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    SOT23 HF Search Results

    SOT23 HF Result Highlights (1)

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    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    SOT23 HF Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FMMTA06 SOT23 NPN SILICON PLANARMEDIUM POWER TRANSISTORS SUMMARY V BR CEO > 80V IC(cont) = 500mA DESCRIPTION 80V medium pow er NPN transistor in a compact SOT23 package FEATURES SOT23 • 80V V CEO • Compact SOT23 package SYMBOL • HFE 50 @ IC = 100mA


    Original     		PDF FMMTA06 500mA 100mA

    marking 1G SOT23

    Abstract: base resistance for SOT23 FMMTA06TA 25 V 500mA TRANSISTOR SOT23 4446 NA MARKING SOT23 FMMTA06 transistor marking 44 sot23 FMMT-A06
    Text: FMMTA06 SOT23 NPN SILICON PLANARMEDIUM POWER TRANSISTORS SUMMARY V BR CEO > 80V IC(cont) = 500mA DESCRIPTION 80V medium power NPN transistor in a compact SOT23 package FEATURES SOT23 • 80V V CEO • Compact SOT23 package SYMBOL • HFE 50 @ IC = 100mA APPLICATIONS


    Original     		PDF FMMTA06 500mA 100mA marking 1G SOT23 base resistance for SOT23 FMMTA06TA 25 V 500mA TRANSISTOR SOT23 4446 NA MARKING SOT23 FMMTA06 transistor marking 44 sot23 FMMT-A06

    FMMT634

    Abstract: IC 1A datasheet darlington sot23 npn transistor Ic 1A datasheet transistor Ic 1A datasheet NPN FMMT734 DSA003701
    Text: “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A 5K minimum - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734


    Original     		PDF FMMT634 625mW FMMT734 100mA 100ms 100us FMMT634 IC 1A datasheet darlington sot23 npn transistor Ic 1A datasheet transistor Ic 1A datasheet NPN FMMT734 DSA003701

    Untitled

    Abstract: No abstract text available
    Text: “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A 5K minimum - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734


    Original     		PDF FMMT634 625mW FMMT734 100mA 100us

    complementary npn-pnp

    Abstract: dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748
    Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES


    Original     		PDF ZXTD4591E6 OT23-6 OT23-6 ZXTD4591E6TA complementary npn-pnp dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748

    Untitled

    Abstract: No abstract text available
    Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES


    Original     		PDF ZXTD4591E6 OT23-6 OT23-6 ZXTD459Fax:

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23


    Original     		PDF FMMT491Q J-STD-020 MIL-STD-202, DS37009

    Untitled

    Abstract: No abstract text available
    Text: TUNING VARACTOR SOT23 surface mount silicon abrupt tuning varactor SOT23 surface mount silicon abrupt tuning varactor Features Description • High quality factor • Low leakage current • Passivated silicon mesa technology • Surface mount package •


    Original     		PDF DH71000 DH71045-XX DH71067-XX DH71100-XX Cj0/Cj30 DH71067-XX DH71100-XX:

    BC847 SOT23

    Abstract: BC856BT SOT23 SOT323 SOT-323 BC850 SOT23 BC856BW BC846ASOT-23 BC856B SOT23 SOT23 BC846A
    Text: Philips Semiconductors Small-signal Transistors TYPE NUMBER PACKAGE Selection guide VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) 65 100 250 110 450 100 BC856 305 PNP COMPL. PAGE BC846 SOT23 BC846A SOT23 65 100 250 110 220 100 BC856A


    Original     		PDF BC856 BC846 BC846A BC856A BC846AT SC-75 BC856AT BC846AW OT323 BC856AW BC847 SOT23 BC856BT SOT23 SOT323 SOT-323 BC850 SOT23 BC856BW BC846ASOT-23 BC856B SOT23 SOT23 BC846A

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23


    Original     		PDF FMMT591Q J-STD-020 DS37010

    FMMTA20R

    Abstract: FMMTA20 FMMTA70 DSA003703 FMMTA20R-3C
    Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA20 ISSUE 2 – MARCH 1995 PARTMARKING DETAIL – COMPLEMENTARY TYPE – FMMTA20 – 1C FMMTA20R – 3C E C FMMTA70 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO


    Original     		PDF FMMTA20 FMMTA20R FMMTA70 100mA, 100MHz 140kHz, FMMTA20R FMMTA20 FMMTA70 DSA003703 FMMTA20R-3C

    MMBT5401

    Abstract: No abstract text available
    Text: MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data •   Epitaxial Planar Die Construction Complementary NPN Type - MMBT5551 Ideal for Low Power Amplification and Switching  Case: SOT23  Case material: molded plastic, “Green” molding compound


    Original     		PDF MMBT5401 MMBT5551 J-STD-020 AEC-Q101 MIL-STD-202, DS30057 MMBT5401

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - MARCH 2001 FMMTA92 ✪ PARTMARKING DETAILS: – FMMTA92 - 4E – FMMTA92R - 8E E C B COMPLEMENTARY TYPES: – FMMTA92 - FMMTA42 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF FMMTA92 FMMTA92 FMMTA92R FMMTA42 -10mA, -30mA

    FMMTA42

    Abstract: FMMTA92 FMMTA92R pnp 200v fmmt-a
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - MARCH 2001 FMMTA92 ✪ PARTMARKING DETAILS: – FMMTA92 - 4E – FMMTA92R - 8E E C B COMPLEMENTARY TYPES: – FMMTA92 - FMMTA42 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF FMMTA92 FMMTA92 FMMTA92R FMMTA42 -10mA, -30mA FMMTA42 pnp 200v fmmt-a

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Featrues L2SA1037AKXLT1G z Pb-Free Package is Available. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKXLT1G SOT23 3000/Tape & Reel L2SA1037AKXLT1G SOT23 10000/Tape & Reel 2 SOT– 23


    Original     		PDF L2SA1037AKXLT1G 3000/Tape 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO


    Original     		PDF FMMT458 FMMT558 100ms

    FMMT593

    Abstract: FMMT493
    Text: SOT23 NPN SILICON PIANAR MEDIUM FMMT493 POWER TRANSISTOR ISSUE 3- NOVEMBER COMPLEMENTARY PARTMARKING 1995 TYPE - E 1 1 493 I RATINGS. I SYMBOL ] PARAMETER Collector-Base ! FMMT593 DETAIL - ABSOLUTE MAXIMUM I SOT23 VALUE 1 UNIT Voltage Collector-Emitter Voltage


    Original     		PDF FMMT493 FMMT593 TamW250C 100MHz 10IMA 10tnA 10JmA 100mA 10IIA FMMT593 FMMT493

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated BCW66H 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 45V  Case: SOT23  IC = 800mA High Continuous Collector Current  Case Material: molded plastic, “Green” molding compound


    Original     		PDF BCW66H 800mA 300mV 100mA BCW68H J-STD-020 AEC-Q101 DS33003

    K1M 103

    Abstract: AECQ-101 AECQ101 k1R diodes bc847c K1R SOT23 20/capacitor K1M 103
    Text: BC846A-BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT23  Complementary PNP Types Available BC856 – BC858  Case material: molded plastic, “Green” molding compound


    Original     		PDF BC846A-BC848C BC856 BC858) AEC-Q101 J-STD-020 MIL-STD-202, BC846A BC848C DS11108 K1M 103 AECQ-101 AECQ101 k1R diodes bc847c K1R SOT23 20/capacitor K1M 103

    MV SOT23

    Abstract: PARTMARKING at FMMT5209 FMMT5210 DSA003697
    Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 - JULY 1995 FMMT5209 FMMT5210 ✪ PARTMARKING DETAILS: FMMT5209 - 2Q FMMT5210 - 2R E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage Emitter-Base Voltage


    Original     		PDF FMMT5209 FMMT5210 FMMT5209 FMMT5210 20MHz 15KHz MV SOT23 PARTMARKING at DSA003697

    k3b transistor

    Abstract: BC858C
    Text: BC856A-BC858C PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT23  Complementary NPN Types Available BC846 – BC848  Case material: molded plastic, “Green” molding compound


    Original     		PDF BC856A-BC858C BC846 BC848) AEC-Q101 J-STD-020 MIL-STD-202, BC856A BC858C DS112072 k3b transistor BC858C

    MV SOT23

    Abstract: BCX18 BCX17 BCX18R t4 sot23 diode BCX17R BCX19 BCX20 DSA003674
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS BCX17 BCX18 ISSUE 3 – FEBRUARY 1996 PARTMARKING DETAILS – BCX17 BCX18 BCX17R BCX18R – T1 – T2 – T4 – T5 E C B COMPLEMENTARY TYPES - BCX17 - BCX19 BCX18 - BCX20 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER


    Original     		PDF BCX17 BCX18 BCX17R BCX18R BCX17 BCX19 BCX18 BCX20 MV SOT23 BCX18R t4 sot23 diode BCX17R BCX19 BCX20 DSA003674

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 FMMT493 O_ COMPLEMENTARY TYPE- FMMT593 PARTMARKING DETAIL- 493 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage SYMBOL VALUE UNIT


    OCR Scan     		PDF FMMT493 FMMT593 250mA, 500mA, 100MHz width-300us. 100mA

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE FMMT497 HIGH PERFORMANCE TRANSISTOR ISSUE 3 - DECEMBER 1995 O COMPLIMENTARY T Y P E - FMMT597 PARTMARKING D ETAIL- 497 I- SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage


    OCR Scan     		PDF FMMT497 FMMT597 100MHz 100mA