Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23
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FMMT491Q
J-STD-020
MIL-STD-202,
DS37009
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23
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FMMT591Q
J-STD-020
DS37010
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BF545A_BF545B_BF545C
Abstract: BF545B
Text: 3 SO T2 BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
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BF545A;
BF545B;
BF545C
BF545A)
BF545A
BF545A_BF545B_BF545C
BF545B
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Untitled
Abstract: No abstract text available
Text: 3 SO T2 BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
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BF556A;
BF556B;
BF556C
BF556A
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Untitled
Abstract: No abstract text available
Text: 3 SO T2 BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
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BF545A;
BF545B;
BF545C
BF545A)
BF545A
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BF556A_BF556B_BF556C
Abstract: No abstract text available
Text: 3 SO T2 BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
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BF556A;
BF556B;
BF556C
BF556A
BF556A_BF556B_BF556C
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features and benefits High-speed switching
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PMBFJ108;
PMBFJ109;
PMBFJ110
PMBFJ108)
sym053
PMBFJ108
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bf862
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 NXP Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition frequency for excellent sensitivity in
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M3D088
BF862
MAM036
R77/03/pp11
bf862
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BF862
Abstract: marking code 2Ap transistor 2Ap nxp marking code MCD809 MCD815 10102F fet bf862 nxp 102 MCD814
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 NXP Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition frequency for excellent sensitivity in
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M3D088
BF862
MAM036
R77/03/pp11
BF862
marking code 2Ap
transistor 2Ap
nxp marking code
MCD809
MCD815
10102F
fet bf862
nxp 102
MCD814
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PMBFJ111
Abstract: No abstract text available
Text: SO T2 3 PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features and benefits High-speed switching
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PMBFJ111;
PMBFJ112;
PMBFJ113
PMBFJ111)
sym053
PMBFJ111
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BF861A_BF861B_BF861C
Abstract: No abstract text available
Text: SO T2 3 BF861A; BF861B; BF861C N-channel junction FETs Rev. 5 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical junction field effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against
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BF861A;
BF861B;
BF861C
MSC895
BF861A
BF861B
BF861C
BF861A_BF861B_BF861C
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bf861 application
Abstract: No abstract text available
Text: SO T2 3 BF861A; BF861B; BF861C N-channel junction FETs Rev. 5 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical junction field effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against
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BF861A;
BF861B;
BF861C
MSC895
BF861A
bf861 application
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FMMT634Q
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features
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FMMT634Q
900mA
625mW
FMMT734Q
AEC-Q101
DS37051
FMMT634Q
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT459Q 500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Feature
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FMMT459Q
150mA
500mA
625mW
-90mV
120mA
AEC-Q101
DS37019
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pmbfj310
Abstract: No abstract text available
Text: 3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION
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PMBFJ308;
PMBFJ309;
PMBFJ310
PMBFJ308
pmbfj310
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top marking c2 sot23-5
Abstract: Marking C2 SOT23-5 part marking Ht1 q2 marking sot23-5 v32 sot23-5 MC78LC50HT1G marking aaaa sot23-3 Marking 305 SOT23-5 top marking c1 sot23-5 MC78LC50HT1
Text: MC78LC00 Series Micropower Voltage Regulator Features THIN SOT23−5 NTR SUFFIX CASE 483 5 Low Quiescent Current of 1.1 mA Typical Excellent Line and Load Regulation Maximum Operating Voltage of 12 V Low Output Voltage Option High Accuracy Output Voltage of 2.5%
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MC78LC00
OT23-5
OT-89,
OT23-5
top marking c2 sot23-5
Marking C2 SOT23-5
part marking Ht1
q2 marking sot23-5
v32 sot23-5
MC78LC50HT1G
marking aaaa sot23-3
Marking 305 SOT23-5
top marking c1 sot23-5
MC78LC50HT1
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SOT23-5 marking 016
Abstract: Marking 305 SOT23-5 MC78LC00 MC78LC00NTR MC78LC30HT1 MC78LC30NTR MJD32C LAL sot23-5 MARKING V32 SOT23
Text: MC78LC00 Series Micropower Voltage Regulator Features MARKING DIAGRAMS AND PIN CONNECTIONS THIN SOT23−5 NTR SUFFIX CASE 483 GND 1 Vin 2 Vout 3 5 Low Quiescent Current of 1.1 mA Typical Excellent Line and Load Regulation Maximum Operating Voltage of 12 V
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MC78LC00
OT23-5
OT-89,
OT-23,
OT-89
MC78LC00/D
SOT23-5 marking 016
Marking 305 SOT23-5
MC78LC00NTR
MC78LC30HT1
MC78LC30NTR
MJD32C
LAL sot23-5
MARKING V32 SOT23
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TOT - 4301
Abstract: SOT 23 marking code a6 diode A6 SOD-323 MARK MINI-MELF DIODE marking 3
Text: 1N4148W, 1N4148WS SMALL SIGNAL DIODES .022 0.55 SOD-123 (1N4148W) .112 (2.85) .100 (2.55) ¨ This diode is also available in other case styles including: the DO-35 case with the type designation 1N4148, the Mini-MELF case with the type designation LL4148, and
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1N4148W,
1N4148WS
OD-123
1N4148W)
DO-35
1N4148,
LL4148,
OT-23
IMBD4148.
1N4148W
TOT - 4301
SOT 23 marking code a6 diode
A6 SOD-323 MARK
MINI-MELF DIODE marking 3
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sot23-5 Marking
Abstract: MC78LC30HT1G top marking c2 sot23 MC78LC00 MC78LC00NTR MC78LC30HT1 MC78LC30NTR MJD32C q2 marking sot23-5 MC78LC18
Text: MC78LC00 Series Micropower Voltage Regulator Features MARKING DIAGRAMS AND PIN CONNECTIONS THIN SOT23−5 NTR SUFFIX CASE 483 Gnd 1 Vin 2 Vout 3 5 N/C 5 Low Quiescent Current of 1.1 mA Typical Excellent Line and Load Regulation Maximum Operating Voltage of 12 V
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MC78LC00
OT23-5
OT-89,
OT-23,
OT-89
MC78LC00/D
sot23-5 Marking
MC78LC30HT1G
top marking c2 sot23
MC78LC00NTR
MC78LC30HT1
MC78LC30NTR
MJD32C
q2 marking sot23-5
MC78LC18
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Untitled
Abstract: No abstract text available
Text: BAS70 / -04 / -05 / -06 Taiwan Semiconductor Small Signal Product 225mW SMD Switching Diode FEATURES - Low turn-on voltage - Fast switching - PN junction guard ring for transient and ESD protection MECHANICAL DATA SOT-23 - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free,
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BAS70
225mW
OT-23
MIL-STD-202,
260oC/10s
008grams
BAS70
S1404012
BAS70-04
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k75 06 49
Abstract: MARKING CODE 13 SOT23 On semiconductor date Code sot-23 BAS70-7 Marking k7f RMS-49 sot-23 marking code BAS70 BAS70-04 BAS70-05
Text: BAS70/ -04/ -05/ -06 SURFACE MOUNT SCHOTTKY BARRIER DIODE SPICE MODEL: BAS70 NEW PRODUCT Features • · · Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection SOT-23 A B Mechanical Data · · · · · · · · Case: SOT-23, Molded Plastic
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BAS70/
BAS70
OT-23
OT-23,
J-STD-020A
MIL-STD-202,
BAS70-06-7
3000/Tape
com/datasheets/ap02007
k75 06 49
MARKING CODE 13 SOT23
On semiconductor date Code sot-23
BAS70-7
Marking k7f
RMS-49
sot-23 marking code
BAS70
BAS70-04
BAS70-05
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sot-23 marking 213
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBTH24LT1/D SEMICONDUCTOR TECHNICAL DATA M M BTH24LT1 VH F M ixer Transistor NPN Silicon • Motorola Preferred Device COLLECTOR 3 Designed for • f j = 400 MHz Min @ 8 mA EMITTER CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS
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MMBTH24LT1/D
BTH24LT1
OT-23
O-236AB)
MMBTH24LT1
sot-23 marking 213
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBD7000LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode M M BD7000LT1 Motorola Preferred Device 1 ° ANODE N ? i N ° 2 CATHODE CATHODE/ANODE MAXIMUM RATINGS EACH DIODE Symbol Bating Reverse Voltage CASE 318-08, STYLE 11
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MMBD7000LT1/D
BD7000LT1
OT-23
O-236AB)
1-80CM41-2447
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SOT-23 marking SW
Abstract: No abstract text available
Text: MOTOROlLA Order this document by m m bd 283slti/d SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Sw itching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE ANODE 3 % -N — ° 1 N ° 2 CATHODE 2 CASE 3 1 8-08, STYLE 12 SOT-23 TO-236AB MAXIMUM RATINGS (EACH DIODE)
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283slti/d
MMBD2835LT1
MMBD2836LT1
OT-23
O-236AB)
MMBD2835LT1/D
SOT-23 marking SW
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