Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SOT23 MARKING JS V Search Results

    SOT23 MARKING JS V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    SOT23 MARKING JS V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Js SMD MARKING CODE SOT23

    Abstract: DIODE JS4 smd code marking js Js MARKING CODE SOT23 smd diode JS smd JS marking code js "MARKING CODE JS" JS3 SOT23 Diode marking CODE JS
    Text: BAS21 / A / C / S 225mW SMD Switching Diode Small Signal Diode SOT-23 A Features F B E —Fast switching speed —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant


    Original
    BAS21 225mW OT-23 OT-23 MIL-STD-202, Js SMD MARKING CODE SOT23 DIODE JS4 smd code marking js Js MARKING CODE SOT23 smd diode JS smd JS marking code js "MARKING CODE JS" JS3 SOT23 Diode marking CODE JS PDF

    SOT 363 marking CODE a7

    Abstract: MARKING D6 SOT363
    Text: TM Micro Commercial Components SWITCHING DIODES MCC Part Number Peak Reverse Voltage PRV V Maximum Reverse Current @ 25°C Maximum Forward Voltage Drop Current IR @ VR mA VF @ IF V V Junction Capacitance VR =4.0V, f=1MHz Reverse Recovery Time Maximum Power


    Original
    400mW 500mW 1N4148 1N4448 1N914 1N914A 1N914B DO-35 SOT 363 marking CODE a7 MARKING D6 SOT363 PDF

    MARKING JS

    Abstract: DIODE JS4 BAS21SLT1 BAS21CLT1 sot23 js marking DIODE JS DIODE JS 4 BAS21ALT1 BAS21LT1 Diode SOT-23 marking Js
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/SLT1 SOT-23 SWITCHING DIODE FEATURES 1. 0 Power dissipation mW Tamb=25℃ 0. 95 0. 4 2. 9 Forward Current 200 m A IF: Reverse Voltage 250 V VR: Operating and storage junction temperature range


    Original
    OT-23 BAS21/A/C/SLT1 OT-23 BAS21LT1 BAS21ALT1 BAS21CLT1 BAS21SLT1 MARKING JS DIODE JS4 BAS21SLT1 BAS21CLT1 sot23 js marking DIODE JS DIODE JS 4 BAS21ALT1 BAS21LT1 Diode SOT-23 marking Js PDF

    Untitled

    Abstract: No abstract text available
    Text: PJSLC05 SERIES ULTRA LOW CAPACITANCE SINGLE TVS FOR HIGH SPEED DATA LINES This Transient Voltage Suppressor is intended to Protect Sensitive Equipment against Electrostatic Discharge and Transient Events as well to offer a Miminum insertion loss in high speed data communication transmission line ports used in Portable Consumer,Computing


    Original
    PJSLC05 IEC61000-4-2 IEC61000-4-5 OT-23, PDF

    DIODE JS4

    Abstract: bas21 js Diode SOT-23 marking Js BAS21 BAS21A BAS21C BAS21S MARKING JS sot-23 sot23 marking tj DIODE JS.3
    Text: BAS21/A/C/S Surface Mount Switching Diodes SWITCHING DIODE P b Lead Pb -Free 200m AMPERES 250 VOLTS Features: *Fast Switching Speed *Surface Mount Package Ideally Suited for Automatic Insertion *High Conductance *For General Purpose Switching Applications


    Original
    BAS21/A/C/S OT-23 OT-23, MIL-STD-202, OT-23 100mA 200mA BAS21 BAS21A BAS21C DIODE JS4 bas21 js Diode SOT-23 marking Js BAS21 BAS21A BAS21C BAS21S MARKING JS sot-23 sot23 marking tj DIODE JS.3 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/SLT1 SOT—23 SWITCHING DIODE FEATURES BAS21LT1 Marking: JS BAS21ALT1 Marking: JS2 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage


    Original
    OT-23 BAS21/A/C/SLT1 BAS21LT1 BAS21ALT1 BAS21CLT1 037TPY 950TPY 550REF 022REF PDF

    bas21 equivalent diode

    Abstract: bas21 SOT23 MARKING SB a1 sot-23 diode js marking js BAS21S
    Text: BAS21, BAS21A/C/S SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 250 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOT-23 • Fast Switching Speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-23 Dim.


    Original
    BAS21, BAS21A/C/S OT-23 OT-23 J-STD-020D 2002/95/EC 100uA 100mA 200mA bas21 equivalent diode bas21 SOT23 MARKING SB a1 sot-23 diode js marking js BAS21S PDF

    BAS21

    Abstract: Diode SOT-23 marking Js bas21 equivalent diode
    Text: BAS21, BAS21A/C/S SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 250 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOT-23 • Fast Switching Speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-23 Dim.


    Original
    BAS21, BAS21A/C/S OT-23 OT-23 J-STD-020D 2002/95/EC 100uA 100mA 200mA BAS21 Diode SOT-23 marking Js bas21 equivalent diode PDF

    ch340s

    Abstract: MARKING JW SOT-23 marking 3U 3T 3C diode 3E 3G BAT54BDWD1PT BA5 marking BA6 marking transistor marking lv4 ch740h40 kl3 59 MF sot-23
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Maximum Maximum Maximum Maximum Reverse Peak Average Forward Peak Current Reverse Rectified Surge Current Marking @ 25°C TA Voltage Current @ 1S IO IFM Surge IR


    Original
    CH025S-40PT CH43H-30PT CH035H-20PT CH035H-30PT CH035H-40PT CH015H-40PT CH015H-50PT CH015H-60PT CH157H-70PT BAT43BPT ch340s MARKING JW SOT-23 marking 3U 3T 3C diode 3E 3G BAT54BDWD1PT BA5 marking BA6 marking transistor marking lv4 ch740h40 kl3 59 MF sot-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Zowie Technology Corporation High Voltage Switching Diode Lead free product Halogen-free type FETURE • We declare that the material of product compliance with RoHS requirements. 3 BAS21GH 1 ANODE 3 CATHODE 1 2 SOT-23 TO-236AB MAXIMUM RATINGS Symbol Value


    Original
    BAS21GH OT-23 O-236AB) PDF

    BAS21C

    Abstract: J-STD-020D BAS21 BAS21A BAS21S MarKING JS
    Text: BAS21, BAS21A/C/S SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 250 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOT-23 • Fast Switching Speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-23 Dim.


    Original
    BAS21, BAS21A/C/S OT-23 OT-23 J-STD-020D 2002/95/EC BAS21C J-STD-020D BAS21 BAS21A BAS21S MarKING JS PDF

    marking code 604 SOT23

    Abstract: NPN transistors sot-23 26 Q62702-F1065 Q62702-F1066 Q62702-F976 Q62702-F977 IC ua 74
    Text: NPN Silicon High-Voltage Transistors BFN 24 BFN 26 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 25, BFN 27 PNP ● Type Marking


    Original
    Q62702-F1065 Q62702-F976 OT-23 marking code 604 SOT23 NPN transistors sot-23 26 Q62702-F1065 Q62702-F1066 Q62702-F976 Q62702-F977 IC ua 74 PDF

    JS SOT23-3

    Abstract: sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23
    Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT-23 3 CATHODE 1 ANODE SC-88A


    Original
    BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19LT1 BAS20LT1 BAS21LT1 OT-23 SC-88A JS SOT23-3 sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Mechanical Dimensions BAS21 1. 0 Description 0. 4 0. 95 2. 9 1. 9 2. 4 1. 3 0. 95 SOT-23 Dimmension in mm FEATURES: Power dissipation Pd=225mW Ta=25C Forward Current Forward Current I F=200 m A Reverse Voltage(Vr) = 250V Operating and storage junction temperature range


    Original
    BAS21 OT-23 225mW BAS21A BAS21C BAS21S 100mA 200mAmmension PDF

    ic 817

    Abstract: C1740 Q62702-C1740 6CS marking code sot 23 C1505 B 817 5Bs sot-23 c1740 npn marking code 5cs BC 817 25 NPN
    Text: PNP Silicon AF Transistors ● ● ● ● ● BC 807 BC 808 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code Pin Configuration


    Original
    Q62702-C1735 Q62702-C1689 Q62702-C1721 Q62702-C1736 Q62702-C1504 Q62702-C1692 OT-23 ic 817 C1740 Q62702-C1740 6CS marking code sot 23 C1505 B 817 5Bs sot-23 c1740 npn marking code 5cs BC 817 25 NPN PDF

    DIODE JS4

    Abstract: JS3 SOT23 js41 BAS21 BAS21A BAS21C BAS21S
    Text: BAS21 Series Surface Mount Switching Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES • · · A L High Voltage Switching Diode For General Purpose Switching Applications Surface Mount Package Ideally Suited for


    Original
    BAS21 OT-23, MIL-STD-202, OT-23 01-Jun-2002 DIODE JS4 JS3 SOT23 js41 BAS21A BAS21C BAS21S PDF

    Untitled

    Abstract: No abstract text available
    Text: ఎਈऔ૵਌! Switching Diode FHDS21 Switching Diode ఎਈऔ૵਌ DESCRIPTION & FEATURES 概述及特點 Low forward voltage 低正向壓降 High Reverse Voltage 高反向電壓 Switching Application開關應用 PIN ASSIGNMENT 引腳說明 PIN NAME PIN NUMBER 引腳序號


    Original
    OT-23 FHDS21 OT-23 FHDS21 100mAdc 200mAdc 200Vdc PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FEATURE • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS21LT1G JS 3000/Tape&Reel LBAS21LT3G


    Original
    LBAS21LT1G 3000/Tape LBAS21LT3G 10000/Tape OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FETURE • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS21LT1G JS 3000/Tape&Reel LBAS21LT3G


    Original
    LBAS21LT1G 3000/Tape LBAS21LT3G 10000/Tape 236AB) OT-23 PDF

    BAS40

    Abstract: No abstract text available
    Text: BAS40/ -04/ -05/ -06 VISHAY SURFACE MOUNT SCHO TTKY BARRIER DIODES /Li T E M I ri / POWERSEMICONDUCTOR I Features Low Turn-on Voltage Fast switching PN Junction Guard Ring for Transient and ESD Protection SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50


    OCR Scan
    BAS40/ OT-23, MIL-STD-202, OT-23 300ns, DS11006 BAS40 PDF

    sot23 transistor marking y2

    Abstract: BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB
    Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Zener Diodes Pinout 1-Anode, 2-N.C., 3-Cathode (Tolerance ± 5%) VZ (Norn) Volts U.S. Standards Device Marking 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0


    OCR Scan
    OT-23 OT-23 MMBZ5226 MMBZ5227 MMBZ5228 MMBZ5229 BZX84C4V3 MMBZ5230 BZX84C4V7 MMBZ5231 sot23 transistor marking y2 BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB PDF

    GL24

    Abstract: marking code L05 SOT 23
    Text: v G en e r a l S e m ic o n d u c t o r % GL05 thru GL24 Low Capacitance TVS Diode For High-Speed Data Interfaces TO-236AB SOT-23 Stand-off Voltage 5 to 24V Peak Pulse Power (8/20[js) 300W i •1 22 (3 .1) .110 2.8 Mounting Pad Layout .016(0.4) _ Ë Top View


    OCR Scan
    O-236AB OT-23) OT-23 E8-10K 8/20ns 8/20ps GL24 marking code L05 SOT 23 PDF

    2n 5088 transistor

    Abstract: NPN transistor 500ma TO-92 2n5088 transistor MMBT5088 transistor TO-92 mil-std c 5088 2N5088 2N5089 MMBT5089 432 sot23
    Text: 2 N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR Features MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier SOT-23 -H.h-A TOF* VIEW • &


    OCR Scan
    N5088/89 MMBT5088/89 MMBT5088 MMBT5089 O-92/SOT-23, MIL-STD-202, OT-23 MMBT5089 2n 5088 transistor NPN transistor 500ma TO-92 2n5088 transistor transistor TO-92 mil-std c 5088 2N5088 2N5089 432 sot23 PDF

    BS817

    Abstract: MARKING S17 TRANSISTOR SOT-23 marking JE "marking s17"
    Text: BS817 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 - H . h - A TOR VIEW T B C Mechanical Data Case: SOT-23, Plastic


    OCR Scan
    BS817 OT-23, MIL-STD-202, DS11401 BS817 MARKING S17 TRANSISTOR SOT-23 marking JE "marking s17" PDF