tantal
Abstract: No abstract text available
Text: SOT23-6W 120mA 2ch LDO REGULATORS NO. EA-077-0207 51 6 5,(6 OUTLINE 7KH 51 6HULHV DUH YROWDJH UHJXODWRU ,&V ZLWK KLJK RXWSXW YROWDJH DFFXUDF\ ORZ VXSSO\ FXUUHQW ORZ GURSRXW DQG KLJK ULSSOH UHMHFWLRQ E\ &026 SURFHVV (DFK RI WKHVH YROWDJH UHJXODWRU ,&V FRQVLVWV RI D YROWDJH UHIHUHQFH XQLW DQ
|
Original
|
PDF
|
OT23-6W
120mA
EA-077-0207
R5322N
R5322N001x
tantal
|
sot236 mark code GRF
Abstract: No abstract text available
Text: 51B GRF SOT23-6 150mA 2ch LDO REGULATORS NO. EA-089-0204 51 6(5,(6 OUTLINE 7KH 51 6HULHV DUH &026EDVHG YROWDJH UHJXODWRU ,&V ZLWK KLJK RXWSXW YROWDJH DFFXUDF\ ORZ VXSSO\ FXUUHQW ORZ GURSRXW DQG KLJK ULSSOH UHMHFWLRQ (DFK RI WKHVH YROWDJH UHJXODWRU ,&V FRQVLVWV RI D YROWDJH UHIHUHQFH XQLW DQ HUURU
|
Original
|
PDF
|
OT23-6
150mA
EA-089-0204
026EDVHG
sot236 mark code GRF
|
marking code pa sot-26
Abstract: smd SOT26 SMD MARKING CODE 26 sot-363 CMDD6001 smd transistor marking PA SMD MARKING CODE sot 26 smd marking 30 SOD 23 marking CODE R SMD DIODE on semiconductor marking code sot
Text: PRODUCT announcement Ultra Low Leakage Diodes in SOT-26, SOT-23, SOT-363, SOD-323, SOD-523 and SOT-563 packages SOT-26 SOT-23 SOT-363 SOD-323 SOD-523 SOT-563 features • Ultra Low Leakage: 500pA max. • VRRM: 100Volts • Available in six space saving SMD packages
|
Original
|
PDF
|
OT-26,
OT-23,
OT-363,
OD-323,
OD-523
OT-563
OT-26
OT-23
OT-363
OD-323
marking code pa sot-26
smd SOT26
SMD MARKING CODE 26 sot-363
CMDD6001
smd transistor marking PA
SMD MARKING CODE
sot 26 smd marking 30
SOD 23
marking CODE R SMD DIODE
on semiconductor marking code sot
|
23AG
Abstract: STS3405
Text: STS3405 S a mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 100 @ VGS=-10V -30V SOT-23 package.
|
Original
|
PDF
|
STS3405
OT-23
OT-23
23AG
STS3405
|
STS3405
Abstract: No abstract text available
Text: STS3405 Green Product S a mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS ON (m Ω) Max FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 100 @ VGS=-10V -30V
|
Original
|
PDF
|
STS3405
OT-23
OT-23
STS3405
|
Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JANUARY 1996_ FEATURES * ^ D S I o n F 5 i2 * 60 V o lt V DS C O M PLEM ENTAR Y TYPE • ZVP3306F PAR TM ARKING DETAIL - MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M BO L
|
OCR Scan
|
PDF
|
ZVP3306F
ZVN3306F
|
bs250f
Abstract: GS SOT23
Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250F ISSUE 3 - JANUARY 1996 PAR TM ARKING DETAIL - M X SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L D ra in -S o u rc e V o lta g e V qs -45 V C o n tin u o u s D ra in C u rre n t at Tamb=25°C •o
|
OCR Scan
|
PDF
|
BS250F
-200m
300jis.
bs250f
GS SOT23
|
Untitled
Abstract: No abstract text available
Text: Surface M ount Dual Zener Diodes 350mW Dual Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* VZ @ Izr ZZT @ !zt Typical Temperature Coefficient TC ZZK @ >ZK Volts O hm s mA O hm s mA VI V2 V3 2.5-2.9 2.8-3.2 3.1-3.5
|
OCR Scan
|
PDF
|
350mW
Diodes/SOT23
DZ23-C2V7
DZ23-C3
DZ23-C3V3
DZ23-C3V6
DZ23-C3V9
DZ23-C4V3
DZ23-C4V7
DZ23-C5V1
|
Untitled
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DM OS FET ISSUE 4 - APRIL 1998_ FEATURES * b v dss = io o v Low Threshold PARTMARKING DETAIL -S A A ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYMBOL D ra in -S o u rc e V o lta g e V ds VALUE
|
OCR Scan
|
PDF
|
|
bf 333 transistor
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 -OCTOBER 1995 G PARTMARKING DETAIL - EK ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V ces 125 V C o lle c to r-E m itte r V o lta g e V CEO 125 V E m itter-B ase V oltag e P ea k P u ls e C u r r e n t
|
OCR Scan
|
PDF
|
300ns.
bf 333 transistor
|
CW65
Abstract: No abstract text available
Text: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - AUGUST 1935_ P A R T M A R K IN G D E T A IL S B C W 65A - EA B CW 65A R - BCW 65B - EB B C W 65B R - 4V 5V B CW 65C - EC B C W 65C R - 6V B CW 66F - EF B CW 66FR -
|
OCR Scan
|
PDF
|
BCW65
BCW66
CW65
|
Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT596 ISSUE 3 - NOVEMBER 1995_ O P A R T M A R K iN G D E TA IL - 596 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e VALUE U N IT
|
OCR Scan
|
PDF
|
FMMT596
300us.
|
J203
Abstract: No abstract text available
Text: FMMJ201 to FM M J204 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS P A R T M A R K IN G D E T A IL S : FM M J201 - POI FM M J202 - PO2 FM M J203 - PO3 F M M J204 - PO4 ABSOLUTE M A X IM U M RATINGS at Tamb = 2 5 °C Gate Drain or G ate-S ource V oltag e Notes
|
OCR Scan
|
PDF
|
FMMJ201
DS168
J203
|
SS80B
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 - SEPTEMBER 95 Q_ P A R T M A R K IN G D E TA ILS - B S S 82B - CL B SS82C - CM BSS82B BSS82C ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL VALUE U N IT V CBO -60 V V CEO -60 V C o lle c to r-B a s e V o lta g e
|
OCR Scan
|
PDF
|
SS82C
BSS82B
BSS82C
SS80B
300us.
|
|
|
BSS79C
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 - SEPTEMBER 95 Q_ P A R T M A R K IN G D E TA ILS - B S S 79B - CE B SS79C - CF BSS79B BSS79C ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e
|
OCR Scan
|
PDF
|
SS79C
BSS79B
BSS79C
SS79B
BSS79C
|
Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995_ _ FE A TU R E S * 6 0 V o lt V CE0 * 1 A m p c o n tin u o u s c u rre n t C O M P L E M E N T A R Y TY P E - FM M T451 P A R T M A R K IN G D E T A IL - 551 ABSOLUTE MAXIMUM RATINGS.
|
OCR Scan
|
PDF
|
-100nA
FMMT551
|
4044 SOT23-8
Abstract: No abstract text available
Text: ykiyjxivki 19-1377; Rev0; 5/98 Single/Dual/Quad, Low -Cost, SOT23, M i c r o p o w e r Rail-to-Rail I/O Op A m p s Description The M A X 4040-M A X 4044 fam ily of m icro p o w e r op am ps o p e ra te s from a s in g le + 2 .4 V to + 5 .5 V s u p p ly o r du a l
|
OCR Scan
|
PDF
|
MAX4041/MAX4043)
200pF
90kHz
MAX4040-MAX4044
4040-M
4044 SOT23-8
|
sot59
Abstract: No abstract text available
Text: Philips Sem iconductors Small-signal Transistors General M O U NTIN G AND SOLDERING Screen printing M ounting m ethods This is the best high-volum e production m ethod of solder paste application. An em ulsion-coated, fine mesh screen with apertures etched in the emulsion to coincide with the
|
OCR Scan
|
PDF
|
OT323.
OT223.
sot59
|
MARKING 43 SOT23 REGULATOR
Abstract: MARKING ZE SOT-23 TVS in SOT-23 marking 8A sot-23 8k sot 23 marking 8Y SOT23 8J SOT23 8C SOT-23 8c SOT 23 marking 46 sot-23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBZ5221BLT1 SERIES 225 mW SOT-23 Zener Voltage Regulator Diodes 225 mW SOT-23 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes u Manufacturing Locations: 3 1 Cathode Anode WAFER FAB: Phoenix, Arizona
|
OCR Scan
|
PDF
|
OT-23
MMBZ5221BLT1
OT-23
MARKING 43 SOT23 REGULATOR
MARKING ZE SOT-23
TVS in SOT-23
marking 8A sot-23
8k sot 23 marking
8Y SOT23
8J SOT23
8C SOT-23
8c SOT 23
marking 46 sot-23
|
Untitled
Abstract: No abstract text available
Text: Order this data sheet by MMBZ15VDLT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15 Volt SOT-23 Bipolar Zener Overvoltage Transient Suppressor This monolithic silicon zener device is designed for applications requiring transient overvol tage protection capability. It is intended for use in voltage and ESD sensitive equipm ent such as
|
OCR Scan
|
PDF
|
MMBZ15VDLT1/D
OT-23
|
BSN20 MARKING
Abstract: BSN20
Text: G en era l \J S e m i c o n d u c t o r _ BSN20 N-Channel Enhancement-Mode MOSFET % Vds 5 0 V RdS ON 6 f i Id 1 8 0 m A TO-236AB (SOT-23) •122(3.1) .110(2.8) 0.031 (0.8) .016 (0.4) T o p V ie w R+ 1— co m 0 035 (0.9) CO in m o o Pin Configuration
|
OCR Scan
|
PDF
|
BSN20
O-236AB
OT-23)
OT-23
OT-23,
S0T-23-6L
BSN20 MARKING
BSN20
|
AS433
Abstract: LT1431 2F SOT23
Text: SEMICONDUCTOR Excellence in Analog Power Products AS433/AS433L U ltra 2.5V Precision A djustable Shunt Regulator 150mA/100mA FEATURES APPLICATIONS • • • • • • • • • • • • • • • Trim m ed Bandgap up to 0.2% W ide O perating C u rre n t. 1mA to 150/100mA
|
OCR Scan
|
PDF
|
AS433/AS433L
150mA/100mA
150/100mA
OT-89,
OT-23
AS433L)
LT1431
AS433/433L
OT-23-3L
AS433
LT1431
2F SOT23
|
SOT-23 Product Code bss123
Abstract: DSS SOT23 marking 9a sot-23
Text: ^ B S S 1 23 Supertex ine. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdgs R dS ON (max) îf b v dss/ 100V 6£2 0.5A Product marking for SOT-23: Order Number / Package SOT-23 SA* BSS123 where * = 2-week alpha date code
|
OCR Scan
|
PDF
|
OT-23
BSS123
OT-23:
SOT-23 Product Code bss123
DSS SOT23
marking 9a sot-23
|
yna sot23
Abstract: BAS21 SOD323 diode ep sod-323 BAV21ws E8
Text: v G eneral S e m ic o n d u c t o r BAS19thru BAS21 % Small Signal Diodes Features • Silicon Epitaxial Planar Diode TO-236AB SOT-23 • Fast switching diode in case SOT-23, especially suited for automatic insertion. •These diodes are also available in other case
|
OCR Scan
|
PDF
|
BAS19thru
BAS21
OT-23,
OD-123
BAV19W
BAV21W,
BAV101
BAV103,
DO-35
BAV19
yna sot23
BAS21 SOD323
diode ep sod-323
BAV21ws E8
|
