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    SOT23-6, COMPLEMENTARY MEDIUM POWER TRANSISTORS Search Results

    SOT23-6, COMPLEMENTARY MEDIUM POWER TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    SOT23-6, COMPLEMENTARY MEDIUM POWER TRANSISTORS Price and Stock

    onsemi MPSA05RA

    Bipolar Transistors - BJT NPN Transistor Medium Power
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MPSA05RA 12,000
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    • 10000 $0.0637
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    onsemi BCP56T3G

    Transistor, Bipolar, Si, NPN, Medium Power, VCEO 80VDC, IC 1A, PD 1.5W, SOT-223, hFE 25
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com BCP56T3G 8,000
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    • 10000 $0.1187
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    onsemi TIP117G

    Medium Power NPN Darlington Bipolar Power Transistor PNP , 2.0 A, 100 V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TIP117G 2,000
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    • 100 $0.3016
    • 1000 $0.2727
    • 10000 $0.2482
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    Microchip Technology Inc JANTX2N6193

    JANTX Series 100 V 5 A Through Hole PNP Medium Power Silicon Transistor - TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com JANTX2N6193 190
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    • 10 $15.19
    • 100 $11.52
    • 1000 $11.18
    • 10000 $11.18
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    NTE Electronics Inc NTE153

    Transistor PNP Silicon 90V IC=4A TO-220 Audio Power AMP Medium Speed Switch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NTE153 96
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    • 100 $1.77
    • 1000 $1.5
    • 10000 $1.39
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    Find more SOT23-6, COMPLEMENTARY MEDIUM POWER TRANSISTORS price and stock on Findchips.com

    SOT23-6, COMPLEMENTARY MEDIUM POWER TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    complementary npn-pnp

    Abstract: dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748
    Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES


    Original     		PDF ZXTD4591E6 OT23-6 OT23-6 ZXTD4591E6TA complementary npn-pnp dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748

    Untitled

    Abstract: No abstract text available
    Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES


    Original     		PDF ZXTD4591E6 OT23-6 OT23-6 ZXTD459Fax:

    DIODES 11W

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve


    Original     		PDF ZXTC2063E6 OT23-6, OT23-6 ZXTC20: D-81541 DIODES 11W

    complementary npn-pnp power transistors

    Abstract: sot23 npn-pnp SOT23-6, complementary medium power transistors SOT23-6, complementary transistors
    Text: A Product Line of Diodes Incorporated ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 40 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to


    Original     		PDF ZXTC2061E6 OT23-6, OT23-6 ZXTC2061E6TA D-81541 complementary npn-pnp power transistors sot23 npn-pnp SOT23-6, complementary medium power transistors SOT23-6, complementary transistors

    Untitled

    Abstract: No abstract text available
    Text: ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 35 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.


    Original     		PDF ZXTC2061E6 OT23-6, OT23-6 ZXTC2061E6mbH D-81541

    complementary npn-pnp power transistors

    Abstract: ZETEX medium power complementary transistors TS16949 ZXTC2061E6 ZXTC2061E6TA NPN SOT23-6 RCE SOT23-6
    Text: ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 35 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.


    Original     		PDF ZXTC2061E6 OT23-6, OT23-6 ZXTC2061E6TA D-81541 complementary npn-pnp power transistors ZETEX medium power complementary transistors TS16949 ZXTC2061E6 ZXTC2061E6TA NPN SOT23-6 RCE SOT23-6

    TS16949

    Abstract: ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6
    Text: ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP


    Original     		PDF ZXTC2063E6 OT23-6, OT23-6 ZXTC2063E6TA D-81541 TS16949 ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6

    Untitled

    Abstract: No abstract text available
    Text: ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.


    Original     		PDF ZXTC2062E6 OT23-6, OT23-6 ZXTC2062E6TA D-81541

    ZXTC2062E6

    Abstract: TS16949 ZXTC2062E6TA E2 SOT23 complementary npn-pnp power transistors NPN SOT23-6 sot23 npn-pnp
    Text: ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.


    Original     		PDF ZXTC2062E6 OT23-6, OT23-6 ZXTC2062E6TA D-81541 ZXTC2062E6 TS16949 ZXTC2062E6TA E2 SOT23 complementary npn-pnp power transistors NPN SOT23-6 sot23 npn-pnp

    3554M

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to


    Original     		PDF ZXTC2062E6 OT23-6, OT23-6 ZXTC2062E6TA D-81541 3554M

    TRANSISTOR SMD CODE PACKAGE SOT23

    Abstract: TRANSISTOR BC337 SMD laptop inverter SCHEMATIC TRANSISTOR K 2915 MOSFET schematic diagram of laptop inverter laptop CCFL inverter SCHEMATIC power transistors table smd transistor BC547 datasheet catalog mosfet Transistor smd NPN Transistor smd code LY 83
    Text: Application Note Breakthrough In Small Signal - Low VCEsat BISS Transistors and their Applications AN10116-02 Philips Semiconductors 01/W97 TRAD Application Note AN10116-02 Breakthrough In Small Signal - Low VCEsat (BISS) Transistors and their Applications


    Original     		PDF AN10116-02 01/W97 OT457 SC-74) OT416 SC-75) OT490 SC-89) OT346 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337 SMD laptop inverter SCHEMATIC TRANSISTOR K 2915 MOSFET schematic diagram of laptop inverter laptop CCFL inverter SCHEMATIC power transistors table smd transistor BC547 datasheet catalog mosfet Transistor smd NPN Transistor smd code LY 83

    marking G1 sot-23

    Abstract: MMBT5401 MMBT5551 MARKING G1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT-23 FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER - 3. COLLECTOR MARKING: G1


    Original     		PDF OT-23 MMBT5551 OT-23 MMBT5401 100MHz MMBT5551 marking G1 sot-23 MMBT5401 MARKING G1

    TEA15xx-series

    Abstract: laptop inverter ccfl low noise transistors bc638 power transistor transistors equivalents TV power transistor datasheet AN10117-01 PNP SOT89 laptop motherboard resistors Royer oscillator Schottky Diode SC-62
    Text: Application Note Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Philips Semiconductors 1.2/W97 TRAD Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Application Note Philips Semiconductors


    Original     		PDF AN10117-01 2/W97 AN10116: AN10230: PMEG1020EA PMEG2010EA D-22529 TEA15xx-series laptop inverter ccfl low noise transistors bc638 power transistor transistors equivalents TV power transistor datasheet AN10117-01 PNP SOT89 laptop motherboard resistors Royer oscillator Schottky Diode SC-62

    Marking 1GM

    Abstract: 1gm transistor 1GM sot-23 transistor MMBTA06 MMBTA56 transistor 1gm 6
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT-23 FEATURES z z Complementary PNP types available MMBTA56 1. BASE Ldeal for medium power amplification and switching 2. EMITTER 3. COLLECTOR


    Original     		PDF OT-23 MMBTA06 OT-23 MMBTA56 Marking 1GM 1gm transistor 1GM sot-23 transistor MMBTA06 MMBTA56 transistor 1gm 6

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4-iune 1996_ O_ PARTMARKING DETAILS BC817 -6 D Z BC817-16 - 6AZ B C 817-25-6B Z BC818 -6 H Z BC817-40-6C Z BC818-40-6G Z B C 818-16-6EZ B C 818-25-6FZ COMPLEMENTARY TYPES BC817


    OCR Scan     		PDF BC817 BC817-16 817-25-6B BC818 BC817-40-6C BC818-40-6G 818-16-6EZ 818-25-6FZ BC807

    BCW66

    Abstract: transistor EH sot-23 BCW65 BCW65A BCW65B BCW66F BCW67 BCW68 ferranti BCW66H
    Text: * FERRANTI semiconductors BCW65 BCW66 NPN Sil icon Planar Medium Power Transistors DESCRIPTION These devices are intended for use in medium power general purpose, switching and low noise applications. Complementary to the BCW67 and BCW68. Encapsulated in the popular SOT-23 package these devices


    OCR Scan     		PDF BCW65 BCW66 BCW67 BCW68. OT-23 BCW66 BCW65/66, BCW65/66 transistor EH sot-23 BCW65A BCW65B BCW66F BCW68 ferranti BCW66H

    cec PNP transistor

    Abstract: No abstract text available
    Text: Die no. B-93 PNP medium power transistor These are epitaxial planar PNP silicon transistors. Dimensions Units : mm SST3 Features available in a SST3 (SST, SOT-23) package, see page 300 collector-to-emitter breakdown voltage, BVCE0 = 60 V (min) at Iq =1.0 mA


    OCR Scan     		PDF OT-23) SSTA56 SSTA06, cec PNP transistor

    p2d smd

    Abstract: smd code p2d smd bt2 marking codes transistors sot-223 smd code p1d SOT-23 MARKING T36 sot-89 marking H3 transistors sot-23 "Marking code 26" P2D SOT223 H3 SOT-89
    Text: High Voltage S M D ' Transistors 11 High Voltage SMD Transistors Description Mechanical Data Philips Components produces a variety of chip geometries in order to offer high voltage transistors with a broad range of current handling capabilities. The result is a device which not


    OCR Scan     		PDF BST40 PMBT5401 PMBT5550 PMBT5551 PMBTA42 PMBTA43 PMBTA92 PMBTA93 PXTA42 PXTA92 p2d smd smd code p2d smd bt2 marking codes transistors sot-223 smd code p1d SOT-23 MARKING T36 sot-89 marking H3 transistors sot-23 "Marking code 26" P2D SOT223 H3 SOT-89

    transistor SMD P2F

    Abstract: transistor smd marking KA smd transistor p1p SMD Code p2f transistor smd P2B TRANSISTOR SMD CODE PACKAGE SOT89 smd p2f TRANSISTOR p1p ON MARKING P2F p2f smd
    Text: SMD Switching Transistors SMD® Switching Transistors Description Mechanical Data Philips Components switching transistors are fabricated using gold doping to reduce the minority carriers in the junction, thus improving the transition performance of the


    OCR Scan     		PDF OT-23, OT-89 OT-223, PMBT4401 PMBT4403 PXT2222A PXT2907A PXT4401 PXT4403 PZT2222A transistor SMD P2F transistor smd marking KA smd transistor p1p SMD Code p2f transistor smd P2B TRANSISTOR SMD CODE PACKAGE SOT89 smd p2f TRANSISTOR p1p ON MARKING P2F p2f smd

    Transistors smd 1G

    Abstract: 110 SOT23
    Text: GENERAL PURPOSE SM I NPN TRANSISTORS DESCRIPTION • Philips Components general purpose transistors combine the highest quality standards with state-of-the-art production equipment to fulfill the need for generic, low-cost devices. These transistors provide a broad selection


    OCR Scan     		PDF OT-89 OT-223 PXT2222A PXT3904 PXT4401 PZT2222A OT-89 OT-143 OT-223 Transistors smd 1G 110 SOT23

    5cp smd

    Abstract: smd 3fp 5Bp smd smd code marking 2A sot23 p2g SMD SMD Code BJP 60 BC857B sot23 3Bp smd marking codes transistors sot-23 26 JB MARKING SOT-23
    Text: General Purpose SMD PNP Transistors 11 General Purpose SMD® PNP Transistors Description Mechanical Data Philips Components general purpose transistors combine the highest quality standards with state-of-the-art pro­ duction equipment to fulfill the need for generic, low-cost


    OCR Scan     		PDF OT-23 OT-89 OT-143 OT-223 OT-223 5cp smd smd 3fp 5Bp smd smd code marking 2A sot23 p2g SMD SMD Code BJP 60 BC857B sot23 3Bp smd marking codes transistors sot-23 26 JB MARKING SOT-23

    T-23

    Abstract: No abstract text available
    Text: HIGH VOLTAGE SMI TRANSISTORS DESCRIPTION • Philips Components produces a variety of chip geometries in order to offer high voltage transistors with a broad range of current handling capabilities. The result is a device which not only fulfills high voltage application


    OCR Scan     		PDF OT-89 OT-223 OT-23 OT-89 T-23

    SSTA05

    Abstract: "Die No."
    Text: □IE No. r PNP Medium Power TRANSISTOR DIE No. •MAXIMUM RATINGS T A=25°C Free Air Symbol Value Unit Collector-Emitter Voltage VcEO 60 V Collector-Base Voltage VcBO 60 V Emitter-Base Voltage V ebo 4 V ■ DESCRIPTION Collector Current Continuous lc 500


    OCR Scan     		PDF

    BCW67

    Abstract: BCW65 BCW66 BCW67A BCW68 ferranti
    Text: 4 FER R AN TI ¥ semiconductors BCW67 BCW68 PNP Sil icon Planar M e d i u m P o w e r Transistors DESCRIPTION These devices are intended for use in medium power general purpose, switching and low noise applications. Complementary to the BCW65 and BCW66.


    OCR Scan     		PDF BCW67 BCW68 BCW65 BCW66. OT-23 BCW68 BCW67/68, BCW66 BCW67A ferranti