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    SOT23-5 R2P Search Results

    SOT23-5 R2P Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    SOT23-5 R2P Datasheets Context Search

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    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    3F2 SMD Transistor

    Abstract: smd code marking rf ft sot23 bfr93a SMD TRANSISTOR MARKING fq TRANSISTOR SMD MARKING CODE dk transistor marking R2p SMD MARKING CODE TRANSISTOR 501 smd TRANSISTOR code marking VP sot23 bft93 die st 9335
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 6 GHz wideband transistor


    Original     		PDF BFR93A BFT93. BFR93A MSB003 3F2 SMD Transistor smd code marking rf ft sot23 SMD TRANSISTOR MARKING fq TRANSISTOR SMD MARKING CODE dk transistor marking R2p SMD MARKING CODE TRANSISTOR 501 smd TRANSISTOR code marking VP sot23 bft93 die st 9335

    Sis 968

    Abstract: m21 sot23 transistor BBBCR2032BX sis968 KBC-ITE-8512 transistor m21 sot23 LG-2413S-1 SIS762 G784P81U nec c1106
    Text: 5 4 3 2 1 D D Inventec Corporation R&D Division C C CONFIDENTIAL B B Board name : Mother Board Schematic A A Project : xxxx FSC_v5535 Version : 01 Inventec Corporation <OrgAddr4> 5F, No. 35, Section 2, Zhongyang South Road Beitou District, Taipei 11270, Taiwan


    Original     		PDF v5535) S1002 C1002 SW1001 6026B0057602 1BT002-0121L SW1002 C1003 Sis 968 m21 sot23 transistor BBBCR2032BX sis968 KBC-ITE-8512 transistor m21 sot23 LG-2413S-1 SIS762 G784P81U nec c1106

    via VT8237A

    Abstract: K8N890 bq24721 VT6103L IT8512E-L vt1634 vt8237 Inventec npn transistor w16 w25 transistor smd
    Text: 5 4 3 2 1 Inventec Corporation R&D Division D D C C Board name : Mother Board Schematic Project : E25 Version : A02 MV Build Initial Date : Jan 1 , 2006 B B A A Inventec Corporation 5F, No. 35, Section 2, Zhongyang South Road Beitou District, Taipei 11270, Taiwan


    Original     		PDF K8N890 CN1001 60mils G5240B1T1U 6019B0252801 U1003 3703-F12N-03R 6012B0111303 6019B0252801 via VT8237A bq24721 VT6103L IT8512E-L vt1634 vt8237 Inventec npn transistor w16 w25 transistor smd

    IT8512E-L

    Abstract: ITE 8512 w25x80vssig bq24721 Inventec 28c43 KBC-ITE-8512 G5240B1T1U PZ6382A-284S-41F transistor C547 npn
    Text: 5 4 3 2 1 Inventec Corporation R&D Division D D C C Board name : Mother Board Schematic Project : E25 Version : A02 MV Build Initial Date : Jan 1 , 2006 B B A A Inventec Corporation <OrgAddr4> 5F, No. 35, Section 2, Zhongyang South Road Beitou District, Taipei 11270, Taiwan


    Original     		PDF K8N890 U1002 CN1001 60mils G5240B1T1U 6019B0252801 U1003 3703-F12N-03R 6012B0111303 IT8512E-L ITE 8512 w25x80vssig bq24721 Inventec 28c43 KBC-ITE-8512 PZ6382A-284S-41F transistor C547 npn

    MBB264

    Abstract: BFR91A transistor datasheet transistor No bfr91a BFR91A transistor marking R2p BFR93A BFT93 MSB003 transistor BFR93A BFR91A transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 6 GHz wideband transistor


    Original     		PDF BFR93A BFT93. MSB003 SCA55 127127/00/02/pp12 MBB264 BFR91A transistor datasheet transistor No bfr91a BFR91A transistor marking R2p BFR93A BFT93 MSB003 transistor BFR93A BFR91A transistor

    transistor marking R2p

    Abstract: SOT23 R2P BFR91A transistor datasheet MBB264 BFR91A BFR93A BFT93 MSB003 transistor BFR93A MBG246
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 1997 Oct 29 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION • High power gain


    Original     		PDF BFR93A BFT93. MSB003 R77/02/pp13 transistor marking R2p SOT23 R2P BFR91A transistor datasheet MBB264 BFR91A BFR93A BFT93 MSB003 transistor BFR93A MBG246

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 1997 Oct 29 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION • High power gain NPN wideband transistor in a plastic


    Original     		PDF BFR93A BFT93. MSB003 R77/02/pp13

    AS080447-33N

    Abstract: l0422 IA2410 C22A c2f sot AS120252-9R3N IA4910 C2F SOT23 PD85006L-E PD85035S-E
    Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm


    Original     		PDF STEVAL-TDR011V1 PD85006L-E STAP85050 STEVAL-TDR011V1 AS080447-33N l0422 IA2410 C22A c2f sot AS120252-9R3N IA4910 C2F SOT23 PD85035S-E

    MA4P7436-1141T

    Abstract: AS080447-33N IA2410 AS120252-9R3N PD85006L-E SOT323-5 C1P SOT23 GRM42-6 COG c6p SOT23 PD85035s-e
    Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Data brief Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A


    Original     		PDF STEVAL-TDR011V1 PD85006L-E STAP85050 STEVAL-TDR011V1 MA4P7436-1141T AS080447-33N IA2410 AS120252-9R3N SOT323-5 C1P SOT23 GRM42-6 COG c6p SOT23 PD85035s-e

    ia2410

    Abstract: No abstract text available
    Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm


    Original     		PDF STEVAL-TDR011V1 PD85006L-E STAP85050 STEVAL-TDR011V1 ia2410

    w1p npn

    Abstract: SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P
    Text: 11 W id eb an d SMD Transistors Wideband SMD® Transistors Description Mechanical Data Philips Components wideband transistors are the result of leading-edge technology dedicated to expanding perfor­ mance and selection in the wideband arena. The devices are


    OCR Scan     		PDF OT-223 priFS17 BFS17A BFT25 BFT92 BFT93 OT-23 OT-89 OT-143 OT-223 w1p npn SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P

    sot23 marking code 8pf

    Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V


    OCR Scan     		PDF OT-23) SC-59/Japanese SST1130 MMST1130 200mA SST5088 MMST5088 100nA SST5089 sot23 marking code 8pf marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5

    NPN CBO 40V CEO 25V EBO 5V

    Abstract: MMST8598
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.


    OCR Scan     		PDF OT-23) 200mA SC-59/Japanese SST1130 MMST1130 SST5088 MMST5088 100nA 50MHz NPN CBO 40V CEO 25V EBO 5V MMST8598

    MARKING CODE R1C

    Abstract: R2F SOT-23 R1H MARKING CODE 1T1 SOT-23 MMST3904 MMST8598 SOT-23 MARKING R2X SSTA29 R2C marking SOT-23 R2C
    Text: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions (Unit SST SMT (U. S. /European SOT-23) (SC-59/Japanese SOT-23) 0 .9 5 1 °- * 1 .9 ± 0 .2 f> > 1.9± 0.2 0.45 ±0.1 0.95 0.95 ; 0.95 0.95


    OCR Scan     		PDF OT-23) SC-59 SC-59/Japanese -95-o GD1D47S 00104A0 MARKING CODE R1C R2F SOT-23 R1H MARKING CODE 1T1 SOT-23 MMST3904 MMST8598 SOT-23 MARKING R2X SSTA29 R2C marking SOT-23 R2C

    marking r2k

    Abstract: marking r1c GAJ SOT23 R1P SOT-223
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.


    OCR Scan     		PDF OT-23) SSTH30 MMST1130 SC-59/Japanese BCX70K BCX71G BCX71H BCX71J BFS17 marking r2k marking r1c GAJ SOT23 R1P SOT-223

    SST4124

    Abstract: SST5086 SST5089 R2F SOT-23 marking c33 MMSTA70 SOT-23 R2C r1a SOT23 SSTA13 R2C marking
    Text: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions (Unit SST SMT (U. S. /European SOT-23) (SC-59/Japanese SOT-23) 0.951°-* 1 .9± 0.2 f> > 1.9± 0.2 0 .4 5 ± 0 .1 0 .9 5 0.95 ;0 . 9 5 0 . 9 5


    OCR Scan     		PDF OT-23) SC-59 SC-59/Japanese -95-o GD1D47S No100mA 50MHz SST4124 SST5086 SST5089 R2F SOT-23 marking c33 MMSTA70 SOT-23 R2C r1a SOT23 SSTA13 R2C marking

    sot83

    Abstract: MARKING CODE R1C marking r2k IC marking R2k R2C marking marking r1c SOT23 R2P marking code R2C
    Text: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions ,Unit : r SST SMT (U. & /European SOT-23) (SC-59/Japanese SOT-23) 2 0 .4 5 ± 0 .1 0 .9 5 1 0.8 + 0 . 1 ! (g)Frl t l °-95-o Î .0.95 Dimensions


    OCR Scan     		PDF OT-23) SC-59 SC-59/Japanese -95-o sot83 MARKING CODE R1C marking r2k IC marking R2k R2C marking marking r1c SOT23 R2P marking code R2C

    transistor 667

    Abstract: No abstract text available
    Text: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2


    OCR Scan     		PDF BFR93A BFT93. transistor 667

    BFR91 spice parameters

    Abstract: BF 194 transistor Philips FA 261 equivalent transistor of bfr93a SOT23 R2P transistor BFR93A 993 395 pnp npn BFT93 L7E transistor BFR93A
    Text: • bb53^31 0QB51fl2 MTM ■ APX Philips Semiconductors Product specification AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES BFR93A e PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 2 emitter


    OCR Scan     		PDF 0QB51fl2 BFR93A BFT93. feedback00 BFR91 spice parameters BF 194 transistor Philips FA 261 equivalent transistor of bfr93a SOT23 R2P transistor BFR93A 993 395 pnp npn BFT93 L7E transistor BFR93A

    Untitled

    Abstract: No abstract text available
    Text: 7 1 1 0 0 2 b O C I b ^m a Philips Sem iconductors 2T2 RHIN Product specification NPN 6 GHz wideband transistor FEATURES BFR93A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2 emitter • PNP complement is the BFT93.


    OCR Scan     		PDF BFR93A BFT93.

    transistor 667

    Abstract: BFR93A Philips FA 261 transistor bf 422 NPN BFR91A BFT93 BF 194 transistor transistor BF 257 transistor bf 184 BF 184 transistor
    Text: WÊt 7 1 1 G û 2 t Philips Semiconductors OOb^mfl 2T2 • R H I N ^ P ro d u c ^ p e c ific a tio n NPN 6 GHz wideband transistor S= PINNING FEATURES DESCRIPTION PIN • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2


    OCR Scan     		PDF BFR93A BFT93. transistor 667 BFR93A Philips FA 261 transistor bf 422 NPN BFR91A BFT93 BF 194 transistor transistor BF 257 transistor bf 184 BF 184 transistor