smd diode marking A3 sot363
Abstract: sot363 aaa
Text: BAT754L Schottky barrier triple diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Three internal isolated planar Schottky barrier diodes with an integrated guard ring for stress protection,encapsulated in very small SOT363 Surface-Mounted Device SMD
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BAT754L
OT363
AEC-Q101
smd diode marking A3 sot363
sot363 aaa
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k1 nxp
Abstract: No abstract text available
Text: BAT74S Dual Schottky barrier diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection. Two electrically isolated Schootky barrier diodes encapsulated in a very small SOT363
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BAT74S
OT363
SC-88)
AEC-Q101
300gal
k1 nxp
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Untitled
Abstract: No abstract text available
Text: PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMGD290UCEA
OT363
AEC-Q101
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TSSOP-6
Abstract: marking 34 TSSOP6 NXP smd marking Yd
Text: PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 18 April 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMGD290UCEA
OT363
AEC-Q101
TSSOP-6
marking 34 TSSOP6 NXP
smd marking Yd
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DIODE smd marking pl
Abstract: mosfet SMD MARKING CODE 352
Text: PMGD175XN 30 V, dual N-channel Trench MOSFET Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMGD175XN
OT363
DIODE smd marking pl
mosfet SMD MARKING CODE 352
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Untitled
Abstract: No abstract text available
Text: BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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BSS138BKS
OT363
SC-88)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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BSS138BKS
OT363
SC-88)
AEC-Q101
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sot363 aaa
Abstract: BSS13
Text: BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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BSS138BKS
OT363
SC-88)
AEC-Q101
771-BSS138BKS115
BSS138BKS
sot363 aaa
BSS13
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UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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BB 509 varicap diode
Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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6 pin TRANSISTOR SMD CODE CAA
Abstract: TEA6721 BF991 spice model
Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、
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BA 7891 NG
Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进
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PRF957
TFF1003HN
TFF1007HN
TFF1014HN
TFF1015HN
TFF1017HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
BA 7891 NG
bts 2140 1b
TFF1014
BLF4G08LS-160A
bf1107 spice model
BF862 spice model
RF transceiver 802.11AC
Multiple output LNB
802.11AC
BGU6104
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MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
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BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
LL914
LL4150,
MMBD2104
Transistor NEC 05F
hp2835 diode
ZENER DIODE t2d
what is the equivalent of ZTX 458 transistor
MMBD2103
T2D DIODE 3w
T2D 8N
2n2222 as equivalent for bfr96
mmbf4932
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MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
MMBD2103
ZENER DIODE t2d
MMBD2101
MMBD2102
MMBD2104
SMD codes
bc107 TRANSISTOR SMD CODE PACKAGE SOT23
Transistor NEC 05F
BAT15-115S
NDS358N
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BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ
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OD-80
OD123/323
OT-23,
OT346
OT-323,
OT-416
OT-223,
OT-89
OT-143,
OT-363
smd code book
transistor SMD P1f
marking code W16 SMD Transistor
TRANSISTOR SMD MARKING CODE jg
smd transistor WW1
Transistor SMD a7s
DIODE SMD L4W
smd diode zener code pj 78
smd transistor wv4
Motorola transistor smd marking codes
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Untitled
Abstract: No abstract text available
Text: PUSB2X4Y ESD protection for high-speed interfaces Rev. 1 — 5 November 2013 Product data sheet 1. Product profile 1.1 General description The device is designed to protect high-speed interfaces such as USB 2.0 ports against ElectroStatic Discharge ESD .
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OT363
SC-88)
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sot363 aaa
Abstract: AAAD SOT-363 NL7SZ18 Marking Code AAAD
Text: NL7SZ18 1−of−2 Non−Inverting Demultiplexer with 3−State Deselected Output The NL7SZ18 is a high- performance 1- to- 2 Demultiplexer operating from a 1.65 V to 5.5 V supply. When the select pin [S] is enabled [high or low], the data in the address pin [A] is routed to one of
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NL7SZ18
NL7SZ18
OT-363/SC70-6/SC-88
NL7SZ18/D
sot363 aaa
AAAD SOT-363
Marking Code AAAD
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74HC2G34GW
Abstract: No abstract text available
Text: 74HC2G34-Q100; 74HCT2G34-Q100 Dual buffer gate Rev. 2 — 4 November 2013 Product data sheet 1. General description The 74HC2G34-Q100; 74HCT2G34-Q100 is a dual buffer. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess
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74HC2G34-Q100;
74HCT2G34-Q100
74HCT2G34-Q100
AEC-Q100
74HC2G34-Q100:
74HCT2G34-Q100:
HCT2G34
74HC2G34GW
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marking y27
Abstract: No abstract text available
Text: 74LVC1G27 Single 3-input NOR gate Rev. 1 — 23 February 2012 Product data sheet 1. General description The 74LVC1G27 provides one 3-input NOR function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V applications.
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74LVC1G27
74LVC1G27
marking y27
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PBLS4003V
Abstract: PBLS2002D PBLS2003D PBLS1501V PBLS2003S PBLS1503V PBLS4004Y PBLS4003D PSSI2021SAY PBLS1504V
Text: Simplify circuit design, save system costs Choose from NXP’s broad complex transistor portfolio: Low VCEsat load switches, differential amplifiers, comparators, MOSFET driver, current mirror, matched pair transistors NXP supports a wide range of applications with a best-in-class selection of current mirrors,
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AN-A006
Abstract: No abstract text available
Text: W hot HEWLETT mLEM PA C K A R D 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm Pj jb at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications
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INA-32063
OT-363
SC-70)
INA-32063
OT-363
OT-143
5967-5769E
AN-A006
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ex 34063
Abstract: 34063 schematic 34063 application note
Text: W hot HEWLETT mLEM PACKARD 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features • +8 dBm Pj ¿3 at 1.9 GHz Surface Mount SOT-363 SC-70 Package • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at 1.9 GHz • Single +3V Supply
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INA-34063
OT-363
SC-70)
INA-34063
OT-363
OT-143
5967-5768E
ex 34063
34063 schematic
34063 application note
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Untitled
Abstract: No abstract text available
Text: W hol HEW LETT l í ' f i i PA CK A R D 0.5 - 6 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86563 Features • Ultra-Miniature Package » Internally Biased, Single +5 V Supply 14 mA • 1.6 dB Noise Figure at 2.4 GHz • 21.8 dB Gain at 2.4 GHz
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MGA-86563
OT-363
SC-70)
MGA-86563
OT-363
OT-143.
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