Untitled
Abstract: No abstract text available
Text: Package outline Plastic single-ended package IPAK ; 3 leads (in-line) SOT533 E A E1 A1 D1 mounting base D2 L1 Q L 1 2 3 e1 w b c M e 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D1 D2 E mm 2.38 2.22 0.93 0.46 0.89 0.71 0.56 0.46
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OT533
O-251
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PHE13002AU
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
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PHE13002AU
OT533
PHE13002AU
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100C
Abstract: BUJ103AU
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ103AU
OT533
100C
BUJ103AU
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BUJ101AU
Abstract: 400V 10A NPN transistor
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ101AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the I-PAK / SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
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BUJ101AU
OT533
BUJ101AU
400V 10A NPN transistor
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SOT-533
Abstract: sot533
Text: Package outline Philips Semiconductors Plastic single-ended package IPAK ; 3 leads (in-line) SOT533 E A E1 A1 D1 mounting base D2 L1 Q L 1 2 3 e1 w b c M e 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D1 D2 E mm 2.38 2.22 0.89
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OT533
O-251
SOT-533
sot533
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PHU11NQ10T
Abstract: SOT533
Text: PHU11NQ10T TrenchMOS standard level FET Rev. 01 — 28 May 2002 Product data M3D445 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHU11NQ10T in SOT533 I-pak .
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PHU11NQ10T
M3D445
PHU11NQ10T
OT533
OT533,
MBB076
MBK915
SOT533
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buj103
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ103AU
OT533
buj103
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E13b
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Plastic single-ended package Philips version of I-PAK ; 3 leads (in-line) SOT533 E A A1 E1 D1 mounting base D Q L 1 2 e1 3 b w M 2.5 c e 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A
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OT533
O-251
E13b
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transistor b 647 c
Abstract: PHE13003AU b 647 transistor
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
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PHE13003AU
OT533
transistor b 647 c
PHE13003AU
b 647 transistor
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TPD2E001
Abstract: TPD2E001DRLR TPD2E001DRSR TPD2E001DRYR TPD2E001DZDR TPD2E001YFPR TPD3E001 TPD4E001 TPD6E001
Text: TPD2E001 www.ti.com. SLLS684E – JULY 2006 – REVISED JUNE 2008 LOW-CAPACITANCE 2-CHANNEL ±15-kV ESD-PROTECTION ARRAY
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TPD2E001
SLLS684E
15-kV
TPD3E001,
TPD2E001
TPD2E001DRLR
TPD2E001DRSR
TPD2E001DRYR
TPD2E001DZDR
TPD2E001YFPR
TPD3E001
TPD4E001
TPD6E001
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PHU97NQ03LT
Abstract: No abstract text available
Text: PHU97NQ03LT N-channel TrenchMOS logic level FET Rev. 01 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.
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PHU97NQ03LT
PHU97NQ03LT
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BTB04-600SAP
Abstract: S0817MH S1217NH BTA12-700BW BTB04 600SAP BTB04-600SAP equivalent BTB06-700SW btb04600sap s1217mh BTA06-400GP
Text: Thyristors 4-Quadrant Triacs - continued 4-Quadrant Triacs - continued Thyristors ST Microelectronics Cross Reference Guide Silicon Controlled Rectifiers SCRs - continued VDRM (V) IGT (mA) Package ST Part NXP Part 800 35/35/35/70 SOT78 / TO220AB Z0109NN
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O220AB
Z0109NN
Z0109SA
BT131-800E
Z0109NA
Z0109SN
BTB04-600SAP
S0817MH
S1217NH
BTA12-700BW
BTB04 600SAP
BTB04-600SAP equivalent
BTB06-700SW
btb04600sap
s1217mh
BTA06-400GP
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Untitled
Abstract: No abstract text available
Text: SN74LVC1T45 SINGLE-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS www.ti.com SCES515H – DECEMBER 2003 – REVISED JANUARY 2007 FEATURES • • • • • • • • Available in the Texas Instruments NanoFree Package
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SN74LVC1T45
SCES515H
24-mA
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TPD2E001-Q1
Abstract: No abstract text available
Text: TPD2E001 www.ti.com. SLLS684E – JULY 2006 – REVISED JUNE 2008 LOW-CAPACITANCE 2-CHANNEL ±15-kV ESD-PROTECTION ARRAY
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TPD2E001
SLLS684E
15-kV
TPD2E001-Q1
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Untitled
Abstract: No abstract text available
Text: TPD2E001 www.ti.com. SLLS684E – JULY 2006 – REVISED JUNE 2008 LOW-CAPACITANCE 2-CHANNEL ±15-kV ESD-PROTECTION ARRAY
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TPD2E001
SLLS684E
15-kV
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lm2804
Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.
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BCE0030C
S-167
BCE0030D
lm2804
marking 513 SOD-323
land dpu 230
toshiba diode 1SS416 footprint
5252 F solar
sot23 2fv
TAH8N401K
IC sj 4558
zener diode reference guide
rn4983
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nq03lt
Abstract: PHP101NQ03LT NQ03LT-01 PHU101NQ03LT
Text: PHP/PHU101NQ03LT N-channel TrenchMOS logic level FET Rev. 03 — 17 November 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.
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PHP/PHU101NQ03LT
mbb076
PHU101NQ03LT
nq03lt
PHP101NQ03LT
NQ03LT-01
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TPD2E001-Q1
Abstract: No abstract text available
Text: TPD2E001-Q1 www.ti.com SLLS993 – NOVEMBER 2009 LOW-CAPACITANCE 2-CHANNEL ±15-kV ESD-PROTECTION ARRAY FOR HIGH-SPEED DATA INTERFACES Check for Samples: TPD2E001-Q1 FEATURES APPLICATIONS • • • • • • • • • 1 2 • • • • • • Qualified for Automotive Applications
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TPD2E001-Q1
SLLS993
15-kV
TPD3E001,
TPD4E001,
TPD6E001
TPD2E001-Q1
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Untitled
Abstract: No abstract text available
Text: SN74LVC1T45 SINGLE-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS www.ti.com SCES515G – DECEMBER 2003 – REVISED DECEMBER 2005 FEATURES • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages
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SN74LVC1T45
SCES515G
24-mA
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Untitled
Abstract: No abstract text available
Text: SN74LVC2G34 DUAL BUFFER GATE www.ti.com FEATURES • • • • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V Max tpd of 4.1 ns at 3.3 V Low Power Consumption, 10-µA Max ICC
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SN74LVC2G34
SCES359F
24-mA
000-V
A114-A)
A115-A)
G3157
SNS74LVC2G53
scyb014
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Untitled
Abstract: No abstract text available
Text: SN74LVC1T45 SINGLE-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS www.ti.com SCES515G – DECEMBER 2003 – REVISED DECEMBER 2005 FEATURES • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages
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SN74LVC1T45
SCES515G
24-mA
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Untitled
Abstract: No abstract text available
Text: SN74LVC1G3157 SINGLEĆPOLE, DOUBLEĆTHROW ANALOG SWITCH SCES424D − JANUARY 2003 - REVISED APRIL 2005 D 1.65-V to 5.5-V VCC Operation D Useful for Both Analog and Digital D D D D D D D DBV, DCK, OR DRL PACKAGE TOP VIEW Applications Specified Break-Before-Make Switching
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SN74LVC1G3157
SCES424D
000-V
A114-A)
A115-A)
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B-234
Abstract: No abstract text available
Text: SN74LVC1G3157 SINGLEĆPOLE, DOUBLEĆTHROW ANALOG SWITCH SCES424D − JANUARY 2003 - REVISED APRIL 2005 D 1.65-V to 5.5-V VCC Operation D Useful for Both Analog and Digital D D D D D D D DBV, DCK, OR DRL PACKAGE TOP VIEW Applications Specified Break-Before-Make Switching
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SN74LVC1G3157
SCES424D
000-V
A114-A)
A115-A)
B-234
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A 673 transistor
Abstract: LB 122 NPN TRANSISTOR SOT533 100pd PHE13002AU TRANSISTOR AH SOT-533 transistor aa a TRANSISTOR 106 d1 SILICON DIFFUSED POWER TRANSISTOR
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
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PHE13002AU
OT533
OT533
A 673 transistor
LB 122 NPN TRANSISTOR
SOT533
100pd
PHE13002AU
TRANSISTOR AH
SOT-533
transistor aa a
TRANSISTOR 106 d1
SILICON DIFFUSED POWER TRANSISTOR
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