SOT37 TRANSISTOR BF Search Results

SOT37 TRANSISTOR BF Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

SOT37 TRANSISTOR BF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BFR134 Abstract: 2322 712 2322-712 Philips fr 153 30 philips resistor 2322 763 Transistor 933 2222 372 transistor J 3305 109 transistor 33 db 2222 379 Text: Product specification Philips Semiconductors BFR134 NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar	OCR Scan	PDF	BFR134 BFR134 2322 712 2322-712 Philips fr 153 30 philips resistor 2322 763 Transistor 933 2222 372 transistor J 3305 109 transistor 33 db 2222 379
BFR90 Abstract: BFR90 transistor transistor BFR90 bfr90 philips BFQ51 UCD074 MEA44S UEA442 Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor PHILIPS BFR90 INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in RF amplifiers such as aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers	OCR Scan	PDF	BFR90 BFQ51. C045hÃ BFR90/02 MB8916 711D6Sb UEA442 BFR90 BFR90 transistor transistor BFR90 bfr90 philips BFQ51 UCD074 MEA44S UEA442
lc 945 p transistor NPN Abstract: BFR96S Text: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device	OCR Scan	PDF	hhS3R31 D031A15 BFR96S BFQ32S. BFR96S/02 lc 945 p transistor NPN BFR96S
k 3436 transistor Abstract: BFQ51 lc 945 transistor 918 TRANSISTOR PNP BFR90A transistor 3746 Text: Philips Semiconductors Product specification T ^ 3 !- /7 PNP 5 GHz wideband transistor PHILIPS BFQ51 INTERNATIONAL DESCRIPTION PNP transistor in a plastic SOT37 envelope. It is primarily intended for use in RF amplifiers such as in aerial amplifiers, radar systems,	OCR Scan	PDF	BFQ51 711002b 00454L BFR90A. k 3436 transistor BFQ51 lc 945 transistor 918 TRANSISTOR PNP BFR90A transistor 3746
B35AP Abstract: No abstract text available Text: Philips Sem iconductors bbS3S31 □OSISb'l T13 • APX NPN 4 GHz wideband transistor ^ Product specification ^ BFQ34T N AriER PHILIPS/PISCRETE b'lE P PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The	OCR Scan	PDF	bbS3S31 BFQ34T ON4497) B35AP
transistor fp 1016 Abstract: BFQ34T ON4497 transistor 1548 b FP 801 QS 100 NPN Transistor npn transistor dc 558 transistor 828 "NPN Transistor" d 772 transistor Text: Product specification P hilips Sem iconductors -T-33-QS NPN 4 GHz wideband transistor PHILIPS INTERNATIONAL BFQ34T SbE D PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The device features high output voltage	OCR Scan	PDF	-T-33-QS BFQ34T ON4497) 4545fl gain500 transistor fp 1016 BFQ34T ON4497 transistor 1548 b FP 801 QS 100 NPN Transistor npn transistor dc 558 transistor 828 "NPN Transistor" d 772 transistor
BFR90 transistor Abstract: BFR90 BFR90 PHILIPS Text: Philips Semiconductors Product specification bbS3T31 00317Tfl Sflb • APX NPN 5 GHz wideband transistor i BFR90 N AMER PHILIPS/DISCRETE DESCRIPTION b^E ]> PINNING NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in RF amplifiers such as aerial	OCR Scan	PDF	bbS3T31 00317Tfl BFR90 BFR90/02 BFQ51. bb53T31 0D31602 BFR90 transistor BFR90 BFR90 PHILIPS
Untitled Abstract: No abstract text available Text: Philips Semiconductors ^ 5 3 ^ 3 1 0D31815 W5 APX Product specification NPN 5 GHz wideband transistor ^ BFR91 N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial	OCR Scan	PDF	0D31815 BFR91 BFR91/02 ON4186)
Untitled Abstract: No abstract text available Text: Philips Semiconductors bbSB^Bl 0031531 "ns HAPX^^duc^peoification PNP 4 G Hz wideband transistor £ BFQ32 N AUER PHILIPS/DISCRETE D ESCRIPTION b'lE PINNING P N P transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband	OCR Scan	PDF	BFQ32 BFQ32/02 BFR96. bbS3T31
BFQ32S Abstract: BFR96S GHz PNP transistor SAA 1020 Philips DLM Text: Philips Sem iconductors Product specification PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION ^ SbE D BFQ32S m 711002b 0G4S433 DMT • PHIN PINNING PNP transistor in a plastic SOT37 envelope. It is intended for use in UHF applications such as broadcast	OCR Scan	PDF	BFQ32S 7110fl2b BFR96S. BFQ32S BFR96S GHz PNP transistor SAA 1020 Philips DLM
BFQ32S Abstract: BFR96S Text: Philips Semiconductors 53^31 ^ 0031544 543 M AP X Product specification PNP 4 GHz wideband transistor ^ «p BFQ32S - n AMER PHILIPS/DISCRETE DESCRIPTION blE D • PINNING PNP transistor in a plastic SOT37 envelope. It Is Intended for use in UHF applications such as broadcast	OCR Scan	PDF	BFQ32S BFR96S. BFQ32S BFR96S
transistor fp 1016 Abstract: BFQ34T ON4497 FP 801 UBB361 Text: Philips Semiconductors bbSBSBl G D S lS b T 113 • APX Product specification NPN 4 GHz wideband transistor BFQ34T N AMER PHILIPS/DISCRETE b'ìE ]> PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The	OCR Scan	PDF	ON4497) BFQ34T transistor fp 1016 BFQ34T ON4497 FP 801 UBB361
BFQ65 Abstract: No abstract text available Text: Philips Semiconductors b b 53^31 QQ31S R T bSQ MAPX Product specification NPN 8 GHz wideband transistor ^ ^ N DESCRIPTION a HER BFQ65 PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz	OCR Scan	PDF	QQ31S BFQ65 BFQ65
Untitled Abstract: No abstract text available Text: Philips Semiconductors bbS3131 0033141 31*1 M A P X Product specilication NPN 2 GHz wideband transistor 1 N Ar1ER PHILIPS/DISCRETE ^ DESCRIPTION BFW93 blE ]> PINNING NPN transistor in a plastic SOT37 envelope. PIN It is intended tor use in VHF and UHF applications, primarily	OCR Scan	PDF	bbS3131 BFW93 BFW93/02

BFR96 Abstract: BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFQ32 4 20 mA 1992 transistor bfr96 philips bfq32 BFR96$ a 933 transistor Text: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor DESCRIPTION VllDfiEb D04577b lfl7 « P H I N SbE D PHILIPS INTERNA TIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as	OCR Scan	PDF	BFR96 DD4S77b ON4487) BFQ32. coll801 711082b BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFQ32 4 20 mA 1992 transistor bfr96 philips bfq32 BFR96$ a 933 transistor
transistor 431 N Abstract: TRANSISTOR D 471 BFW92 BFW92A philips bfw92 Text: Product specification Philips Semiconductors '7 ^ 3 / - / 7 NPN 3 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D • ^ BFW92A ?110fl2b D D M L D 3 2 47b ■ PHIN PINNING NPN transistor in a plastic SOT37 envelope. PIN It is primarily intended for use in	OCR Scan	PDF	BFW92A 110fl2b DDMLD32 BFW92A BFW92 BFW92A/02 transistor 431 N TRANSISTOR D 471 philips bfw92
BFW92A Abstract: SP 1191 BFW92 transistor BFW92A Text: bbS3T31 Philips S em iconductors DD3Sm2 T34 Product specification APX NPN 3 GHz wideband transistor BFW92A N AMER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. DESCRIPTION PIN It is primarily Intended for use in amplifiers in the 40 to 860 MHz	OCR Scan	PDF	bbS3T31 0D32142 BFW92A BFW92A BFW92 BFW92A/02 SP 1191 transistor BFW92A
BFW92 Abstract: philips bfw92 vk200 philips vk200.10 g04b030 Text: Philips Semiconductors Product specification 7 NPN 1 GHz wideband transistor PHILIPS BFW92 INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It has a low noise over a wide current range, a very high power gain and good intermodulation properties. It is primarily intended for	OCR Scan	PDF	BFW92 7110fl2b MEA391 MEA393 BFW92 philips bfw92 vk200 philips vk200.10 g04b030
Untitled Abstract: No abstract text available Text: Philips Semiconductors b bS 3T 31 0 031544 543 APX Product specification PNP 4 GHz wideband transistor BFQ32S N AMER PHILIPS/DISCRETE DESCRIPTION blE D • PINNING PNP transistor in a plastic SOT37 envelope. It is intended for use in UHF applications such as broadcast	OCR Scan	PDF	BFQ32S BFR96S.
philips bfq32 Abstract: BFQ32 Text: Product specification Philips Semiconductors 7 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 5bE » ^ 3 / - 2 . 3 BFQ32 711üfl5b G045420 41D H P H I N PINNING PNP transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband	OCR Scan	PDF	BFR96. BFQ32 G045420 BFQ32/02 philips bfq32 BFQ32
Untitled Abstract: No abstract text available Text: Philips Semiconductors H bb53T31 0D32142 T34 M A P X _Product specification NPN 3 GHz w ideband transistor ^ BFW 92A N AllER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in amplifiers in the 40 to 860 MHz	OCR Scan	PDF	bb53T31 0D32142 BFW92A/02 BFW92A BFW92
transistor BFR91 Abstract: BFR91 transistor BFR91 BFR91 parameter S BFR91 NPN 6 GHz Wideband Transistor BFQ23 DDB161B MEM530 Text: Philips Semiconductors bb53^31 0 0 3 1 Ô1 5 4 T5 M APX Product specification NPN 5 GHz wideband transistor ^ ^ BFR91 b'iE T> N AMER PHILIPS/DISCRETE DESCRIPTION PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use In RF amplifiers such as in aerial	OCR Scan	PDF	BFR91 ON4186) BFQ23. BFR91/02 Q031fl1^ transistor BFR91 BFR91 transistor BFR91 BFR91 parameter S BFR91 NPN 6 GHz Wideband Transistor BFQ23 DDB161B MEM530
BFR96S Abstract: 6852 d TRANSISTOR lc 945 p transistor BFr96s philips bfr96s scattering lc 945 p transistor NPN transistor a 1707 lc 945 transistor B 557 PNP TRANSISTOR transistor B 764 Text: Prod uct specification Philips S em iconductors -T < S /'2 - 3 c NPN 5 GHz wideband transistor HILIPS INTERNATIONAL DESCRIPTION 5LE 711002b BFR96S 0043704 253 H P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device	OCR Scan	PDF	BFR96S 711002b 004S7Ã 11PHIN BFQ32S. BFR96S 6852 d TRANSISTOR lc 945 p transistor BFr96s philips bfr96s scattering lc 945 p transistor NPN transistor a 1707 lc 945 transistor B 557 PNP TRANSISTOR transistor B 764
Untitled Abstract: No abstract text available Text: bbSBTBl 003EQA7 Ell Philips Semiconductors Product specification APX BFT24 NPN 2 GHz w ideband transistor N ANER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily Intended for use in RF low power amplifiers, such as in	OCR Scan	PDF	003EQA7 BFT24

SOT37 TRANSISTOR BF Search Results

SOT37 TRANSISTOR BF Result Highlights (6)

SOT37 TRANSISTOR BF Datasheets Context Search

BFR134

BFR90

lc 945 p transistor NPN

k 3436 transistor

B35AP

transistor fp 1016

BFR90 transistor

Untitled

Untitled

BFQ32S

BFQ32S

transistor fp 1016

BFQ65

Untitled

BFR96

transistor 431 N

BFW92A

BFW92

Untitled

philips bfq32

Untitled

transistor BFR91

BFR96S

Untitled