text: Package outline BGA658: plastic ball grid array package; 658 balls; body 40 x 40 x 1.75 mm SOT623-1 B D A D1 ball A1 index area A E1 E A2 A1 detail X C e1 b 1/2 e e y y1 C ∅v M C A B ∅w M C AK AH AF AD AB Y V T P M K H F D B AJ e AG AE AC AA W U e2 R N
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BGA658:
OT623-1
MS-034
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SOT-623
Abstract: MS-034 sot623 MS 034
Text: PDF: 2001 May 16 Philips Semiconductors Package outline BGA658: plastic ball grid array package; 658 balls; body 40 x 40 x 1.75 mm SOT623-1 B D A D1 ball A1 index area A E1 E A2 A1 detail X C e1 b e AJ AG AE AC AA W U R N L J G E C v M B ∅w M y y1 C v M A
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BGA658:
OT623-1
MS-034
SOT-623
MS-034
sot623
MS 034
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Untitled
Abstract: No abstract text available
Text: PC board footprint Philips Semiconductors Footprint information for reflow soldering of BGA658 package SOT623-1 Hx P P Hy see detail X Generic footprint pattern Refer to the package outline drawing for actual layout solder land solder paste deposit solder land plus solder paste
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BGA658
OT623-1
OT623-1
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TBN4226
Abstract: TBN4226E TBN4226KF TBN4226U SOT623F
Text: TBN4226 Series Semiconductor Si NPN Transistor Unit in mm SOT-323 □ Applications 2.1±0.1 1.25±0.05 - VHF and UHF low noise amplifier 3 0.30±0.1 □ Features 1 1.30±0.1 2.0±0.2 - Wide band amplifier 2 - High gain bandwidth product 0.15±0.05 fT = 6 GHz at VCE = 3 V, IC = 7 mA
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TBN4226
OT-323
TBN4226S
TBN4226E
OT-523
TBN4226KF
OT-23,
OT-523,
OT-623F)
TBN4226U
SOT623F
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SOT-623
Abstract: FJZ733 FJZ945
Text: FJZ733 FJZ733 Low Frequency Amplifier 3 • Collector-Base Voltage : VCBO= -60V • Complement to FJZ945 2 1 SOT-623F 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage
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FJZ733
FJZ945
OT-623F
SOT-623
FJZ733
FJZ945
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2N5459
Abstract: 2N5485 mpf102 KSK161 mpf102 equivalent J107 diode J113 equivalent J201 N-channel JFET transistor j210 2N5485 MMBFJ177
Text: Discrete JFETs Products PD VGS off BVGDS Power (V) Dissipation Min (V) Typ (V) Max (V) (mW) IDSS GFS @ ID (uA) @ VDS (V) Min (mA) Max (mA) @ VDS (V) Min (mS) Typ (mS) Max (mS) RDS (Ohm) ID (off) (uA) SOT-223 N-Channel JFTJ105 25 1000 4.5 - 10 1 5 500 - 15
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OT-223
JFTJ105
KSK211
KSK595
MMBF5484
MMBF5485
P1086
2N5460
2N5461
2N5462
2N5459
2N5485 mpf102
KSK161
mpf102 equivalent
J107 diode
J113 equivalent
J201 N-channel JFET
transistor j210
2N5485
MMBFJ177
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Untitled
Abstract: No abstract text available
Text: FJZ733 FJZ733 Low Frequency Amplifier • Collector-Base Voltage : VCBO= -60V • Complement to FJZ945 3 2 1 SOT-623F 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage
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FJZ733
FJZ945
OT-623F
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datasheet 4019
Abstract: Junction-FET 4019 data STK596K kst40 SOT-623
Text: STK596K Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information
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STK596K
OT-623F
KST-4019-001
datasheet 4019
Junction-FET
4019 data
STK596K
kst40
SOT-623
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"marking j9"
Abstract: SOT-623 IC 4015 STJ828K kst40 sot623 marking j9 marking kst
Text: STJ828K Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO.
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STJ828K
OT-623F
KST-4015-000
-10mA
"marking j9"
SOT-623
IC 4015
STJ828K
kst40
sot623
marking j9
marking kst
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ic 4075 datasheet
Abstract: SRA2204K
Text: SRA2204K Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2204K
OT-623F
KSR-4075-000
-10mA
-10mA,
ic 4075 datasheet
SRA2204K
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Untitled
Abstract: No abstract text available
Text: SRA2206K Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2206K
SRA2206K
OT-623F
KSR-4077-001
KSR-4077-001
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Untitled
Abstract: No abstract text available
Text: SRC1219K Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRC1219K
SRC1219K
OT-623F
KSR-4071-001
KSR-4071-001
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ic or 4071 datasheet
Abstract: IC 4071 SRC1219K
Text: SRC1219K Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRC1219K
OT-623F
KSR-4071-000
ic or 4071 datasheet
IC 4071
SRC1219K
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SRC1205K
Abstract: No abstract text available
Text: SRC1205K Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRC1205K
OT-623F
KSR-4067-000
SRC1205K
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SRC1202K
Abstract: No abstract text available
Text: SRC1202K Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRC1202K
OT-623F
KSR-4064-000
SRC1202K
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SRC1201K
Abstract: No abstract text available
Text: SRC1201K Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRC1201K
OT-623F
KSR-4063-000
SRC1201K
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thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™
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623F
Abstract: TBN6301 TBN6301E TBN6301KF TBN6301S TBN6301U SOT-623 10Preliminary SOT623F
Text: Preliminary Specification TBN6301 series NPN SILICON RF TRANSISTOR Unit in mm SOT323 □ Applications 2.1±0.1 1.25±0.05 3 0.30±0.1 □ Features 1 1.30±0.1 2.0±0.2 - UHF and VHF wide band amplifier 2 - High gain bandwidth product 0.15±0.05 fT = 6 GHz @ VCE = 3 V, IC = 10 mA
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TBN6301
OT323
TBN6301U)
TBN6301S
TBN6301E
OT523
TBN6301KF
OT523,
OT623F)
623F
TBN6301U
SOT-623
10Preliminary
SOT623F
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TBN4228U
Abstract: TBN4228 SOT623F SO1 SOT S21 SOT23
Text: TBN4228 Series Semiconductor Si NPN Transistor Unit in mm SOT-323 □ Applications 2.1±0.1 1.25±0.05 3 0.30±0.1 □ Features 1 1.30±0.1 2.0±0.2 - VHF and UHF low noise amplifier 2 - High gain bandwidth product fT = 9 GHz at VCE = 3 V, IC = 5 mA 0.15±0.05
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TBN4228
OT-323
TBN4228S
OT-23
TBN4228E
OT-523
TBN4228KF
OT-23,
OT-523,
TBN4228U
SOT623F
SO1 SOT
S21 SOT23
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130-082
Abstract: ic 38438 38438 IC 112246 128777 890 f 642 ic pdf datasheet PIN CONFIGURATION IC 555 THN6201 dc 38438 33171
Text: THN6201 series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Applications LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain
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THN6201
THN6201S
THN6201U
OT323
THN62
000GHz
200GHz
400GHz
600GHz
130-082
ic 38438
38438 IC
112246
128777
890 f 642 ic pdf datasheet
PIN CONFIGURATION IC 555
dc 38438
33171
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121-351
Abstract: 35219 ic pt 2358 57290 76546 0 281 002 468 460-1 PIN CONFIGURATION IC 555 S 196 156 230 T125
Text: THN6301 Series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure Pin Configuration NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB Typ. @ f = 1 GHz, VCE = 8 V, IC =15 mA
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THN6301
OT343
OT523
THN6301KF
OT323
THN6301Z
THN6301U
000GHz
200GHz
121-351
35219
ic pt 2358
57290
76546
0 281 002 468
460-1
PIN CONFIGURATION IC 555
S 196 156 230
T125
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623f
Abstract: SOT-623F IC BARCODE
Text: SOT-623F Tape and Reel Data SOT-623F Packaging Configuration: Figure 1.0 Packaging Description: SOT-623F parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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OT-623F
623f
SOT-623F
IC BARCODE
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Untitled
Abstract: No abstract text available
Text: SRC1205K Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRC1205K
SRC1205K
OT-623F
KSR-4067-001
KSR-4067-001
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